Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (3)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of defects induced in silicon by SF6/O2 reactive-ion etching (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3348-3352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) studies of SF6/O2 plasma-induced defect formation in n-type silicon samples are reported. Ion bombardment of the silicon surface during the SF6 reactive-ion etching (RIE) is shown to introduce defects giving rise to a broad PL band in the 0.70–1.00 eV spectral range and to the carbon-related C and G lines. The role of oxygen during SF6/O2 RIE on the photoluminescence observed is analyzed. It is argued that oxygen contamination enhances the formation of PL centers via the creation of extended defects, such as oxygen precipitates. A lattice contraction nearby these extended defects is suggested to be responsible for the observed splitting of the C and G lines as well as the shift of the phosphorous bound exciton line detected after SF6/O2 RIE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360711
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The slowdown of the oxide etch rate with width of submicrometer structures is known as reactive ion etching (RIE) lag and has been explained by ion shadowing and differential charging of the sidewalls, among other effects [R. A. Gottscho and co-workers, J. Vac. Sci. Technol. B 10, 2133 (1992)]. Here we show for an inductively coupled high density plasma reactor working in the pressure regime from 6 to 20 mTorr that inverse RIE lag is primarily observed, i.e., the etch rates increase as the width of the microstructures decrease. Inverse RIE lag, which was first discussed by Vitkavage et al. [Tegal Plasma Proceedings Symposium, San Francisco, 1991 (unpublished)], may be explained by considering the neutral flux distribution at the structure bottom. The neutral flux has a stronger dependence on the aspect ratio than the ion flux due to its isotropic velocity distribution. The neutral flux distribution has been modeled and is consistent with etching profiles observed at high pressure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116772
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2634-2636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By comparing the etching characteristics of silicon and silicon nitride in CF4/O2/N2 microwave downstream plasmas we demonstrate clearly how low concentrations of energetic species can play a dominant role in remote plasma processing: Injection of 5% N2 to a CF4/O2 plasma increases the silicon nitride etch rate by a factor of 7, while not significantly affecting the bulk composition of the discharge. Downstream injection of N2 is ineffective. Using surface spectroscopies we directly show a dramatic enhancement of the reactivity of fluorine and oxygen atoms with silicon and silicon–nitride surfaces upon N2 injection to the discharge. Our results can be explained by the production of energetic metastable species in the discharge region which transport energy to the gas-surface interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113108
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...