Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 121-123 (Mar. 2007), p. 835-838
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negativedifferential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra(STS) measurement. The origin of the NDR was found to be the voltage dependence of thetransmission coefficient through the double tunneling barrier, a phenomenon similar to that reportedby Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.835.pdf
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