Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 383-385
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the atomic structure and chemical bonding present at sulfur exposed GaAs(111)B-(2×2) surfaces using both scanning tunneling microscopy (STM) and synchrotron radiation core-level photoemission. Exposure of the (2×2) surface to a molecular beam of sulfur leads to the appearance of a (1×1) low-energy electron diffraction pattern which becomes increasingly well defined as the sample is annealed. However, at no stage of the annealing process does the surface display an ordered (1×1) ideal termination. Both the photoemission data and STM images show that a large proportion of the As trimer units of the clean (2×2) surface remain after sulfur exposure and annealing to 450 °C with strong evidence of sulfur substituting for As in atomic layers below the surface. The effect of these reactions is to increase the surface band-bending from that of the clean (2×2) surface. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114636
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