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  • 1
    Electronic Resource
    Electronic Resource
    Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 141-147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the impact of quantum confinement and strain effects on the optical properties of state-of-the-art, densely stacked, In0.15Ga0.85As/GaAs V-groove quantum wires. High uniformity and efficient carrier capture lead to narrow (6 meV) and intense emission from the wires. Large optical polarization anisotropy is obtained thanks to the combined effects of lateral quantum confinement and triaxial strain. Band filling in the fundamental subband occurs at a modest carrier density (∼9×105 cm−1), and is accompanied by a small spectral blueshift of the emission. Several sharp excitonic resonances associated with two dimensionally confined subbands of dominant heavy-hole character are observed in photoluminescence excitation spectroscopy, together with a remarkably small Stokes shift (3 meV). The subband separations (∼24 meV) are nearly independent of the wire thickness, as the nonuniform Indium composition across the structure is found to dominate the lateral confinement for thick wires. Such strained quantum wires are promising for the realization of advanced nanostructure devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373634
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  • 2
    Electronic Resource
    Electronic Resource
    Wide-range tuning of the two-dimensional confinement in V-groove quantum wires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 274-276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how and to what extent the one-dimensional (1D) subband separation of V-groove GaAs/AlGaAs quantum wires (QWRs) can be tuned in a controlled way without compromising the wire uniformity and interface quality. Our results demonstrate that high quality V-groove QWRs with subbands separation up to ∼3kBTroom (ΔE=80 meV) can be obtained. The ratio between the subband separation and the inhomogeneous broadening of the QWRs emission line, extracted from low-temperature photoluminescence and photoluminescence excitation spectra, is as large as 7.1. Finally, we show that the 1D features in the optical spectra are maintained up to 300 K, making these QWRs suitable for room temperature device application. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492847
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of indium segregation on optical properties of V-groove InGaAs/GaAs strained quantum wires (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3300-3302 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. The lateral patterning of these nonplanar heterostructures allows the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum-well structure with In-enriched composition. We studied in detail the influence of nominal thickness and In content on the photoluminescence peak energy of these quantum wires. Room-temperature emission at 1.16 μm with a relatively narrow linewidth (30–35 meV) is achieved as a demonstration of the potential of this approach for fabricating long-wavelength semiconductor light sources on GaAs substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125331
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  • 4
    Electronic Resource
    Electronic Resource
    Ex-situ atomic force microscopy studies of vicinal surfaces GaAs(001) grown by molecular beam epitaxy (1998)
    Springer
    Applied physics 66 (1998), S. 1089-1093 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Np; 68.35.Bs; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: ° to 2° towards 〈111〉) using ex-situ atomic force microscopy (AFM) under dry nitrogen gas. After growth, the statistical distribution of the terrace width and the correlation length along the steps were consistent with a thermodynamic equilibrium model taking into account an AL-2 step–step interaction. These observations are qualitatively similar to Si and metals after thermal annealing but, in addition to elastic interaction, the dipole–dipole contribution has to be considered in order to explain the large value of the coefficient A (AGa=1.5 eVÅ) deduced for the force coefficient between the gallium terminated steps. Step bunching occurred for highly Si-doped GaAs growth and we discuss the best method for carrying out the measurements in order to determine the step–step interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051303
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation at cleaved surfaces studied by atomic force microscopy (1999)
    Springer
    Applied physics 69 (1999), S. 347-351 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.66.Fd; 62.20.Fe; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Atomic force microscopy (AFM) in air is used to study the (110) cleaved surface of strained (100) InxGa1-xAs/ InP heterostructures for different compositions and thicknesses of the ternary compound layers. We find that the elastic strain relaxation induces a surface undulation of a few Å amplitude, even for very small misfits, provided the layers are thick enough. Using finite-element calculations of the strain relaxation near the cleaved edge, we reproduce quantitatively the AFM observations for compressive- as well as for tensile-strained layers with an accuracy better than 0.1 nm. This demonstrates the ability of AFM to quantify strain distributions by making use of surface profile measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051012
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