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  • 1
    Electronic Resource
    Electronic Resource
    A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 4616-4618 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new nucleation method, which is different from bias-enhanced nucleation, was employed for the preparation of (001)-oriented diamond films on untreated, mirror-polished silicon substrates. The nucleation was realized in an electron cyclotron resonance enhanced microwave plasma at a pressure of about 10−3 Torr which was 4 orders of magnitude lower than that normally used for bias-enhanced nucleation (∼tens Torr). Scanning electron microscopy and Raman spectroscopy were used to investigate the surface morphology and phase purity of the deposited diamond films. The new findings may provide us a route to further understand the nucleation mechanism of diamond films by chemical vapor deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478343
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  • 2
    Electronic Resource
    Electronic Resource
    Bit-shift performance investigations at different skew angles and for different media orientations : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5649-5651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bit-shift performance was investigated at different skew angles and for media with different orientation. Results indicate that the bit-shift value increases as the skew angle increases for both planar orientated media and near-isotropic media. As the skew angle increases, the off-track capability, described by the bit shift at different off-track distances, decreases and the bit-shift profile becomes asymmetric. Comparison of normalized bit-shift values (normalized according to the bit shift at 0° skew angle) shows that the bit shift of the near-isotropic media is not as sensitive to skew angle variation as the media with strong orientation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362270
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  • 3
    Electronic Resource
    Electronic Resource
    Inductive measurement of ultrafast magnetization dynamics in thin-film Permalloy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7849-7862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An inductive technique for the measurement of dynamical magnetic processes in thin-film materials is described. The technique is demonstrated using 50 nm films of Permalloy (Ni81Fe19). Data are presented for impulse- and step-response experiments with the applied field pulse oriented in the plane of the film and transverse to the anisotropy axis. Rotation times as short as 200 ps and free oscillations of the magnetization after excitation are clearly observed. The oscillation frequency increases as the dc bias field parallel to the anisotropy axis increases as predicted by classical gyromagnetic theory. The data are fitted to the Landau–Lifshitz equation, and damping parameters are determined as a function of dc bias field. Damping for both impulse and step excitations exhibits a strong dependence on bias field. Damping for step excitations is characterized by an anomalous transient damping which rapidly increases at low dc bias field. Transformation of the data to the frequency domain reveals a higher order precessional mode which is also preferentially excited at low dc bias fields. A possible source for both phenomena is precessional mode saturation for large peak rotations. The technique has the potential for 20 ps resolution, although only 120 ps resolution is demonstrated due to the limited bandwidth of the waveguides used. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370596
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  • 4
    Electronic Resource
    Electronic Resource
    Morphology of Si nanowires synthesized by high-temperature laser ablation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7981-7983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanowires have been synthesized by laser ablation of Si powder targets at 1200 °C. Transmission electron microscopy study showed that most Si nanowires had smooth surfaces and nearly the same diameter of about 16 nm. Beside the most abundant smooth-surface nanowires, four other forms of nanowires, named spring-shaped, fishbone-shaped, frog-egg-shaped, and necklace-shaped nanowires, were observed. The formation of nanowires into different shapes was explained by the two-step growth model based on the vapor–liquid–solid mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369389
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  • 5
    Electronic Resource
    Electronic Resource
    Oriented diamond growth on silicon (111) using a solid carbon source (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4187-4192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Textured diamond films have been grown on silicon (111) substrate by using hot filament chemical vapor deposition. A graphite plate immersed in hydrogen was used as the carbon source rather than the conventional gaseous methane source. During the nucleation period, a negative bias relative to the filaments was applied to the substrate. An epitaxial β-SiC layer was deposited during the bias treatment. Textured diamond film was subsequently grown on the β-SiC layer from the mixture of hydrogen and hydrocarbon species etched from the graphite. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367173
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  • 6
    Electronic Resource
    Electronic Resource
    Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5859-5861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we present a study of tip artifacts in atomic force microscope images of nanometer-scale cellular structures created on germanium surfaces by ion bombardment. It is demonstrated that the appearance of a columnar/granular morphology is due to severe image distortion when the tip size is comparable with the mean cell/hole diameter. These tip artifacts can often be deconvoluted by inverting the image and the lateral extension of the cell/hole can be reproduced with reasonable accuracy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366454
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  • 7
    Electronic Resource
    Electronic Resource
    New method to predict the magnetic properties of thin gauged Si–Fe sheets : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6483-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367702
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  • 8
    Electronic Resource
    Electronic Resource
    SiO2-enhanced synthesis of Si nanowires by laser ablation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3902-3904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si nanowires with uniform size have been synthesized by laser ablation of highly pure Si powder targets mixed with SiO2. A bulk quantity of Si nanowires was successfully obtained by mixing 30%–70% of SiO2 into the Si powder target. SiO2 played a crucial role in enhancing the formation and growth of the Si nanowires. The morphology and microstructure of the Si nanowire tips have been systematically characterized by means of high-resolution transmission electron microscopy. No evidence of metal was found at the tips. The results suggest that Si oxide is more important than metal in catalyzing the formation of Si nanowires. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122930
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon nanowires prepared by laser ablation at high temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121199
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron nitride nanotubes (BN-NTs) were synthesized by using excimer laser ablation at 1200 °C in different carrier gases. The main characteristic of the BN-NTs produced by this method is that nanotubes are of only one to three atomic layers thick, which could be attributed to the dominance of the axial growth rate over the radial growth rate. The diameter of the BN-NTs ranged from 1.5 to 8 nm. The tips of the BN-NTs are either a flat cap or of polygonal termination, in contrast to the conical ends of carbon nanotubes. The atomic ratio of boron to nitrogen as measured by means of parallel electron energy loss spectroscopy is 0.8, which is within the experimental error of the stoichiometry of hexagonal BN structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121236
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