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  • 1
    Digitale Medien
    Digitale Medien
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363112
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  • 2
    Digitale Medien
    Digitale Medien
    Annealing dynamics of arsenic-rich GaAs formed by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1470-1475 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the annealing temperature dependence of structural and electrical properties in heavily arsenic implanted GaAs which has a similar amount of excess arsenic to low temperature GaAs (LT-GaAs). The fundamental properties of this material are quite similar to those of LT-GaAs. High resolution x-ray diffraction measurements have revealed that it has an increased lattice constant, which is reduced to the value of bulk GaAs by annealing between 300 and 400 °C. Electrical conduction in this material is dominated by hopping between deep states, which is also reduced by annealing above 350 °C. In samples annealed at temperatures ranging from 600 to 850 °C, the dominant electron trap is EL2; it has been confirmed by resistivity measurements with n-i-n structures that the Fermi level is pinned by EL2. In samples annealed below 500 °C, the dominant electron trap is not EL2 but the U-band, although electron paramagnetic resonance measurements show the existence of a large concentration of the ionized arsenic antisite defect (AsGa+). This supports the notion that the U-band is formed by AsGa defects with slightly modified carrier emission properties compared with EL2. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360235
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  • 3
    Digitale Medien
    Digitale Medien
    Characterization of low-temperature AlxGa1−xAs lattice properties using high resolution x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using high resolution x-ray diffraction techniques, we have studied the lattice parameter behavior of low-temperature (LT) AlxGa1−xAs as a function of annealing temperature and aluminum content. Similar to LT GaAs, the as-grown LT AlxGa1−xAs layers exhibit a dilated lattice constant which, upon annealing, contracts to that of "normal'' material. The onset of this contraction in LT Al0.3Ga0.7As, however, is found to occur at an annealing temperature nearly 100 °C higher than that required for LT GaAs. In addition, the relative lattice expansion in the as-grown LT layer is found to be a decreasing function of Al content, ranging from 0.099% for LT GaAs to 0.059% for LT Al0.3Ga0.7As. This is attributed to lower than expected As incorporation in the LT AlxGa1−xAs during growth. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359473
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  • 4
    Digitale Medien
    Digitale Medien
    The dissociation energy and the charge state of a copper-pair center in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 474-476 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02±0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 〈111〉 sites. This implies that the pair is either covalently bonded, or it consists of an ionically bonded doubly negatively charged acceptor and a singly charged donor. To distinguish between these two models, the dependence of the hole emission rate on the electric field in the depletion region was studied. The absence of the Pool-Frenkel emission enhancement ruled out the acceptor nature of the center and the purely ionic type of bonding. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu pair is a donor with either covalent or mixed type of bonding. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120790
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  • 5
    Digitale Medien
    Digitale Medien
    Gettering of iron by oxygen precipitates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1460-1462 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen precipitate densities was performed. The number of iron precipitation sites was obtained from the iron precipitation kinetics using Ham's Law. At low temperatures, the iron precipitate density corresponded to the oxygen precipitate density. A strong temperature dependence of the iron precipitate density was observed for the samples with larger oxygen precipitate densities. These data were used to simulate iron precipitation during a slow cool. From those simulations, optimal cooling rates were obtained for different silicon materials assuming various iron precipitation site densities in the epitaxial layer. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120592
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  • 6
    Digitale Medien
    Digitale Medien
    Interstitial copper-related center in n-type silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2349-2351 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: n-type silicon samples were measured by deep level transient spectroscopy (DLTS) immediately (within one hour of storage at room temperature, required for the preparation of Schottky-diodes) after copper diffusion and quench. A donor level at Ec-(0.15±0.01) eV with a concentration of up to 1013 cm−3 was detected. The amplitude of the DLTS peak decreased with the time of storage at room temperature, and stabilized at a concentration (4 to 7)×1011 cm−3 after 15–20 h. The activation energies and prefactors of the decay of the DLTS peak in n-type Si and the reactivation of copper-compensated boron in p-type Si concur. This correlation suggests that the deep level is interstitial copper itself or a complex of interstitial copper. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120026
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  • 7
    Digitale Medien
    Digitale Medien
    Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Though copper can be quenched interstitially in p-type silicon, it precipitates completely within 10–15 h at room temperature. The decay of concentration of interstitial copper in p-Si was monitored by capacitance–voltage characteristics (C–V) and surface photovoltage (SPV). It is shown that the time constant of change of minority carrier diffusion length, as measured by SPV, correlates well with the precipitation of interstitial copper. The capture cross section of interstitial copper is estimated to be in the range 10−15–10−17 cm2. It is shown that interstitial copper is far less deleterious than iron and can limit the diffusion length of commercial p-Si wafers only if its concentration is above 1013 cm−3. However, copper precipitates may be detrimental to lifetime even for much lower copper concentrations. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119355
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  • 8
    Digitale Medien
    Digitale Medien
    Transient ion drift detection of low level copper contamination in silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3576-3578 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The transient ion drift (TID) method was used to measure quenched interstitial copper concentrations in both copper plated and copper implanted silicon. Comparison with existing literature data allows one to conclude that, contrary to the general expectation, it is possible to quench in most of the Cu dissolved at temperatures of 600 °C and below. This result suggests that the TID technique could be an excellent means to detect copper contamination in p-type silicon. The expected detection limit, on the order of 1011 cm−3, makes the method a potentially interesting tool to use in gettering or in-diffusion barrier studies. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119238
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  • 9
    Digitale Medien
    Digitale Medien
    Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900 °C for 30 min in addition to normal misfit dislocations with extra-half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114975
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  • 10
    Digitale Medien
    Digitale Medien
    Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 713-717 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The use of Ham's law in various forms to analyze precipitate site density is discussed. Ham's law is also applied to situations where the site density is of the same order as the solute concentration. While the results are general, this analysis uses iron precipitation and iron-boron pairing in silicon as example systems. The results of Ham's paper are reviewed and several implementations of Ham's Law are compared and fitted to experimental data. Iron-boron pairing is described using Ham's law and a capture radius of the boron of 6 nm is obtained. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368127
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