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  • 2000-2004  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 844-846 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that electrochemical capacitance–voltage profiling can be used to determine the free hole concentration in heavily p-type doped low-temperature-grown GaAs films. This provides a simple and reliable method for measuring the hole concentration in ferromagnetic Ga1−xMnxAs semiconductor alloys. The method overcomes the complications that arise from the anomalous Hall effect term which affects standard transport studies of carrier concentration in conducting ferromagnetic materials. Specifically, we find that the maximum Curie temperature of about 111 K found for our Ga0.91Mn0.09As samples corresponds to a hole concentration of 1021 cm−3. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496143
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  • 3
    Electronic Resource
    Electronic Resource
    Large disparity between gallium and antimony self-diffusion in gallium antimonide (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 408 (2000), S. 69-72 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice (‘self-’) atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35040526
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390487
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  • 5
    Electronic Resource
    Electronic Resource
    Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large increase in the electrical activation of sulfur coimplanted with nitrogen in GaAs is observed within a thin (〈500 Å) near-surface region. A free electron concentration as high as 1.5×1019 cm−3 is observed in this layer, which is a factor of 5 higher than in a GaAs sample implanted with S only. The high free electron concentration in this thin layer is the result of the incorporation of N on the As site which forms a thin dilute GaNxAs1−x alloy layer. The increased electrical activity of S in this layer is explained by the N-induced modifications of the conduction band as predicted by the band anticrossing model. The measured free electron concentration is consistent with a GaNxAs1−x alloy layer with x∼0.3%. The results have important practical implications on the fabrication of low-resistance, nonalloyed ohmic contacts to n-type GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328766
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  • 6
    Electronic Resource
    Electronic Resource
    Nature of the fundamental band gap in GaNxP1−x alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3251-3253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of GaNxP1−x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1−x at energy below the indirect ΓV–XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaNxP1−x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126597
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  • 7
    Electronic Resource
    Electronic Resource
    Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1571-1573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly mismatched group II-Ox–VI1−x alloys have been synthesized by oxygen implantation into Cd1−yMnyTe crystals. In crystals with y〉0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II–VI alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455689
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of InNxP1−x thin films by N ion implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dilute InNxP1−x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III–NxV1−x alloys. The InNxP1−x layers were thermally stable up to an annealing temperature of 850 °C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1−x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350963
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1−x (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2858-2860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1−x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of 〉6×1018 cm−3 for implanted S concentration higher than 1019 cm−3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320872
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