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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3439-3444 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic process of subsurface altered layer formation in a Cu-Pt alloy under Ar+ ion bombardment has been studied by sequential Auger electron spectroscopy (AES) and ion scattering spectroscopy (ISS) measurements. For this study, we recently developed a compact coevaporator, which enables Cu and Pt to be deposited at a constant composition ratio (within ±3 at. %) onto a Si substrate cooled to liquid-nitrogen temperature. The average surface composition of the alloy film was monitored by AES throughout the deposition procedure, and the composition of the topmost atomic layer was measured by ISS right after the end of the film deposition. The data show that the topmost atomic layer was considerably Cu-rich while subsurface atomic layers were of constant composition. During Ar+ ion bombardment, however, the surface composition of Cu, measured by sequential AES and ISS, gradually decreased with time toward a steady-state value. The temporal evolution of the composition profile is described. The surface-segregation constant and radiation-enhanced diffusion coefficient for the Cu-Pt alloy under Ar+ ion bombardment are inferred from the measured composition profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4231-4237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effective energy-loss functions were derived for oxygen-adsorbed amorphous silicon surfaces from a reflection electron energy-loss spectroscopy analysis based on the extended Landau theory. This study has revealed that the intensity of the surface-plasmon-loss peak for a clean surface decreases and its peak position shifts towards the lower-energy losses as oxygen exposure proceeds (≤1000 L). To understand the above behavior of the surface-plasmon-loss peak, the distribution of the energy losses was calculated using the hydrodynamic model. The decrease and shift of the surface-plasmon-loss peak has been described with considerable success by assuming that the quasifree static electron density in the vicinity of the silicon surface decreases as oxygen adsorption proceeds owing to oxygen's high electron affinity. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2070-2072 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect structures in a homoepitaxial diamond film grown by chemical vapor deposition have been studied by cross-sectional transmission electron microscopy. Many interstitial dislocation loops are discerned in the (001) interface. The internal region grown on the (11¯1) facet comprises stacking faults and twins, while that on the (001) face contains mainly interstitial dislocation loops aligned in rows along ∼〈112〉 directions. Fe and Si impurities were detected only at the interface by analytical electron microscopy. The origin of the defects is briefly discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 632-634 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isolated diamond particles grown by chemical vapor deposition on a mirror-polished Si substrate have been studied by cross-sectional transmission electron microscopy. Focused ion beam micromachining enabled the cross-sectional specimen to be carved out precisely at the center of the particle. Atomic scale observation of the diamond/Si interface revealed the presence of an ∼3 nm thick amorphous intermediate layer including a few pits around the nucleation site of the particle. Growth mechanism and relationship between growth orientation and internal defect structure of the diamond particle are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of mathematical sciences 93 (1999), S. 600-608 
    ISSN: 1573-8795
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract Let F(x) be a distribution function of of a scale mixture X=SZ of a random variable Z with distribution G and scale factor S, which is a positive random variable independent of Z. Some nonuniform bounds are given for asymptotic expansions of F(x) around G(x)_ under mild moment conditions on the distribution of S. Some nonuniform bounds for the normal approximation to the Student t-distribution are given as examples.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 351-362 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have studied the effect of elastic scattering and analyser geometry on calculations of electron escape depths. A theoretical analysis of the electron escape depth has been presented that shows how it is related to the solid angle for detection and the geometrical configuration of a cylindrical mirror analyser. To estimate the extent to which elastic scattering can modify the values of the escape depth, Monte Carlo simulations of the emission of Auger electrons were carried out for Cu MVV (59 eV), Cu LMM (916 eV), Au NVV (238 eV) and Au MNN (2025 eV) signals. From the calculated depth distributions of signal electrons, we have derived a correction factor for the electron escape depth in terms of the corresponding inelastic mean free path which includes both the effects of elastic scattering and analyser geometry. We have found that elastic scattering reduces the value of the escape depth by several tens of per cent and, depending on the target, signal electron energy and analyser geometry, the ration between the escape depth and the inelastic mean free path varies from 0.4 to 0.6.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 860-868 
    ISSN: 0142-2421
    Keywords: ISO/TC 201 on Surface Chemical Analysis ; standards ; surface analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A summary is given of the organization and work of Technical Committee 201 on Surface Chemical Analysis of the International Organization for Standardization (ISO). Twelve potential international standards are currently in various stages of development and a further thirteen standards are expected to be developed shortly. Information is also given on expected future needs for standards with examples from a recent survey of experts in Auger electron spectroscopy and x-ray photoelectron spectroscopy. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 14 Tab.
    Type of Medium: Electronic Resource
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