Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (2)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Properties of TiO〈sub〉2〈/sub〉Films Prepared by the Spray Pyrolysis Method (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 99-100 (July 2004), p. 259-264 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: TiO2 thin films were prepared by spray pyrolysis method. The solution containingtitanium(IV)isopropoxide, acetylacetone and ethanol was deposited onto n-type Si(100) and HD Si(100) wafers at substrate temperatures of 315 to 500 0C by pulsed spray solution feed. The films were characterized by FTIR, XRD, AFM, ellipsometry, impedance and I-V measurements. Asdeposited films prepared below 500 0C were amorphous, whereas crystalline films could be achieved at 500 0C. Subsequent annealing at 700 °C in air led to crystalline anatase formation for films deposited below 400 °C. Rutile phase appears in annealed films prepared at a growth temperature above 400 °C. Anatase TiO2 films show refractive index in the range 2.20 to 2.40 and exhibit a relative dielectric constant value of 75 in the range 1 to 100 kHz. Electric breakdown occurs for 120 nm thick film at 250 kV/cm
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.99-100.259.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Nature of the native deep localized defect recombination centers in the chalcopyrite and orthorhombic AgInS2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 205-209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the deep photoluminescence (PL) emission in polycrystalline chalcopyrite and orthorhombic AgInS2. In both phases several PL bands were detected at 8 K. On the energy scale these deep PL bands are positioned according to a regular pattern. This is explained as being due to electron-hole recombination within very close deep donor-deep acceptor pairs, with different distances between donor and acceptor defects. The deep donor defect is an interstitial silver Agi and the native deep acceptor defect appears to be situated at the Ag or In place. The two different crystal modifications also cause slightly different distances between donor and acceptor defects in the AgInS2 lattice and, as a result of this, different spectral positions of the deep PL bands. It is shown that these deep localized donor–acceptor pairs can be reasonably efficient radiative recombination centers up to distances of 5.3 Å between the deep donor and the deep acceptor and, thus, up to six distinct deep PL bands are visible in AgInS2. The deep donor-deep acceptor pair model is confirmed also by the temperature quenching experiments and by the excitation power dependences. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373644
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...