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  • 1995-1999  (12)
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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of epitaxial InAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6416-6424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence studies as well as reflectance and transmittance measurements were performed on high-purity epitaxial InAs grown by metal-organic chemical-vapor deposition. We report the optical identification of excitonic, donor, and acceptor impurity related transitions at a temperature of 1.4 K. Measurements at higher temperature and in the presence of magnetic fields up to 7 T support these identifications. We find the excitonic band gap at 415.65±0.01 meV according to the minimum in the polariton reflectance feature. The donor–acceptor-pair and acceptor-bound exciton transitions for three different acceptors are observed by photoluminescence, and we tentatively associate one of them to a double acceptor formed by a Ga impurity on an As lattice site. A donor-bound exciton transition is observed with a binding energy of 0.42 meV. The magnetic field dependence yields values of the electron effective mass and g factor of (0.026±0.002)m0 and −15.3±0.2, respectively, in good agreement with values obtained by other techniques. Furthermore, we report a deep luminescence band of unknown origin at ∼375 meV, related to drastic temporal changes in the band-edge photoluminescence intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363660
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  • 2
    Electronic Resource
    Electronic Resource
    In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single monolayers of InAs in GaAs and GaAs in InAs have been grown by atomic layer epitaxy (ALE) at 50 Torr. In situ reflectance difference spectroscopy monitoring of the surface during each stage of the growth showed a strong asymmetry in the surface behavior between the two systems. Following insertion of an InAs monolayer in GaAs, approximately 20 ML of GaAs are required to recover an In-free, As-stabilized GaAs surface at 390 °C. On the other hand, following the insertion of 1 ML of GaAs in InAs, the spectrum returns to a Ga-free, As-stabilized InAs surface after only 1 ML of InAs deposition. This behavior shows clear evidence of the presence of segregation caused by thermodynamic factors even at the very low growth temperatures used for ALE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114944
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  • 3
    Electronic Resource
    Electronic Resource
    Growth mechanisms in atomic layer epitaxy of GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3390-3397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the different mechanisms governing the growth of GaAs by atomic layer epitaxy (ALE). The gallium precursors such as trimethylgallium (TMGa), triethylgallium (TEGa), and trisneopentylgallium (TNPGa) were characterized and compared during ALE by in situ reflectance difference spectroscopy (RDS). A fundamental difference is observed in the RDS behavior after the alkyl exposure between self-limiting and non-self-limiting precursors. A transient is observed during the purge following alkyl exposure for both self-limiting sources, (TMGa and TNPGa), and is absent with TEGa. This is attributed to the presence of methyl radicals when using self-limiting precursors. Atomic force microscopy measurements of the surface morphology show that a non-self-limiting surface prepared with TEGa has droplets forming on it. In contrast, TMGa and TNPGa show well-defined terraces without droplets. RDS real-time measurements show that Ga incorporating on the c(4×4) surface first reacts with the As in the top layer with a process involving both desorption of As and rearrangement of the remaining top As. We used these measurements to provide a detailed structural model of the process of Ga incorporation, and thus, solve the problem of how an As-rich surface with more than 1 ML coverage can yield 1 ML of material per ALE cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367137
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  • 4
    Electronic Resource
    Electronic Resource
    Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6305-6311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in the lattice parameters of commercially available undoped and Si-doped GaAs substrates have been studied using high resolution photoluminescence (PL) spectroscopy. The lattice parameter difference between high quality epitaxial layers of GaAs and the doped substrates upon which they are grown induces a biaxial strain in the epitaxial layer which can be detected with remarkable sensitivity using low temperature PL. The PL results show that a lattice mismatch as low as 0.0013% can cause significant and well-resolved changes in the features of donor (D°X) and acceptor (A°X) bound exciton spectra, which are consistent with results obtained from samples subjected to externally applied biaxial stress. In addition to studying a variety of low lattice mismatch GaAs/GaAs:Si heterostructures, the technique is also successfully employed in the case of more highly strained GaAs grown on an In0.004Ga0.996As substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368953
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  • 5
    Electronic Resource
    Electronic Resource
    High resolution spectroscopy of free-standing GaAs films prepared by epitaxial liftoff (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5772-5775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-standing layers of high purity GaAs prepared by epitaxial liftoff are investigated using high resolution photoluminescence, optical transmission, and x-ray diffraction techniques. Low temperature (1.5 K) optical measurements of these thin, strain-free films yield spectra rich in structure, revealing much about the fundamental properties of the materials. X-ray diffraction analysis of layers as thin as 2000 Å produce well-resolved Pendellösung fringes, in excellent agreement with dynamical theory simulations. Once removed from their underlying substrates, these thin semiconductor cavities constitute unique systems for a variety of novel spectroscopic studies not possible in as-grown heterostructures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368842
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of interfacial dopant layer on transport properties of high purity InP (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1960-1962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall measurements were used to investigate the role of unintentional interfacial dopant layers on the electrical properties of high purity InP. Secondary ion mass spectroscopy was used to measure the level of Si contamination present in several samples at the substrate-epilayer interface. We show that the presence of interfacial dopant gives rise to two layer conduction whose temperature dependence mimics the freezeout behavior expected for a deep donor. However, the magnetic field dependence of the Hall data at low temperatures shows the expected behavior for the two layer model, including an order of magnitude variation in the apparent sheet concentration and Hall mobility over the range from 0.1 to 0.6 T at 77 K. We show that the true bulk mobility and carrier concentration can be accurately determined in samples with high interfacial contamination by performing Hall measurements at several magnetic fields at 77 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115639
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  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and characterization of high-quality InP/GaAs0.5Sb0.5/InP heterostructures and their application to double-heterojunction bipolar transistors (DHBT). The GaAs0.5Sb0.5 layer quality was evaluated by high-resolution x-ray diffraction (XRD), low-temperature photoluminescence (PL), and atomic force microscopy (AFM). The observed 4.2 K PL linewidth was 7.7 meV and XRD rocking curves matched those of dynamical scattering simulations. In contrast to previously reported InP/GaAs0.5Sb0.5/InP DHBTs, the present devices show nearly ideal base and collector currents, low turn-on and collector offset voltages, and a high current gain. Self-aligned DHBTs exhibit a cutoff frequency over 75 GHz and common-emitter current gain greater than 100 at 300 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123428
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  • 8
    Electronic Resource
    Electronic Resource
    Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2799-2801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of lattice-matched GaAsSb/InGaAs/InP heterostructures with a varying InGaAs layer thickness (0–900 Å) were investigated. These structures display strong low temperature type II luminescence, the energy of which varies with the InGaAs layer thickness and ranges from 0.453 to 0.63 eV. The type II luminescence was used to determine directly and accurately the conduction band offset of these structures. The values obtained herein are 0.36 and 0.18 eV at 4.2 K for the GaAsSb/InGaAs and GaAsSb/InP heterojunctions, respectively, with the GaAsSb conduction band higher in energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122594
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  • 9
    Electronic Resource
    Electronic Resource
    Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3275-3277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dramatic enhancements of over 300× in the room temperature photoluminescence signal obtained from high purity GaAs epitaxial layers were recorded after a brief heat treatment in tertiarybutylphosphine vapor. Low temperature photoluminescence spectra indicate that, unlike other passivation techniques, the surface layer formed during this simple treatment does not induce any appreciable strain on the underlying epilayer. The increases in photoluminescence intensity are indicative of a reduction in surface recombination brought about by the formation of a very thin GaP layer that protects against surface oxidation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118426
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  • 10
    Electronic Resource
    Electronic Resource
    Sharp excitonic photoluminescence from epitaxial InAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optically excited luminescence of epitaxial InAs has been studied at 1.4 K, revealing well-resolved emission lines identified as the exciton–polariton, neutral–acceptor–bound exciton principal and two-hole transitions, donor–acceptor pair band, and phonon assisted transitions. These features are seen in samples of high purity InAs grown by metalorganic chemical vapor deposition on InAs substrates using tertiarybutylarsine and trimethylindium. Only one acceptor species is observed, having a 1 S3/2–2 S3/2 transition energy of 13.39±0.01 meV, and an acceptor–bound exciton binding energy of 2.11±0.03 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113825
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