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  • 1
    Digitale Medien
    Digitale Medien
    Effects of write current switching time on recording characteristics (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5648-5648 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-frequency recording is essential for a recording channel with both a high data rate and a high linear recording density, and this study examined the ways in which performances are affected by the switching time of the write current, ts, and the disk velocity, v. The switching time, defined as (tr+tf)/2, where tr and tf are the rise time and the fall time of the write current, was changed from 5 to 20 ns, while v was changed from 12 to 26 m/s. Co-based thin-film media with a coercivity of about 2.5 kOe and a remanence-thickness product of about 100 G μm were used for recording the data. The flying height of the head was maintained at 50 nm regardless of disk velocity. This study confirmed that the overwrite characteristics are strongly related to the product of ts and v. Overwrite here was defined as the ratio of the residual fundamental frequency component amplitude of a 21 kFCI signal to the original one after overwriting with a 86 kFCI signal. Suitable overwrite characteristics were obtained when t*sv was smaller than πa, where a is the transition parameter derived from the equation proposed by Williams and Comstock. The transition length on the medium was determined primarily by πa when t*sv was smaller than πa, but was determined by t*sv when t*sv was larger than πa. Linear density characteristics and noise characteristics and their relationship to the medium properties will also be addressed in this talk. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362269
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  • 2
    Digitale Medien
    Digitale Medien
    Effects of high temperature rapid thermal annealing using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8498-8502 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of high temperature rapid thermal annealing (HT-RTA) using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon (poly-Si) films in association with their microscopic structure were studied. Samples with a phosphorus concentration of 3.1×1017–6.0×1020 cm−3 were prepared and annealed by HT-RTA ranging from 1150 to 1350 °C. During HT-RTA, the sample surface was laterally swept by gas flames. The resistivity of the samples decreased with increasing annealing temperature, and the lowest resistivity was 4.8×10−4 Ω cm for the sample doped with P of 6.0×1020 cm−3 when annealed at 1350 °C. Hall mobility, on the other hand, increased first and then decreased with increasing P concentration. The highest Hall mobility was 71.3 cm2/V s for the sample annealed at 1350 °C of which the P concentration was 3.5×1019 cm−3. The results suggest that the grain boundary potential barriers for carriers decreased with increasing doping concentration and annealing temperature, and that the total area of grain boundaries in the films decreased with increasing annealing temperature because of secondary grain growth and the shrinkage of boundary width. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362527
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  • 3
    Digitale Medien
    Digitale Medien
    Effects of gas flame annealing on the structure of poly-Si films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1459-1464 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of gas flame annealing on the structure of polycrystalline Si films was studied using transmission electron microscopy and electron spin resonance. This annealing technique involved heating the sample surface to more than 1100 °C using flat gas flames with a scan rate of 1 mm/s and a heating rate of about 260 °C/min. Electron microscopy images revealed that the secondary grain growth proceeded with increasing the number of annealing times (annealing frequency) and that the grain size for samples annealed at 1360 °C was more than 1 μm whereas secondary grain growth was not significant for samples annealed at 1150 °C. Further, it was found that the spin density in the samples annealed at 1360 °C decreased from 1.5×1018 cm−3 to 3.8×1017 cm−3. It was concluded from the spin resonance results and the electron microscopy images that the secondary grain growth consists of two processes, the initial structural rearrangement of the grain boundaries and the subsequent grain growth. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360303
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  • 4
    Digitale Medien
    Digitale Medien
    Transient phases of a-Si by rapid heating (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1766-1770 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A structural model of a-Si and a model for its transient phases have been proposed. In these models, it is assumed that a-Si is composed of many small regions (or clusters with a radius of about 50 A(ring)) having different free energies. When a-Si is rapidly heated to a temperature slightly less than 1450 K so as to avoid crystallization, it transforms to a new phase in which both a-Si clusters and super-cooled l-Si coexist. By using these models, anomalous phenomena observed in explosive crystallization and enhanced diffusion phenomena in rapid thermal annealing (RTA) process can be explained. Furthermore, the viscosity of super-cooled Si fluid at 1000 °C induced by the RTA process is estimated to be 107–108 mPa s, which leads to the determination of T0 value of about 1300 K in Vogel–Fulcher–Tammann (VFT) relation. However, this T0 value differs from that previously reported. This discrepancy has been discussed and it is concluded that T0 in the VFT relation is not a constant but a function of (dT/dt). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358872
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  • 5
    Digitale Medien
    Digitale Medien
    Direct measurement of magnetic circular dichroism and Kerr rotation spectra in vacuum ultraviolet using four-mirror polarizer : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1589-1591 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A reflection-type four-mirror polarizer has been constructed and used in magnetocircular dichroism and Kerr rotation studies in the vacuum ultraviolet region. Geometrical properties and polarization characteristics were measured. The polarizer is sufficient to convert linearly polarized synchrotron radiation into circularly polarized light. Magneto-optical measurements were performed using magnetization modulation technique, and measured magnetocircular dichroism and Kerr rotation spectra in yttrium iron garnet were shown to satisfy the Kramers–Kronig relation. It is concluded that the reflection-type four-mirror polarizer together with the synchrotron radiation can be used in magneto-optical studies with high precision. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145916
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  • 6
    Digitale Medien
    Digitale Medien
    New data acquisition system for the JFT-2M tokamak : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 515-517 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new VAX-based data acquisition and analysis system for JFT-2M has been developed to handle various types of data flexibly. It consists of two main VAX4200 computers sharing data disks (2GB*2) with DSSI cluster and distributed VAXstations. One VAX computer acquires and stores CAMAC data. The other is used mainly for analyzing earlier data on data disks or a magneto-optical disk autochanger (0.6GB*56), where old data acquired by a previous system are also stored and utilized. Data acquisition software originally developed at NIFS was modified and localized for this system. It is characterized by centralized data management and network-wide expandability from a small VAXstation to cluster-wide VAXes. Presently, 3 MB of data for every shot are acquired, stored, and analyzed to obtain fast plasma and shape monitor outputs within 3 min. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146335
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  • 7
    Digitale Medien
    Digitale Medien
    Lock-in amplifier with autotracking bandpass filter (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4021-4022 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A simple, low-cost lock-in amplifier was described. This system has an autotracking bandpass filter which synchronizes its center frequency automatically with the reference frequency © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147268
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  • 8
    Digitale Medien
    Digitale Medien
    Palladium(0) catalyzed reaction of 1,3-diene epoxides. A useful method for the site-specific oxygenation of 1,3-dienes (1979)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 1623-1625 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja00500a058
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  • 9
    Digitale Medien
    Digitale Medien
    A new method for converting oxiranes to allylic alcohols by an organosilicon reagent (1979)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 2738-2739 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja00504a045
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  • 10
    Digitale Medien
    Digitale Medien
    Growing a periodic microstructure on the superconductor crystal surface by electrocrystallization (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel microstructure is formed on the single crystal surfaces of the oxide superconductor Ba0.6K0.4BiO3 (BKBO). Micron-sized barium islands periodically grew on the mother crystal during electrocrystallization of BKBO. Experimental analysis suggested the relation of this unusual microstructure to the Liesegang rings well-known for a crystal growth in gels. The present discovery provides a potential technology for fabricating microstructures on substrates of solids. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120999
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