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  • 2000-2004  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1851-1854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1×1014 to 1×1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305909
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  • 2
    Electronic Resource
    Electronic Resource
    Electroluminescence mechanism in SiOx layers containing radiative centers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4078-4081 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide–semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current–voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452768
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic and structural properties of equiatomic Co–Pt alloy films at low temperature (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1775-1779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical properties of Co–Pt alloy films were investigated at low and room temperatures. We also investigated atomic and electronic structures of these films. The saturated polar Kerr rotation angles of CoPt and CoPt3 alloy films show different temperature dependence. Synchrotron-radiation photoemission spectroscopy was employed to confirm the correlation between the magneto-optical properties and the electronic structures of these films. Changes of a peak at 4.3 eV relevant to the Pt 5d levels hybridized with Co 3d electrons of the CoPt film and of the valence-band shape upon cooling have the same trend as that of the saturated Kerr rotation angle. A structural phase transition of the CoPt film from the tetragonal L10 to orthorhombic phase upon cooling is suggested by the theoretical calculations using linearized-muffin-tin-orbitals methods within the so-called "LDA+U" scheme as well as the experimental observations. X-ray diffraction patterns before and after cooling also support this structural phase transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372091
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  • 4
    Electronic Resource
    Electronic Resource
    Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3236-3242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7×1015 cm−2 prior to anneal at 1000 °C is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432114
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  • 5
    Electronic Resource
    Electronic Resource
    Modification of magnetic properties of epitaxial Co/Cu multilayers by 1 MeV C+ irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2036-2038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial [Co/Cu]10 grown on Si (001) has been irradiated by 1 MeV C+ with a dose of 1×1016/cm2. The intrinsic characteristics of epitaxy, such as crystal structure and fourfold magnetic anisotropy, are conserved after ion irradiation. However, the extrinsic magnetic properties are changed such that the coercivity decreases and the squareness of the hysteresis loop is noticeably improved. The intensity of the Cu (200) peak in the x-ray diffraction pattern increases about three times and its half-width decreases after irradiation. It is concluded that the changes of magnetic properties induced by ion irradiation result from the grain growth and the improved crystalline quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384483
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  • 6
    Electronic Resource
    Electronic Resource
    Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100) (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characteristics and the chemical state of a HfO2–Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and x-ray photoelectron spectroscopy. The structural stability is significantly enhanced up to 870 °C and so is able to sustain its amorphous and laminate structure. However, the laminate structure is drastically broken at the annealing temperature of 920 °C and the crystallization is locally generated. In particular, the formation of the interfacial layer during the postannealing treatment is effectively suppressed in the nanolaminated structure. The dielectric constant of the nanolaminate structure calculated from the accumulation capacitance increases from ∼10 to ∼17 as the annealing temperature increases. This change is closely related to the degree of the mixture composed by Al2O3 and HfO2. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1499223
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. The structural characteristics and chemical state of the HfO2 films in relation to the film thickness and postannealing temperature were examined by x-ray diffraction and x-ray photoelectron spectroscopy. An interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage. The structural characteristics of the HfO2 films are closely affected by the interfacial layer and are depended on the thickness of the films. The 45 Å thick HfO2 film with an amorphous structure was changed into a polycrystalline structure after rapid temperature annealing of 750 °C for 5 min, while thicker films were grown into a polycrystalline structure of monoclinic or tetragonal crystal structure. The silicate layer grown at the interfacial region is not stable even at 700 °C under ultrahigh vacuum condition and changes into the silicide layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487923
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and luminescence characteristics of thermally evaporated pentacene films on Si (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2872-2874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120 °C. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471929
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