Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 692-695
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report field-effect measurements of the density-of-states (DOS) distribution in the last-deposited surface of undoped glow-discharge a-(Si,Ge):H alloy films containing up to 15% Ge. Over the energy range investigated (Ef≤E≤Ef+0.4 eV) the DOS exhibits a peak approximately 0.7 eV below Ec, and the total number of midgap states increases monotonically by a factor of 2 with Ge content. No structure specifically attributable to Ge defect states is seen. These results are interpreted in terms of a diphasic microstructural model of the alloy films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337416
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