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  • Artikel: DFG Deutsche Nationallizenzen  (32)
  • 1995-1999  (32)
  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 686-693 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≈100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2186-2191 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Audible acoustic wave generation during excimer laser interaction with materials has been investigated. It is found that the amplitudes of acoustic waves depend on laser fluence, pulse number, and substrate material characteristics and can be used to determine the nature of laser–material interactions. When laser fluence is below the ablation threshold of the materials, the amplitudes are reduced to zero at large pulse number due to the cleaning of contaminants on the substrate surface. As laser fluence becomes higher than the ablation threshold, the amplitudes of acoustic waves also reduce with increasing pulse number but to a constant level instead of zero due to laser ablation of substrate materials. Since the surface contamination can be completely removed by a few pulses at high laser fluence, the constant level is attributed to the material ablation. It is also found that the constant level increases with laser fluence. By establishing a relationship between the amplitudes and laser parameters, real-time monitoring of laser–solid interaction can be achieved. Fast Fourier transform analysis of the wave forms shows that there are several frequency components included in the acoustic waves with a peak around 10.9 kHz as the dominant one, which is related to laser material ablation. The monitoring of the acoustic wave emission can, therefore, be used to find the nature of laser–substrate interaction (i.e., surface cleaning or ablation), and to find the ablation threshold. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7647-7661 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication. © 1997 American Institute of Physics.
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6448-6451 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose and demonstrate a novel approach to the coating of semiconductor laser facets. In this approach, processed semiconductor lasers are cleaved in a high-vacuum system immediately followed by coating of the vacuum-exposed facet with a very thin Si layer (≤100 A(ring)) and a large band gap dielectric (Al2O3) layer. The Si layer is sufficiently thin to avoid the formation of quantized bound states in the Si. GaAs coated with thin Si and Al2O3 have a higher luminescence yield and a lower surface recombination velocity than bare GaAs surfaces as well as GaAs surfaces coated with Al2O3 only. A surface recombination velocity of 3×104 cm/s has been obtained using a modified dead layer model for the Si/Al2O3 sample. It is also shown that lasers which are cleaved in vacuum and subsequently coated with Si and Al2O3 have improved properties including an increased threshold for catastrophic optical damage. © 1996 American Institute of Physics.
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 499-504 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A quantitative investigation of laser-induced removal of particles from magnetic head slider surfaces has been carried out. The damage thresholds of magnetic head sliders for laser fluence and pulse number were found to be about 150 mJ/cm2 and 5000 pulses at 100 mJ/cm2, respectively. For laser fluence or pulse number above the damage threshold, laser irradiation onto magnetic head slider surfaces can cause microcracks around the pole tips. It is found that laser cleaning efficiency increases with increasing laser fluence and pulse number, but does not depend on repetition rate up to 30 Hz. Laser cleaning efficiency of removing particles from magnetic head slider surfaces can reach about 90% for Al particles and 100% for Sn particles, respectively, under appropriate conditions without causing damage. The mechanisms of laser cleaning of particles from magnetic head slider are laser-induced surface vibration, particle vibration, particle thermal expansion, and ablation with high laser fluence, which produce forces strong enough to detach particles from slider surfaces. Based on the above cleaning mechanisms, the dependence of laser cleaning efficiency on laser parameters can be explained. © 1996 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2812-2817 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A tiny metal probe was used to detect electric signals induced at the early stage of laser ablation in air. It is found that the electric signals result from probe ablation, plasma–probe interaction, and plasma-induced electric field. The recorded signals strongly depend on the probe positions. For a probe placed out of the plasma–probe interaction region, the detected electric signal is a negative peak in the nanosecond range, due to the plasma-induced electric field. The peak arrival time corresponds to the total amount of ion emission from the substrate surface, and therefore, does not vary with the probe position. The signal amplitude is inversely proportional to the square of the probe distance, consistent with the distance dependence of the field intensity from an electric dipole. The signal amplitude increases with the laser fluence while the peak arrival time reduces, reflecting the earlier plasma generation at a higher laser fluence. Both peak width and its arrival time of the electric signals increase with laser fluence and tend to saturate above 6.4 J/cm2. The electric signals were analyzed for laser ablation of different substrate materials. The electric signal detection was also applied to monitor the laser cleaning of organic contamination in real time. The mechanism of the electric signal generation and the process of electron and ion emission are briefly discussed. © 1999 American Institute of Physics.
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2899-2903 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Laser scattering and its interaction with plasma during KrF excimer laser ablation of silicon are investigated by ultrafast phototube detection. There are two peaks in an optical signal with the first peak attributed to laser scattering and the second one to plasma generation. For laser fluence above 5.8 J/cm2, the second peak rises earlier to overlap with the first one. The optical signal is fitted by a pulse distribution for the scattered laser light and a drifted Maxwell–Boltzmann distribution with a center-of-mass velocity for the plasma. Peak amplitude and its arrival time, full width at half maximum (FWHM), starting time, and termination time of the profiles are studied for different laser fluences and detection angles. Laser pulse is scattered from both the substrate and the plasma with the latter part as a dominant factor during the laser ablation. Peak amplitude of the scattered laser signal increases but its FWHM decreases with the laser fluence. Angular distribution of the peak amplitude can be fitted with cosn θ(n=4) while the detection angle has no obvious influence on the FWHM. In addition, FWHM and peak amplitude of plasma signal increase with the laser fluence. However, starting time and peak arrival time of plasma signal reduce with the laser fluence. The time interval between plasma starting and scattered laser pulse termination is proposed as a quantitative parameter to characterize laser plasma interaction. Threshold fluence for the interaction is estimated to be 3.5 J/cm2. For laser fluence above 12.6 J/cm2, the plasma and scattered laser pulse distributions tend to saturate. © 1999 American Institute of Physics.
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4403-4409 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Microstructures of 50 nm thick FePt magnetic thin films deposited on Pt buffer layers with various thicknesses (0–500 nm) grown on a Fe seeded MgO (100) substrate have been studied by transmission electron microscopy to correlate them with magnetic properties. High density of planar defects such as twin and antiphase boundary are present in the FePt films. The twins observed in these films are not the {011} twins which are commonly observed in the bulk FePt magnet, but they are the {111} twins. The density and morphology of these twins drastically change depending on the composition of the FePt thin films as well as the thickness of the Pt buffer layer, while that of the antiphase boundary does not show noticeable changes. In the Pt buffer layer, a high density of dislocations is present in order to reduce the elastic strain due to a large lattice mismatch imposed between the Pt layer and the MgO substrate (about 9%). When the thickness of the Pt buffer layer is increased to 500 nm, the Pt and FePt layers show a polycrystalline microstructure having a grain size ranging from 0.3 to 2.0 μm. The origin of the magnetic hardness is discussed based on these microstructural observation results. © 1998 American Institute of Physics.
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