Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Digitale Medien  (7)
  • 1995-1999  (7)
Datenquelle
Materialart
  • Digitale Medien  (7)
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Calculation of hot electron distributions in silicon by means of an evolutionary algorithm (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5061-5066 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new approach to simulate electronic transport at high energies in silicon is introduced, which is based on a mixture of evolutionary optimization algorithms and the Monte Carlo technique. The optimization technique of the evolutionary algorithm is used to find electron distributions which are in agreement with a given physical quantity, for example, a measured substrate current. In this way, the evolutionary algorithm can calculate backward the electron distributions from results of measurements. A mutation operator, which is based on the Monte Carlo technique, is used to direct the optimization of the evolutionary algorithm toward physically correct distributions. A comparison of the results of this new approach with electron distributions calculated by a full band Monte Carlo program demonstrates both the backward calculation ability of the evolutionary algorithm and the correctness of the physical model in the Monte Carlo-like mutation operator. It becomes obvious that the electron distribution in silicon is mainly determined by the scattering rates. By suppressing the optimization of the evolutionary algorithm the Monte Carlo-like mutation operator alone was found to provide a powerful new type of Monte Carlo technique. While these methods are not as precise as a full band Monte Carlo approach, they are shown to be numerically efficient and give also a good fit to reliability related hot electron effects. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363551
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3324-3326 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Dielectrically apertured vertical-cavity surface-emitting lasers are modeled using a Green's-function-based optical solver that allows calculation of the full-vector lasing modes and their threshold conditions. The laser is separated into subsystems consisting of a planar microcavity, a dielectric aperture, and an active gain medium. The exact Green's function solution for a radiating point source in the planar microcavity is then used to construct an eigenvalue equation for the self-consistent lasing modes. The derived eigenvalue equation is numerically solved to evaluate threshold dependence on aperture and cavity design. Results show a low threshold for thin oxide apertures placed at field antinodes, as well as for tapered oxides with thin tapers placed at field nodes. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122710
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2526-2528 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10–50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116172
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3147-3149 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Based on the energetics for hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for this effect may be considerably lower than the previously assumed value (∼3.6 eV). We support these findings further by recent experimental results related to the giant isotope effect in hydrogen related transistor degradation and the fact that degradation occurs also with relatively low supply voltages. We also show that the high threshold energy model is difficult to defend at these low voltages, even though electron–electron interactions provide a mechanism to create hot electrons with energies of ∼3.6 eV. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125259
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Physical properties of the 1980 Mount St. Helens cryptodome magma (1997)
    Springer
    Bulletin of volcanology 59 (1997), S. 103-111 
    Details
    ISSN: 1432-0819
    Schlagwort(e): Key words Magma ; Mount St. Helens ; Cryptodome ; Viscosity ; Physical ; Rheological ; Experimental
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Geologie und Paläontologie
    Notizen: Abstract  Physical properties of cryptodome and remelted samples of the Mount St. Helens grey dacite have been measured in the laboratory. The viscosity of cryptodome dacite measured by parallel–plate viscometry ranges from 10.82 to 9.94 log10 η (Pa s) (T=900–982  °C), and shrinkage effects were dilatometrically observed at T〉900  °C. The viscosity of remelted dacite samples measured by the micropenetration method is 10.60–9.25 log10 η (Pa s) (T=736–802  °C) and viscosities measured by rotational viscometry are 3.22–1.66 log10 η (Pa s) (T=1298–1594  °C). Comparison of the measured viscosity of cryptodome dacitic samples with the calculated viscosity of corresponding water-bearing melt demonstrates significant deviations between measured and calculated values. This difference reflects a combination of the effect of crystals and vesicles on the viscosity of dacite as well as the insufficient experimental basis for the calculation of crystal-bearing vesicular melt viscosities at low temperature. Assuming that the cryptodome magma of the 18 May 1980 Mount St. Helens eruption was residing at 900  °C with a phenocryst content of 30 vol.%, a vesicularity of 36 vol.% and a bulk water content of 0.6 wt.%, we estimate the magma viscosity to be 1010.8 Pa s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s004450050178
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    The effect of water on the viscosity of a haplogranitic melt under P-T-X conditions relevant to silicic volcanism (1996)
    Springer
    Contributions to mineralogy and petrology 124 (1996), S. 19-28 
    Details
    ISSN: 1432-0967
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Geologie und Paläontologie
    Notizen: Abstract  The viscosities of hydrous haplogranitic melts synthesized by hydrothermal fusion at 2 kbar pressure and 800 to 1040° C have been measured at temperatures just above the glass transition and at a pressure of 1 bar using micropenetration techniques. The micropenetration viscometry has been performed in the viscosity range of 109 Pa s to 1012 Pa s. The samples ranged in water content from 0.4 to 3.5 wt%. For samples with up to 2.5 wt% H2O, the water contents have been determined using infrared spectroscopy obtained before and after each viscometry experiment to be constant over the duration of the measurements. Above this water content a measurable loss of water occurs during the viscometry. The viscosity data illustrate an extremely nonlinear decrease in viscosity with added water. The viscosity drops drastically with the addition of 0.5 wt% of water and then shallows out at water contents of 2 wt%. An additional viscosity datum point obtained from the analysis of fluid inclusions in a water-saturated HPG8 confirms a near invariance of the viscosity with the addition of water between 2 and 6 wt%. These measurements may be compared directly with the data of Hess et al. (1995, in press) for the effects of excess alkali and alkaline earth oxides on the viscosity of HPG8 (also obtained at 1 bar). The viscosity of the melts, compared on an equivalent molar basis, increases in the order H2O〈(Li2O〈Na2O〈 K2O〈Rb2O,Cs2O〈BaO〈SrO〈CaO〈MgO〈 BeO). The extraordinary decrease in melt viscosity with added water is poorly reproduced by the calculation scheme of Shaw (1972) for the range of water contents investigated here. The speciation of water in the quenched glasses can be used to quantify the dependence of the viscosity on hydroxyl content. Considering only the hydroxyl groups as active fluidizers in the hydrous melts the nonlinearity of the viscosity decrease and the difference with the effects of the alkali oxides becomes larger. Consequences for degassing calcalkaline rhyolite are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s004100050170
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Effect of local vibrations on the H and D atom densities at a Si surface (1999)
    Springer
    Semiconductors 33 (1999), S. 1002-1003 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The equilibrium surface densities of passivating adatoms for a silicon crystal in equilibrium with H2 or D2 gas are calculated. The difference in the surface densities of H and D adatoms is determined by the difference in their local surface vibrations. The equilibrium deuterium surface densities are an order of magnitude higher than the hydrogen surface densities.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187824
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...