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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3276-3283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of substrate preparation on the structure and orientation of MgO films grown on (001) GaAs using pulsed laser deposition has been investigated. Textured MgO films displaying a (111)MgO(parallel)(001)GaAs orientation relation with x-ray rocking curve full width at half maximum (FWHM) values as low as 1.8° were obtained in cases where the native GaAs surface oxide was only partially desorbed prior to growth. Reflection high-energy electron diffraction, transmission electron microscopy (TEM), and x-ray pole figure analysis of these films reveals a preferential orientation within the plane of the substrate: [11¯0]MgO(parallel)[11¯0]GaAs and [112¯]MgO(parallel)[110]GaAs. An interfacial layer (∼5 nm thick) was observed in high resolution TEM analysis, and was attributed to a remnant native GaAs oxide layer. Complete desorption of the native GaAs oxide at ∼600 °C in vacuum prior to MgO growth led to significant surface roughening due to Langmuir evaporation, and resulted in randomly oriented polycrystalline MgO films. Growth of MgO on Sb-passivated GaAs substrates, which provided smooth, reconstructed surfaces when heated to 350 °C in vacuum, resulted in cube-on-cube oriented films [i.e., (001)MgO(parallel)(001)GaAs,[100]MgO(parallel)[100]GaAs] with x-ray rocking curve FWHM values as low as 0.47°. TEM analysis of the cube-on-cube oriented films revealed evidence of localized strain fields at the MgO/GaAs interface, indicating the presence of misfit dislocations in the MgO layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7261-7267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallography and microstructure of an antiferroelectric ceramic of approximate composition Pb0.97La0.02(Zr0.65Sn0.25Ti0.10)O3 have been examined. Transmission electron microscopy (TEM), x-ray, and neutron powder studies were carried out. The cell is metrically tetragonal with a c/a ratio of 0.993 when indexed to the parent cubic perovskite cell. The structure exhibits both a commensurate supercell, believed to be associated with oxygen octahedra distortions, and an incommensurate modulation. The different crystallographic variants of the tetragonal antiferroelectric phase gave rise to a hierarchy of domain structures. Charging of TEM specimens having an incomplete conductive coating caused domain migration.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6520-6522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold evaporated on air-cleaved (00.1) graphite was observed by scanning tunneling microscopy. Most individual gold islands were not stable during scanning; some islands even appeared to translate. These observations suggest that the interaction between the gold islands and the scanning tunneling microscope tip is stronger than that between the gold and the air-cleaved graphite substrate. Some gold islands were observed to be stable. It was deduced that stable islands at steps were located on the upper layer rather than on the lower layer. It is also deduced that the alignment of the elongated gold grains in the continuous film may be related to cleavage steps.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 540-543 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument designed to monitor molecular motions in multiphasic, weakly fluorescent microscopic systems. It combines synchrotron radiation, a low irradiance polarized microfluorimeter, and an automated, multiframing, single-photon-counting data acquisition system, and is capable of continually accumulating subnanosecond resolved anisotropy decays with a real-time resolution of about 60 s. The instrument has initially been built to monitor ligand–receptor interactions in living cells, but can equally be applied to the continual measurement of any dynamic process involving fluorescent molecules, that occurs over a time scale from a few minutes to several hours. As a particularly demanding demonstration of its capabilities, we have used it to monitor the environmental constraints imposed on the peptide hormone epidermal growth factor during its endocytosis and recycling to the cell surface in live cells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3716-3721 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument based on the novel combination of synchrotron radiation, a high sensitivity time-resolved microfluorimeter, and a multiframe single photon counting data acquisition system. This instrument has been designed specifically to measure kinetic events in live cells using fluorescence resonance energy transfer, and is capable of rapidly collecting multiple consecutive decay profiles from a small number of fluorophores. The low irradiance on the samples (〈10 mW/cm2) greatly reduces probe photobleaching and specimen photodamage during prolonged exposures. The Daresbury Synchrotron Radiation Source provides fully wavelength tunable light pulses that have a full width half-maximum of 160 ps at a repetition rate of 3.125 MHz, with the high temporal stability required for continuous measurements over periods of hours. A very low limit of detection (〈104 molecules/mW/cm2) is accomplished by combining a high-gain single photon counting detection system with a low fluorescence background optical layout. The latter is achieved by the inclusion of collimating optics, a reflecting objective, and a specially designed beam stop situated in the epi-fluorescence light-path. A typical irradiance of 8 mW/cm2 on a sample of ∼105 fluorescein molecules gives, in under 20 s, a fluorescence decay profile with a peak height of 104 counts, over 400 channels, and a signal to background ratio better than 40. The data acquisition system has been developed to have a real-time time-resolved fluorescence collection capability (denoted as TR2) so that fluorescence lifetime data can be continually collected throughout a changing process. To illustrate the potential of this instrument, we present the results of a TR2 experiment in which lifetime measurements of fluorescence resonance energy transfer are used to monitor the degree of clustering of epidermal growth factor receptors during endocytosis, over a period of about 1 h, with a 5 s resolution. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1614-1622 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (∼2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm−1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1517-1522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expitaxial ferroelectric BaTiO3 thin films have been grown on (001) MgO and MgO-buffered (001) GaAs substrates by pulsed laser deposition to explore the effect of substrate lattice parameter. X-ray-diffraction studies showed that the BaTiO3 films on both MgO single-crystal substrates and MgO-buffered (001) GaAs substrates have a cube-on-cube epitaxy; however, for the BaTiO3 films grown on MgO the spacing of the planes parallel to the substrate was close to the c-axis dimension of the unconstrained tetragonal phase, whereas the BaTiO3 films on MgO/GaAs exhibited a spacing closer to the a-axis dimension of the unconstrained tetragonal phase. The cube-on-cube epitaxy was maintained through the heterostructures even when thin epitaxial intermediate buffer layers of SrTiO3 and La0.5Sr0.5CoO3 were used. The intermediate layers had no effect on the position of the BaTiO3 peak in θ-2θ scans. Together, these observations indicate that, for the materials combinations studied, it is the thermal-expansion mismatch between the film and the underlying substrate that determines the crystallographic orientation of the BaTiO3 film. Preliminary measurements indicate that the BaTiO3 films are "weakly'' ferroelectric. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3587-3589 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence from a thin ruby film, formed by epitaxial growth on a sapphire substrate, is shown to be a sensitive monitor of both the irradiation dose and the strain produced by irradiation of argon ions having an end of range exceeding the thickness of the ruby film. Decreases in fluorescence intensity are detectable for doses in excess of 1012 cm2, whereas no damage is detectable by Rutherford backscattering spectrometry/channeling until doses almost two orders of magnitude larger. Using the systematic shift in fluorescence frequency observed with irradiation, it is concluded that lattice strain accumulates rapidly for doses in excess of 1014 cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1682-1684 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A characteristic feature of epitaxial [110] thin films of YBa2Cu3O7−δ and PrBa2Cu3O7−x on [110]SrTiO3 substrates is that the films have a tendency to crack along the (001) planes. We have studied the crack spacing as a function of deposition temperature and film thickness. The experimental data have been found to be in excellent agreement with a theoretical analysis of the crack spacings in brittle films. The study has allowed us to determine the critical thickness below which no cracks are expected to form as a function of temperature for [110] films of YBa2Cu3O7−δ, PrBa2Cu3O7−x, and YBa2Cu3O7−δ/ PrBa2Cu3O7−x bilayers.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6357-6364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption edge and the near-absorption edge characteristics of undoped ZnO films grown by laser ablation on various substrates have been investigated. The band edge of films on C [(0001)] and R-plane [(1102)] sapphire, 3.29 and 3.32 eV, respectively, are found to be very close to the single crystal value of ZnO (3.3 eV) with the differences being accounted for in terms of the thermal mismatch strain using the known deformation potentials of ZnO. In contrast, films grown on fused silica consistently exhibit a band edge ∼0.1 eV lower than that predicted using the known deformation potential and the thermal mismatch strains. This behavior is attributed to the small grain size (50 nm) realized in these films and the effect of electrostatic potentials that exist at the grain boundaries. Additionally, the spread in the tail (E0) of the band edge for the different films is found to be very sensitive to the defect structure in the films. For films grown on sapphire substrates, values of E0 as low as 30 meV can be achieved on annealing in air, whereas films on fused silica always show a value 〉100 meV. We attribute this difference to the substantially higher density of high-angle grain boundaries in the films on fused silica. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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