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  • Articles: DFG German National Licenses  (100)
  • Electronic Resource  (100)
  • 1995-1999  (100)
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  • Articles: DFG German National Licenses  (100)
Material
  • Electronic Resource  (100)
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6991-6996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured photoluminescence (PL) spectra of deformed bulk Si-Ge alloys and found peculiar peak shifts of D1 and D2 lines depending on the deformation and annealing temperatures. Alloy crystals were grown by the Czochralski method. Specimens were deformed by compression at temperatures between 700 and 900 °C in an argon atmosphere. PL spectra were measured at 4.2 K. Peak positions of D1 and D2 lines depended on the deformation temperatures; they were at higher energies at higher deformation temperatures. On the other hand, those of D3 and D4 did not depend on the deformation temperature. The magnitudes of peak shifts of D1 and D2 lines were proportional to t2/3 at small t due to isothermal annealing ( t: the duration of annealing) at around 650 °C. The activation energy was determined to be 2.5 eV, which was much smaller than that of self-diffusion. These results were interpreted as being due to the change of alloy composition around dislocations caused by the elastic interaction between dislocations and constituent atoms, i.e., Si and Ge, in which process point defects generated during deformation were thought to play a crucial role. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9017-9021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of vacancy-type defects and displaced Si atoms in Si(100) caused by self-ion implantation has been investigated by variable-energy positron annihilation spectroscopy and Rutherford backscattering spectroscopy/channeling. It is found that the recovery process of the defects strongly depends on the morphology of the implanted region. The divacancies produced by an implantation of 2×1014Si+⋅cm−2, which is less than the critical value required for amorphization, aggregate into large vacancy clusters by annealing at 300 °C. These vacancy clusters diffuse towards the surface at temperatures above 600 °C and anneal out at around 800 °C. The specimen implanted with 2×1015Si+⋅cm−2, in which a complete amorphization takes place in the damaged region, shows a different annealing characteristic. In the first stage (∼600 °C), the amorphous zone is transformed into crystalline material by solid phase epitaxial growth, although large vacancy clusters still remain. These agglomerate clusters continue to grow in a second annealing stage which takes place at around 700 °C. Annealing at 900 °C is required to eliminate these vacancy-type defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5345-5347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the temperature dependence of the interlayer coupling, from 15 to 300 K, in ferromagnet/semiconductor/ferromagnet trilayers with the nominal structure of 10 nm δMn60Ga40/GaAs (n monolayers)/20 nm δMn54Ga46 [n=6–16 monolayers (ML) nominally] grown on (001) GaAs substrates by molecular-beam epitaxy. Since compositional analysis showed a strong diffusion of Mn into the GaAs spacer layer, we represent the trilayer structure as MnGa/(Ga,As,Mn)/MnGa. The magnetic-circular-dichroism loops showed antiferromagnetic coupling between both MnGa layers for the samples with a spacer layer from 6 to 14 ML GaAs nominally in the whole temperature range. The temperature coefficient of the coupling field was found to be positive for 6–8 ML spacers and negative for 10–14 ML spacers. We interpret these facts as the competition between two (or more) coupling mechanisms. For the sample with a 16 ML GaAs spacer layer, the interlayer coupling was antiferromagnetic below 200 K, but ferromagnetic above 200 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5168-5170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optical transitions between higher conduction subbands and higher heavy-hole subbands have been observed between 77 K and room temperature in photocurrent spectra of p-i-n photodiodes including 5-nm-wide InGaAs/InAlAs multi-quantum wells. The quadratic dependence of the transition energy on the heavy-hole quantum number, l=1,2 and 3, has been clarified for each conduction-electron quantum number, n=1 and 2. This experiment evidences the applicability of a particle-in-a-box model to the energy level determination. The carrier effective masses in InGaAs wells and the related band discontinuities were analyzed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3895-3901 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductive and photovoltaic responses in glassy Ag–As–S ion-conducting semiconductors have been studied. The ac conductivity of the glass increases with illumination, while the increase is ascribed to enhanced ionic conduction caused by temperature rise and to interfacial photoeffects. Bulk photocurrent is not detected. By contrast, photovoltages appear in Ag–As–S samples having sandwich and floating electrodes. The photovoltaic characteristics are discussed in terms of classical electrodynamics assuming interaction between electronic carriers and Ag+ ions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1034-1039 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical properties of Ag2S-As2S3 glassy alloys have been studied as a function of the Ag atomic concentration x. With an increase in x, the optical-absorption edge exhibits a red shift, while the steepness of the Urbach tail changes little. In the glasses with x≥15, the electrical conductivity is governed by Ag+ ionic conduction. The ionic conductivity exponentially increases with x, and in contrast the hole conductivity hardly changes with x; however, the activation energies for the ionic and the hole conductivity are nearly the same at about 0.4 eV for compositions with 15 ≤x≤35. These observations are discussed on the basis of atomic and electronic structures in Ag2S-As2S3 glasses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4071-4075 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum wells structures were studied by photocurrent spectroscopy. Photocurrent spectra showed clear steplike structures accentuated by exciton peaks. Many interband transitions were assigned from the spectral structure. As peaks of forbidden transitions, which appeared in large reverse bias voltages, were extrapolated to zero bias voltage on the photocurrent spectra, transition energies were estimated in a square potential well. New estimation methods of valence band parameters, heavy hole effective mass and valence band offset, were derived from a saturation of the heavy hole subband in the valence potential well, using the envelope function model in the effective mass approximation. The heavy hole effective mass in a direction normal to the quantum well plane and the valence band offset were 0.38m0 and 0.22 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have achieved long-pulse plasma heating using a negative-ion-based neutral beam injector (NBI) in the large helical device (LHD), where the confinement magnetic field is generated by only external superconducting coils. In the initial long-pulse experiments at lower power than that in short-pulse experiments, 80 keV–1.1 MW NBI heating lasted for 10 s with a little increase in the plasma density at the pulse end. Almost steady-state plasma heating was achieved for 21 s with 66 keV–0.6 MW NB injection. Plasma relaxation oscillation phenomena at a period of 1–2 s were also observed for 20 s. Above 1 keV plasma was easily sustained with a long-pulse NBI heating in LHD, without the current drive nor the disruption in tokamaks. Negative ion source operation was stable and the cooling water temperature rise of beam accelerator grids was nearly saturated with a temperature rise below 10 °C. For a higher power injection, the pulse duration is determined by the beam blocking, where the reionization loss is exponentially increased together with an increase in outgas in the injection port. The port conditioning by a careful repetition of injection is effective to the extension of the injection duration and the plasma maintenance duration. The initial long-pulse NBI heating at the reduced power has demonstrated an ability of steady-state operation in superconducting LHD. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A phase sensitive heterodyne polarimeter was installed on compact helical system (CHS). An HCN laser (337 μm) and Schottky barrier diodes are used for the radiation source and for detection, respectively. By using a phase sensitive heterodyne scheme, the Faraday rotation angle can be measured from the phase variations caused by the phase difference between the right- and left-handed waves in the magnetized plasma. The purpose of the polarimeter on CHS is for a stable density monitor which is free from fringe jump and for the measurements of the internal magnetic field induced by the plasma current. The present resolution of the Faraday rotation angle is 0.1° with 10 ms time resolution and 1° with 1 ms. These are mainly determined by the laser instability. © 1999 American Institute of Physics.
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  • 10
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance data of an undulator soft x-ray beamline based on the cylindrical element monochromator concept are described. Photon fluxes over 1012 photon/s 0.1% b.w. are achieved with the slit width of 100 μm at the harmonic peaks of a 13-period undulator. The maximum resolution obtained at the N K edge (E/ΔE) is ≈5000 with the slit width of 10 μm. The beamline is equipped with a multipurpose analytical instrument having a hemispherical electron analyzer and other detectors. The system is used for both x-ray photoelectron spectroscopy and x-ray absorption fine structure analyses for surface and materials science. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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