Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Plasma diagnostics in pulsed laser TiN layer deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2928-2936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time- and space-resolved emission and laser-induced fluorescence spectroscopic measurements were performed to investigate vaporization and plasma formation resulting from excimer laser irradiation of titanium targets in a low-pressure nitrogen atmosphere. Measurement series have been done by varying the laser intensity from the vaporization threshold at 25 MW cm−2 up to values of about 500 MW cm−2 typically applied in pulsed laser deposition processing of titanium nitride films. Thus, the transition from thermal evaporation to the high-density plasma formation process, leading to the production of reactive species and high-energy ions, was evidenced. An interesting result for the comprehension of the reactive deposition process was the observation of a quantity of dissociated and ionized nitrogen, which is transported with the plasma front in the direction of the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358708
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characteristic features of the laser radiation–target interactions during reactive pulsed laser ablation of Si targets in ammonia (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7123-7128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed electron microscopy studies of targets subjected to the multipulse laser irradiation in the regime characteristic of reactive pulsed laser deposition from bulk Si in low-pressure ammonia. Experimental evidence is provided concerning the expulsion of liquid droplets from the crater that forms on the target surface. In our opinion, the main mechanisms responsible for droplets spraying directly from the crater are in this case liquid phase expulsion, under the action of the recoil pressure of the ablated substance and hydrodynamic instabilities at the target surface. Cracks of various sizes and orientations have been observed beneath the crater surface. These cracks might cause an increase in the ablation and deposition rates with time. A qualitative theoretical model was developed to account for crack formation based on the peculiar behavior of Si, which has a smaller density in bulk than in liquid phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371801
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Laser-reactive ablation deposition of silicon-nitride films (1995)
    Springer
    Applied physics 60 (1995), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 42.55.Gp ; 68.55 ; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538403
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Laser reactive ablation deposition of silicon-nitride films (1995)
    Springer
    Applied physics 60 (1995), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 42.55.Gp; 68.55; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Silicon-nitride films were deposited on silicon wafers by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05 – 5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 µm were obtained under specific experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538403
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A parametric study of the deposition of the TiN thin films by laser reactive ablation of titanium targets in nitrogen: the roles of the total gas pressure and the contaminations with oxides (1996)
    Springer
    Journal of materials science 31 (1996), S. 2909-2915 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The multipulse excimer laser-reactive ablation of a titanium target in nitrogen has been found to result in a total pressure of the ambient gas in the range 7–70 μbar, in the deposition on to a silicon collector surface of high-purity f c c TiN thin films. These films were hard and adherent to substrate. The deposition rate was 0.03–0.05 nm per pulse for an incident laser fluence of ≥5 J cm−2. For a lower gas pressure of a few microbars the deposits were amorphized with an excess of titanium. For a nitrogen pressure larger than 100 μbar, the layers were contaminated with oxides. The oxides became more abundant with further increase in the gas pressure, and the deposited layer consisted of oxides only when the pressure reached several millibars.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00356001
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of silicon nitride thin films by laser ablation of a Si target in low pressure ammonia (1996)
    Springer
    Journal of materials science 31 (1996), S. 2839-2847 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We report the deposition of Si-N films by multipulse excimer laser (λ = 308 nm, τFWHM = 30 ns) ablation of Si wafers placed in a slow flow of NH3 in the pressure range (1 μbar-1 mbar). The films are deposited on to a Si collector placed parallel to the Si target. We succeeded in depositing pure amorphous Si3N4 films at a pressure of 1 mbar of NH3. The deposition rate reached a maximum value of 0.2–0.3 nm per pulse. At lower pressures, the deposited films consist of a fine mixture of three amorphous phases (amorphous stoichiometric silicon nitride, amorphous non-stoichiometric silicon nitride and amorphous silicon). The amorphous silicon is prevalent in films deposited at a pressure of several to several tens of μbars. Droplets of polycrystalline α-Si are sometimes visible on the film surface. The experimental evidence, is analysed with a view to elucidating the participation in the chemical synthesis of the three main stages of the process: the substance expulsion from the target by laser ablation, the transition through the gas of the expulsed substance and it's final impact on the collector. We conclude that silicon nitride is mostly synthesized during the impact on the collector of the flow of the ablated substance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00355991
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...