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  • 1
    Electronic Resource
    Electronic Resource
    Clustering of GPI-Anchored Folate Receptor Independent of Both Cross-Linking and Association with Caveolin (1997)
    Springer
    The journal of membrane biology 159 (1997), S. 137 -147 
    Details
    ISSN: 1432-1424
    Keywords: Key words: Folate receptor — Caveolin — Caveolae — Folate transport — Glycosyl-phosphatidylinositol
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract. The distribution of the glycosyl-phosphatidylinositol (GPI)-anchored folate receptor (FR) in a diffuse pattern vs. functional clusters associated with caveolae has been debated. The equivocal nature of direct localization studies is due to possible experimental artifacts such as cross-linking of the protein by the antibody probes prior to fixation and alternatively the use of a disruptive fixation method. Such studies have also been complicated by the use of cells that vastly overexpress FR. In this study a monovalent probe, i.e., a biotinylated folate affinity analogue was used to covalently label FR. Cells expressing moderate levels of FR, i.e., JAR epithelial cells expressing FR-α and recombinant CHO fibroblasts expressing FR-β, were used. The affinity label and either caveolin or antigenic sites on FR were localized by electron microscopy using colloidal gold conjugated antibody probes post-embedding in the relatively permeable LR White resin. The method avoided both receptor cross-linking and early fixation steps and also enabled the use of transport permissive conditions while labeling FR at the cell surface. The results indicate that in steady-state FR is not significantly colocalized with caveolin. However, the receptor molecules occur predominantly in clusters, independent of cross-linking, providing a physical basis for the observed kinetics of receptor internalization and recycling during folate transport. Evidence is also presented to suggest that early mild fixation will disrupt the clustering of FR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002329900277
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  • 2
    Electronic Resource
    Electronic Resource
    The causes and prevention of rippling or localized delamination in fused garment parts (1997)
    Bingley : Emerald
    International journal of clothing science & technology 9 (1997), S. 228-235 
    Details
    ISSN: 0955-6222
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Examines the causes of rippling, localized delamination or surface distortion in fused garment theoretically and experimentally. On the basis of this study proposes a parameter, called rippling potential, to combine the effects of bond strength, differential shrinkage, compliance of outer fabrics and fusible interlinings and fabric formability on the degree of rippling. Suggests preventive measures to avoid rippling in fused garment parts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09556229710168360
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  • 3
    Electronic Resource
    Electronic Resource
    Towards the objective evaluation of garment appearance (1999)
    Bingley : Emerald
    International journal of clothing science & technology 11 (1999), S. 151-160 
    Details
    ISSN: 0955-6222
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: As a first step towards objective evaluation of garment appearance, the present work considered seams on three-dimensional surfaces which simulate actual garment surfaces. The geometric profiles of the 3-D seams were scanned using a laser scanner. 1-D and 2-D digital filters were applied to obtain pucker signals from the geometric profiles by removing "high frequency" components due to fabric surface texture and "low frequency" components due to garment silhouette and drape. The advantages and disadvantages of the 1-D and 2-D digital filters are compared. Four physical parameters are examined to see their relevance to the subjective pucker grade. It was found that log(s2), i.e. the logarithm of the variance of the heights of pucker signals, is the best set of physical parameters for the objective evaluation of seam pucker. In addition, latest attempts at capturing and analyzing 3D garment image using a Cyberware laser scanner and Surfacer software are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09556229910282370
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  • 4
    Electronic Resource
    Electronic Resource
    FORMATION OF RESISTANT STARCH DURING DEEP-FAT FRYING AND ITS ROLE IN MODIFYING MECHANICAL PROPERTIES OF FRIED PATTIES CONTAINING CORN, RICE, WHEAT, OR POTATO STARCH AND WATER (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food processing and preservation 22 (1998), S. 0 
    Details
    ISSN: 1745-4549
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Resistant starch (RS) was determined in patties (5.1 cm diameter, 1.27 cm high) prepared by mixing starch (corn, rice, wheat, or potato) in distilled water and immersion fried in canola oil (at 170 ± 3C). The RS content (expressed as % of total starch) in corn starch increased from 4.25 to 5.43% (±0.11) in the core region of a patty, whereas in the outer crust region the RS level was constant throughout the frying process. Similar trend was observed in potato, rice, and wheat starch patties. Upon varying the amylose content in the corn starch from 21 to 70%, the initial RS content (prior to frying) increased from 3.47 to 22.74 (±0.11%), following a linear relationship. Maximum force (MF) to puncture the crust of each starch patty was determined for frying duration of 3 to 15 min. Patties exhibiting higher RS content prior to frying, developed crusts with higher MF to puncture the crust, exhibiting a linear relationship between those two variables.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1745-4549.1998.tb00351.x
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  • 5
    Electronic Resource
    Electronic Resource
    Enhancement of conduction-band effective mass in III–V semiconductor alloys induced by chemical disorder (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6761-6765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction-band effective masses in InxGa1−xAs with a complete range of composition, and InAlGaAs and InGaAsP alloys covering the complete range of lattice matched to InP have been determined by far-infrared optically detected cyclotron resonance and magnetophotoconductivity measurements. It is found that the measured effective masses as a function of alloy composition are heavier than the values predicted from the five-band k⋅p theory. We show that this discrepancy can be resolved by including the effect of disorder-induced potential fluctuations that causes the wave function mixing between conduction and valence bands. We find that the strength of the potential fluctuations can be well described in terms of the Phillips electronegativity difference related to chemical disorder. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363804
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  • 6
    Electronic Resource
    Electronic Resource
    Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 664-670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of InGaAs/GaAs superlattices using a low-temperature-grown GaAs cap layer (LT-GaAs) by molecular beam epitaxy has been studied. The disordering of the superlattice was verified by photoluminescence and double-crystal x-ray rocking curve measurements. The Ga-vacancy-enhanced interdiffusion due to the presence of LT-GaAs was found to be the disordering mechanism. Diffusion equations and the Schrödinger's equation were solved numerically to obtain the composition profile and the transition energies in the disordered quantum well, respectively. The simulated energy shifts for samples under different annealing conditions agreed very well with the experimental results. The calculated effective diffusivity for the In–Ga interdiffusion has an activation energy of 1.63 eV, which is smaller than the activation energy 1.93 eV, for intrinsic interdiffusion. The diffusivity for the enhanced In–Ga interdiffusion due to the presence of LT-GaAs is about two orders of magnitude larger than the intrinsic In–Ga diffusivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360810
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  • 7
    Electronic Resource
    Electronic Resource
    Positive and negative persistent photoconductivities in semimetallic AlxGa1−xSb/InAs quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3152-3158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed investigation of the "positive" persistent photoconductivity (PPC) and "negative" persistent photoconductivity (NPPC) in semimetallic AlxGa1−xSb/InAs quantum wells. The studies of the NPPC and PPC effects have been performed under various conditions, such as different photon energy of excitation, different temperature, different Al composition x, and different well width. It is found that all the previously proposed mechanisms fail to explain several of our observations. We suggest that the NPPC and PPC effects are produced principally by two competing processes. At a high temperature, the photoconduction is dominated by the photogenerated electrons in the InAs well, in which the relaxation of the excess electrons is prohibited by an energy barrier due to the trapping of photoexcited holes by deep defects in the InAs well. As a result, the PPC is observed. At low temperature, electrons in the InAs layer are photoexcited into the local potential minima induced by compositional fluctuations at the AlGaSb and InAs interface, the number of electrons in the InAs well decreases, thus the NPPC occurs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371182
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  • 8
    Electronic Resource
    Electronic Resource
    Above-barrier states in GaAs–AlGaAs superlattices studied by photoconductivity and photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1460-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the quasibound states at the above-barrier region in AlGaAs–GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer does exist. It is also found that the barrier-width dependence of the above-barrier transition energies can be described quite well by the modified Messiah's calculation. However, the simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370965
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  • 9
    Electronic Resource
    Electronic Resource
    Photoconductivity in self-organized InAs quantum dots (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5351-5353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity in self-organized InAs/GaAs quantum dots is reported. It is found that the photoconductivity ratio between the InAs dots and GaAs matrix increases with increasing temperature. We point out that the photoconductivity of InAs dots can be attributed to the thermal activation of photocarriers into the GaAs matrix, where the conduction takes place. We also found that self-organized InAs dots exhibit the effect of persistent photoconductivity (PPC). The PPC effect is interpreted in terms of the spatial separation of photocreated electrons and holes. After photoexcitation, the hole remains in the dot, and the electron is thermally activated into the GaAs barrier. The return of the electron is prevented from the existence of band bending at the InAs dot and GaAs interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368787
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  • 10
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of epitaxial GaNxAs1−x on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3951-3953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaNxAs1−x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1−x on x for x≤2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124234
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