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Chemical bonding and structure of the sulfur treated GaAs(111)B surface (1995)

Moriarty, P. ; Murphy, B. ; Roberts, L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 383-385

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the atomic structure and chemical bonding present at sulfur exposed GaAs(111)B-(2×2) surfaces using both scanning tunneling microscopy (STM) and synchrotron radiation core-level photoemission. Exposure of the (2×2) surface to a molecular beam of sulfur leads to the appearance of a (1×1) low-energy electron diffraction pattern which becomes increasingly well defined as the sample is annealed. However, at no stage of the annealing process does the surface display an ordered (1×1) ideal termination. Both the photoemission data and STM images show that a large proportion of the As trimer units of the clean (2×2) surface remain after sulfur exposure and annealing to 450 °C with strong evidence of sulfur substituting for As in atomic layers below the surface. The effect of these reactions is to increase the surface band-bending from that of the clean (2×2) surface. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114636

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Electronic Band Structure of Monolayer Bi on GaP(110) (1995)

Whittle, R. ; Murphy, A. ; Dudzik, E. ; [et al.]

Chester : International Union of Crystallography (IUCr)

Journal of synchrotron radiation 2 (1995), S. 256-260

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ISSN: 1600-5775

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Geosciences , Physics

Notes: The two-dimensional electronic band structure of monolayer Bi on GaP(110) has been mapped using angle-resolved UV photoelectron spectroscopy (ARUPS) with synchrotron radiation. Surface photovoltage effects are corrected for by simultaneous second-order core spectroscopy. From valence-band spectra along the four symmetry directions of the surface Brillouin zone at three photon energies it is possible to distinguish three states as surface related. The topmost band is found to be inside the fundamental band gap, at ca 0.75 eV above the bulk valence-band maximum. Comparison with other V/III-V(110) systems shows that this system is not significantly different, despite the relatively large size of the Bi atoms with respect to the GaP lattice; in a selective comparison with InP and GaAs it would appear that Bi-substrate anion bonding is a more important factor than strain.