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  • 1
    Electronic Resource
    Electronic Resource
    Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 431-436 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.431.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Coherent and incoherent dynamics of excitons in semiconductor microcavities (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1295-1303 
    Details
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have investigated the dynamics of impulsively excited planar microcavities in the strongly couple regime. With resonant, coherent excitation, the emitted light shows vacuum-Rabi oscillations and a lifetime corresponding to twice the cavity lifetime. As the light intensity is increased, the exciton bleaching leads to reduced normal-mode splitting. The role of interface disorder on the dynamic splitting is discussed. Coherence transfer in exciton-exciton scattering is observed. Off-resonant excitation leads to long lifetimes limited by scattering into the radiatively coupled states of the exciton-cavity system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457201
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  • 3
    Electronic Resource
    Electronic Resource
    Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3653-3655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quarter-wave reflectors consisting of sets of GaN and Al0.34Ga0.66N layers have been grown on sapphire substrates by atmospheric-pressure metal organic chemical vapor deposition. A periodic structure with flat interfaces was observed by high-resolution scanning electron microscopy. X-ray diffraction measurements were performed to characterize the structures, from which the Al content x in the AlxGa1−xN layers was determined to be 0.34. No cracks could be seen on the surface of the reflectors by optical microscopy. The measured peak reflectivity at 390 nm increases with the number of pairs and reaches as high as 96±2% in the 35-pair reflector. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122852
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  • 4
    Electronic Resource
    Electronic Resource
    Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1460-1462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report emission from individual quantum dots excited by tunneling current injection using a scanning tunneling microscope (STM). By scanning the STM tip above the self-assembled InAs quantum dots, a spatially resolved scanning tunneling luminescence (STL) image was measured, which contained a fluorescent circular region with a diameter of 50 nm originating from a single InAs quantum dot. It was found that the spatial resolution of the STL system was about 40 nm, which is mainly due to lateral diffusion of holes injected into a GaAs capping layer grown at low temperature (480 °C). We also obtained STL spectra with a sharp single luminescent peak from a single InAs quantum dot. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122174
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  • 5
    Electronic Resource
    Electronic Resource
    Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 800-802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a seeded self-assembling growth technique for the fabrication of quantum dot structures by metal–organic chemical-vapor deposition. GaAs quantum dots were grown at the bottom of two-dimensional V-groove (2DVG) structures, which were composed of (111)A and (111)B facets on a GaAs(100) substrate. The 2DVG was grown by selective growth on a SiO2 patterned substrate. It was found that vertical GaAs quantum wires were also simultaneously formed in the 2DVGs. Using this technique, the stacking of GaAs quantum dots was realized. Photoluminescence and cathodoluminescence from each structure evidenced the formation of both the quantum wires and the quantum dots. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120897
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  • 6
    Electronic Resource
    Electronic Resource
    Microprobe spectroscopy of localized exciton states in II–VI quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 148-150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated exciton localization in Zn1−xCdxSe/ZnSe quantum wells by microprobe, spatially resolved luminescence. We found that compositional fluctuations in Cd-rich (x=0.23) quantum wells induce the formation of a tail of states in the gap, where a continuum of localized exciton states forms. On the other hand, shallow quantum wells (x=0.11) exhibit sharp lines due to excitons localized at monolayer well-width fluctuations extending over a few hundred nanometers. The observed results are consistent with the occurrence of localized exciton lasing in deep ZnCdSe quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121738
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8349-8352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370622
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  • 8
    Electronic Resource
    Electronic Resource
    Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic force microscopy shows that the average diameter of InGaN QDs is as small as 8.4 nm. Next, we have investigated the dependence of the QDs properties on the growth conditions: the amount of InGaN deposited and the growth temperature. Moreover, we have investigated the optical property of InGaN QDs, so that the strong emission was seen at 2.86 eV at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123078
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  • 9
    Electronic Resource
    Electronic Resource
    Near-field magneto-optical spectroscopy of single self-assembled InAs quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 517-519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report observations of Zeeman spin splitting in photoluminescence from single InAs/GaAs self-assembled quantum dots (SAQDs) fabricated by Stranski–Krastanow growth. A low-temperature near-field optical microscope incorporating a superconducting magnet enabled us to resolve the luminescence from individual SAQDs. We have measured Zeeman split components from single SAQDs in magnetic fields up to 10 T. Circularly-polarized photoluminescence resolved carriers of different spin polarity. Dependence of the splitting on the QD structures was also investigated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121919
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of a single photoluminescence peak from a single quantum dot (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a very sharp photoluminescence peak from a single GaAs/AlGaAs quantum dot structure by using a microphotoluminescence measurement technique. The spectral linewidth was more suppressed by decreasing the excitation laser power, which is mainly due to reduction of the filling effect of quantized energy levels. The minimal spectral linewidth with low excitation laser power was 0.9 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114890
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