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  • 1995-1999  (3)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Identification of two patterns in magnetic force microscopy of shape memory alloys (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we report on the observation of two coexisting patterns in magnetic force microscopy (MFM) images of shape memory alloys. The MFM signal of both patterns presents similar behavior with tip–surface separation. An investigation on the origin of these patterns presents strong evidence that both are of magnetic nature only and, furthermore, can be assigned as bulk and surface-related, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123767
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1712-1714 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present an atomic force microscopy study of a series of Te-mediated InAs/GaAs samples with InAs coverage ranging from 1.5 to 3 monolayers. We were able to directly identify the growth mode transition and the mechanism of relaxed island formation. At the limit of coherent growth mode, strained quantum dots aggregate, forming twin quantum dots (TQDs), which are structures of two, or more, dots virtually bonded together, separated by less than 3 nm. The onset of the incoherent mode is then unambiguously characterized by the coalescence of individual TQDs forming initially small, and then larger, relaxed islands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121160
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-induced persistent photoconductivity in resonant tunneling devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of a novel effect in resonant tunneling devices (RTD): a self-induced persistent photoconductivity (SIPPC). The SIPPC manifests itself as a permanent shift of the resonant peak position to lower voltages, which is induced by the RTD itself and not by external sources. The SIPPC is due to the presence of DX centers in the device, which are ionized by light generated in the device itself through the recombination of electron-hole pairs created by impact ionization of hot electrons in the depletion layer of the device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117079
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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