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  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1225-1232 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature photoluminescence (PL) spectra were investigated for CuAlSe2 epilayers grown on GaAs(001) substrates by means of low-pressure metalorganic chemical-vapor deposition. PL properties were studied with relation to metalorganic precursors used for the growth. High-quality undoped epilayers exhibited PL peaks related to a free exciton (2.739 eV) and a bound exciton (2.677 eV). The other undoped epilayers exhibited PL bands at 2.3, 2.4, and 2.5 eV originating from donor-acceptor (D-A) pair recombinations. Some of them were found to have a common activation energy for the thermal quenching of 50±10 meV. The PL spectrum changed drastically by impurity doping. Intense green emissions at 2.51 and 2.43 eV were observed in Zn and Mg-doped epilayers, respectively, which were interpreted as D-A pair recombinations based on the dependencies of the PL spectra on excitation intensity, decay time, and temperature. The donor and the acceptor activation energies (ED and EA) were estimated to be 110 and 230 meV, respectively, for the Zn-related D-A pair emission at 2.51 eV. Similarly, ED and EA for CuAlSe2:Mg were estimated to be 140±10 and 270±10 meV, respectively. Furthermore, D-A pair recombinations between 2.3 and 2.5 eV for CuAlSe2:I were studied. CuAlSe2 was proven to be a promising material for short-wavelength visible-light-emitting devices. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358990
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  • 2
    Digitale Medien
    Digitale Medien
    Laser power dependence of particulate formation on pulse laser deposited films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2029-2036 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The density and the size of particulates in films laser-deposited at room temperature using various target materials were observed to depend strongly on the target material and the laser power density. However, loose universal relations between the deposition rates and the particulate density as well as the particulate size were found, where the latter corresponds approximately to the ratio of the laser power density to the ablation threshold. Furthermore, particulates consisting of only some of the target elements such as CuOx were found. Additionally, an acceptably high deposition rate was obtained by using halide and sulfide targets. These materials offer a possibility of deposition using a low power laser. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360179
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  • 3
    Digitale Medien
    Digitale Medien
    Preparation and characterization of CuAlxGa1−xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3338-3345 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low-pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c-axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin-orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal-field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low-temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish-purple with increasing x. A peak due to a free-to-acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective mass. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363245
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  • 4
    Digitale Medien
    Digitale Medien
    Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3009-3015 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low-pressure metalorganic chemical-vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x-ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron-probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good-quality epilayers are close to those of the bulk crystal. The slight increase of the crystal-field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low-temperature PL spectra exhibited an intense peak at 1.71 eV, the energy being in good agreement with the A-exciton energy. A weak peak due to a free-to-acceptor transition was also observed at 1.66 eV. A broad PL peak at 1.76 eV was observed together with the intense band-edge PL at 1.67 eV, and the peak was assigned to relate to the B-exciton transition.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357503
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  • 5
    Digitale Medien
    Digitale Medien
    Application of 6 MeV/n heavy-ion beams to biophysical experiments (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2000-2004 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new accelerator facility and two irradiation methods using 6 MeV/n heavy-ion beams are described along with preliminary results concerning their applications to biophysical investigations. The beams are obtained from the injector linac installed at the Heavy Ion Medical Accelerator in Chiba. Various ion species (He–Xe) having different charge states are accelerated to the same velocity, which is suitable for comparing the charge effects of heavy ions in the high linear energy transfer region. An attempt has been made to test the usefulness of the apparatus for studying track structure by using pBR322 plasmid DNA and spores as targets in vacuum. Newly constructed equipment with a molecular-beam source (water vapor) placed on this beam line is also described. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146958
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  • 6
    Digitale Medien
    Digitale Medien
    Application of 6 MeV/n heavy-ion beams to biophysical experiments (abstract)a) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1374-1374 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new facility using 6 MeV/n heavy-ion beams is described along with preliminary results of its applications to biophysical investigations. The beams are obtained at the terminal of the injector linac installed in the heavy-ion medical accelerator in Chiba. Various ion species (He–Xe) having different charge states are accelerated to the same velocity, which is suitable for comparing the charge effects of heavy ions. An attempt has been made for investigations of the track structure by using pBR322 plasmid DNA and spores as targets. Newly constructed equipment with the molecular beam source (H2O) placed on this beam line is also described. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146672
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  • 7
    Digitale Medien
    Digitale Medien
    Thermal conversion of semi-insulating GaAs in high-temperature annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 615-618 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-temperature annealing of semi-insulating GaAs has been studied. Thermal conversion induced by annealing at 1060–1200 °C can be explained by the causes of both the reduction of EL2 concentration and the generation of deep acceptors during high-temperature annealing. Both of them can be rationalized by the supposition that the antisite defect, AsGa, breaks into AsI and VGa, and the latter is a deep acceptor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353371
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  • 8
    Digitale Medien
    Digitale Medien
    Nonlinear optical properties of 2-adamantylamino-5-nitropyridine crystals (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Several organic materials with a bulky donor group have been developed for second-order nonlinear optics. Among these materials, 2-adamantylamino-5-nitropyridine (AANP) crystal has the largest second-order nonlinear optical coefficient. By second-harmonics measurement at 1.064 μm, coefficients of d31 and d33 were determined to be 80 and 60 pm/V, respectively. Angle-tuned phase-matched second-harmonic generation with a conversion efficiency=2×10−3 W−1 has been demonstrated using a 1 mm AANP bulk crystal at 1.064 μm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104829
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  • 9
    Digitale Medien
    Digitale Medien
    Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3880-3885 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (tBAs) were investigated using a slow positron beam. The concentration of Ga vacancies, VGa, generated in GaAs epilayers was increased drastically by heavy Si doping of more than 1019 cm−3, where the deactivation of Si occurred. This result suggests that the deactivation of Si in GaAs is mainly caused by a VGa-related defect, such as a VGa-SiGa complex. The VGa concentration in the samples grown using tBAs was found to be almost the same as that grown using arsine (AsH3). On the other hand, the VGa concentration in MOCVD-grown Si-doped GaAs is lower than that in molecular-beam-epitaxy-grown material for the same Si concentrations. The generation mechanisms of VGa were found to be greatly dependent on the growth and/or doping methods, in addition to the Si doping concentration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352900
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  • 10
    Digitale Medien
    Digitale Medien
    Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transport (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1648-1655 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resistivities, carrier concentrations, optical absorption, and photoluminescences of undoped and Cd,Zn-doped CuAlSe2 single crystals grown by chemical vapor transport were studied. The electrical and optical properties were almost unchanged after annealing under Se pressure. However, the resistivity increased about seven orders of magnitude after annealing in vacuum. The resistivity also increased by Cd or Zn doping. The samples showed p-type conduction even when Cd or Zn was doped. An acceptor ionization energy of about 65 meV was obtained. The mobility showed the dominance of lattice scattering for temperatures between 80 and 200 K. Two independent, broad, red luminescences having their own excitation energies were observed at relatively low temperature. We have proposed the configuration coordinate model for this characteristic emission. The emission can be interpreted as radiative transitions from a deep center to the respective A or C valence bands, accompanied by a lattice relaxation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349531
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