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  • 1995-1999  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 66 (1998), S. S777 
    ISSN: 1432-0630
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 , CO2, H2O or C2H5OH mixed with nitrogen gas; H2–Ar2 mixture) were applied in this study. Only the presence of ethanol vapour or water vapour helped to produce nano-holes when positive voltage pulse were superimposed on the sample. Furthermore, the existence of the critical vapour pressure of H2O or C2H5OH in the box was important in the modification of the gold surface and the etching process had an unitary rate when above critical vapour pressure. The linear relationship between the hole surface and the pulse duration was observed. We suggest that an anodic oxidation process of the gold surface under a voltage pulse and a place-exchange mechanism, involving the lifting of gold atoms in the surface monolayer, are relevant in nano-hole formation on the gold surface with STM. This process assisted by atom diffusion, due to the electric field built between the tip and the sample during the voltage pulse, explains the exceptional nano-hole geometry.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Np; 68.35.Bs; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: ° to 2° towards 〈111〉) using ex-situ atomic force microscopy (AFM) under dry nitrogen gas. After growth, the statistical distribution of the terrace width and the correlation length along the steps were consistent with a thermodynamic equilibrium model taking into account an AL-2 step–step interaction. These observations are qualitatively similar to Si and metals after thermal annealing but, in addition to elastic interaction, the dipole–dipole contribution has to be considered in order to explain the large value of the coefficient A (AGa=1.5 eVÅ) deduced for the force coefficient between the gallium terminated steps. Step bunching occurred for highly Si-doped GaAs growth and we discuss the best method for carrying out the measurements in order to determine the step–step interaction.
    Type of Medium: Electronic Resource
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