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  • 1
    Electronic Resource
    Electronic Resource
    Structural evolution of W nano clusters with increasing cluster size (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7402-7404 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have recorded the x-ray diffraction (XRD) patterns of nanometer-size W metal clusters prepared at different average cluster sizes. Nanometer-size W metal clusters were produced through a collision induced clustering mechanism of W metal atoms generated by decomposing W(CO)6 vapors. The XRD patterns clearly showed that structure changed from amorphous→face- centered-cubic (fcc)→body-centered-cubic (bcc) with increasing average cluster size. This implies that W metal clusters do not simply approach the bulk bcc structure but pass through an intermediate fcc structure before they reach the bulk structure, as predicted by Tománek, Mukherjee, and Bennemann [Phys. Rev. B 28, 665 (1983)]. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480063
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  • 2
    Electronic Resource
    Electronic Resource
    Esterification of stearic acid with glycerol by lipase in foam (1992)
    s.l. : American Chemical Society
    Langmuir 8 (1992), S. 2846-2847 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00047a043
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  • 3
    Electronic Resource
    Electronic Resource
    A design of a nanometer size metal particle generator: Thermal decomposition of metal carbonyls (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4366-4369 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a method which can produce both pure and alloy nanometer size metal particles in a large scale. This method combines a thermal decomposition of metal carbonyls with a collision induced clustering. Metal carbonyls are thermally decomposed with a hot filament and resultant bare metal atoms undergo collisions to produce nanometer size metal particles. This method requires a very simple experimental setup even though it is a high efficiency production method. Using this method, we have produced, high purity Fe, Mo, and alloy Fe/Mo nanometer size metal particles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150081
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4546-4549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphors of alkali-earth sulfides SrS:Eux (x=0.05 and 0.10 mole per mole of SrS), SrSO:Eux (x=0.05), and CaS:Eux (x=0.0005, 0.05, and 0.10) were studied by x-ray photoelectron spectroscopy. The CaS:Eu phosphors were found to be stabilized against atmospheric water vapor and carbon dioxide by annealing at high temperature for several hours. The S 2p core level shows that the chemical state of sulfur changes abruptly from −2 to +6 between the annealing temperature of 900 and 1100 °C. The Ca core level, on the other hand, does not show much change depending on the annealing temperature. From the Eu 3d core-level spectra of SrS:Eux and CaS:Eux (x=0.10) phosphors, we confirm that the valence state of Eu in these phosphors is Eu3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352799
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  • 5
    Electronic Resource
    Electronic Resource
    An atomic oxygen environmental cell for a transmission electron microscope (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1863-1868 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The capabilities of the transmission electron microscope have been extended to enable in situ studies of the interaction of atomic oxygen with various solids to be performed. This has been accomplished by modifying the specimen chamber region of a JEOL 200CX TEM/STEM electron microscope to accommodate a specially designed environmental cell and specimen heating stage. With this arrangement it is possible to continuously observe changes in the appearance of a specimen as it undergoes reaction with a beam of atomic oxygen. In this paper a description of the technique will be presented together with some applications which highlight its advantages over conventional transmission electron microscopic post-reaction examinations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141109
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  • 6
    Electronic Resource
    Electronic Resource
    Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2014-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sn-doped In0.5Ga0.5P epilayers, grown on semi-insulating (100) GaAs substrates by the liquid phase epitaxy technique, have been investigated using photoluminescence and Hall effect measurements from 15 to 300 K. The Sn dopant in InGaP shows amphoteric behavior with a compensation ratio of ∼0.4–0.6. Transitions involving shallow Sn acceptors have been identified through photoluminescence measurements for the first time and the ionization energy of Sn was determined to be 57 meV, which is in good agreement with the hydrogenic acceptor value. It was also found that the Sn shallow donor has an ionization energy 17–12 meV with increasing carrier concentrations through Hall measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366931
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  • 7
    Electronic Resource
    Electronic Resource
    Concentration dependent photoluminescence of Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) of Te-doped In0.5Ga0.5P epilayers grown by the liquid phase epitaxy technique has been investigated as a function of carrier concentration. The PL results are interpreted using a model taking into account nonparabolicity of the conduction band. Both the band filling as well as band tailing due to the Coulomb interaction of free carriers with ionized impurities and band shrinkage due to the exchange interaction between free carriers are considered in order to properly portray the observed features of the PL spectra. The theoretical calculations are in satisfactory agreement with the observed PL results. The PL line shape is well explained by a direct transition with a simple k-selection rule up to a carrier concentration of 2.0 ×1018 cm−3. Above the carrier concentration of 2.0 ×1018 cm−3, on the other hand, it is properly interpreted in terms of non-k-conserving transitions that arise from the indirect recombination of electrons in a highly filled conduction band. It was found that a concentration dependent gap shrinkage due to the exchange interaction in Te-doped In0.5Ga0.5P at 17 K is described by the relation Ece=2.34×10−8 n1/3 (eV). The concentration dependent effective mass has also been calculated using Kane's three band model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365754
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  • 8
    Electronic Resource
    Electronic Resource
    Transport property of In0.5Ga0.5P layers grown by liquid phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1527-1530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependent Hall mobility and carrier concentration of In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by the liquid phase epitaxy technique have been investigated in the range of 77–300 K. The electron mobility and carrier concentration were of the order of 806 cm2 V−1 s−1, and 6.5×1016 cm−3, respectively at 300 K. The model (taking into account ionized impurity, alloy and space-charge scattering mechanisms) is considered in order to properly portray the observed features of the electron mobility results. The theoretical prediction is in good agreement with the observed results. The electron mobility was limited by ionized scattering up to 120 K and was also limited by alloy, space-charge scattering up to 300 K. It was found that the space-charge scattering has a stronger temperature dependence, T−1, than the usual T−0.5 and the In0.5Ga0.5P epilayer was heavily compensated for having an acceptor concentration of NA=8.5×1016 cm−3 with a compensation ratio of 0.5. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366861
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced thermodynamic stability of tetragonal-phase field in epitaxial Pb(Zr,Ti)O3 thin films under a two-dimensional compressive stress (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1457-1459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional thermodynamic model was developed to account for the observed difficulty in the fabrication of epitaxial Pb(Zr,Ti)O3 (PZT) thin films in which tetragonal and rhombohedral phases coexist. The thermodynamic formalism based on the Landau–Devonshire's phenomenological theory predicts the enhanced thermodynamic stability of the tetragonal-phase field under a two-dimensional compressive stress. We have experimentally proved this prediction by fabricating an epitaxially oriented tetragonal PZT thin film on MgO substrate with the target composition corresponding to the bulk morphotropic phase boundary (MPB). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120609
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  • 10
    Electronic Resource
    Electronic Resource
    Ultralow threshold multiquantum well InGaAs lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1782-1784 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107186
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