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  • 1995-1999  (5)
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Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    A low-temperature dynamic mode scanning force microscope operating in high magnetic fields (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2765-2768 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A scanning force microscope was implemented operating at temperatures below 4.2 K and in magnetic fields up to 8 T. Piezoelectric quartz tuning forks were employed for nonoptical tip–sample distance control in the dynamic operation mode. Fast response was achieved by using a phase-locked loop for driving the mechanical oscillator. Possible applications of this setup for various scanning probe techniques are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149842
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2452-2454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125045
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 262-264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force microscope provides a novel method to define nanostructures and in-plane gates. Two examples, namely antidots and quantum point contacts as in-plane gate transistors have been fabricated and their performance at low temperatures is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121774
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Semiconductor quantum point contact fabricated by lithography with an atomic force microscope (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the experimental realization of a quantum point contact in a semiconductor heterostructure by lithography with an atomic force microscope (AFM). A thin, homogeneous titanium film on top of the chip surface was patterned by local anodic oxidation, induced by a current applied to an n-doped AFM tip. We demonstrate that self-aligned gate structures in the sub-micron regime can be fabricated with this technique. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120137
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Fabricating tunable semiconductor devices with an atomic force microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1134-1136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated quantum wires of different geometries in Ga[Al]As heterostructures by local oxidation of the semiconductor surface with an atomic force microscope. By magnetotransport measurements at low temperatures on these wires the electronic width is determined and compared to the geometrical width. An extremely small lateral depletion length of the order of 15 nm and a high specularity of the scattering at the confining walls is found. Furthermore, we demonstrate experimentally that these quantum wires can be tuned by a combination of in-plane gates and top gates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124620
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    Paper (German National Licenses)
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