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  • 1995-1999  (14)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Electrical transport properties of epitaxial BaTiO3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 969-977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are reported. Electrical resistivity and thermoelectric power were measured over the temperature range of 77–300 K. Room temperature resistivities of the as-deposited, undoped films range from 105 to 108 Ω cm, while values as low as 55 Ω cm are obtained for the La-doped films. The resistivity shows an activated temperature dependence with the measured activation energies ranging between 0.11 and 0.50 eV. The activation energy depends strongly upon the thin film carrier concentration. Thermoelectric power measurements indicate that the films are n-type. The Seebeck coefficient for La-doped BaTiO3 exhibits metallike behavior, with its magnitude directly proportional to temperature. Temperature dependent resistivity and thermopower measurements indicate that the carrier mobility is activated. A transport model is proposed whereby conduction occurs in the La-doped films via hopping between localized states within a pseudogap formed between a lower Hubbard band and the BaTiO3 conduction band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362909
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamic response of the electro-optic effect in epitaxial KNbO3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2707-2709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic response of the electro-optic coefficient of epitaxial KNbO3 thin films was measured at room temperature. The effective electro-optic coefficient for these films at 100 kHz is 12 pm/V. The magnitude of the electro-optic response increased by seventy percent as the duration of the applied field was increased from 10 ns to 10 μs. A dispersion of the electro-optic coefficient is observed which follows a power law given by Atm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125123
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  • 3
    Electronic Resource
    Electronic Resource
    Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1783-1785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a thin-film channel waveguide electro-optic modulator fabricated in epitaxial BaTiO3 on MgO. Films had an effective dc electro-optic coefficient of reff∼50±5 pm/V and reff∼18±2 pm/V at 5 MHz for λ∼1.55 μm light. Extinction ratios of 14 dB were obtained. The electro-optic effect decreases to ∼60% of the dc value at 1 Hz, 50% of the dc value at 20 kHz, and ∼37% of the dc value at 5 MHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119397
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  • 4
    Electronic Resource
    Electronic Resource
    Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgO (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2968-2970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2-μm-thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly increase waveguide throughput. Throughputs of up to 10.4% were measured in 15 nm ridge waveguides which were 2.85 mm long and coated with spin on glass. Waveguide throughput is found to increase significantly with an increase in wavelength from 1.06 to 1.55 μm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117746
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of (Sr1−xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-pure epitaxial (Sr1−xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0–0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 °C and 750 °C, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117632
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  • 6
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1726-1728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured strontium barium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition. [001]-oriented strontium barium niobate films on single crystal (100) magnesium oxide substrates were obtained at a growth temperature of 800 °C. Second-harmonic generation of 1.064 μm incident light was measured on the thin films. The nonlinear optical susceptibility of the films was as high as 8.7 times that of quartz (∼3.0 pm/V), which is comparable to the bulk value. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113347
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of enhanced photoluminescence in erbium-doped semiconductor microdisk resonator (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2843-2845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results from an erbium-doped gallium phosphide microdisk resonator pumped by a Ti-sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra-4f-shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium-doped gallium phosphide microdisks is an order stronger than that from a thin film sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113448
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3298-3300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2⋅tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810 °C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10−4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113736
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescent properties of Er-doped GaP deposited on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 518-520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12–300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115174
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  • 10
    Electronic Resource
    Electronic Resource
    Dielectric properties of epitaxial BaTiO3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2248-2250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric response of epitaxial BaTiO3 thin films deposited on MgO was measured through surface electrodes as a function of applied bias, frequency, and temperature. The room temperature value of the dielectric constant was ∼500 with a dissipation factor, tan(δ), of 0.05 at 100 kHz. Measurements varying the bias field showed hysteresis of the dielectric response and a tunability of 30% for a maximum applied field of ∼7 MV/m. The frequency response of the dielectric constant is well described by a Curie–von Schweidler power law with an exponent ∼0.04 in the range 1 kHz–13 MHz. The films undergo a diffuse phase transition at temperatures higher than the bulk Curie temperature. The behavior of the dielectric response is attributed to the presence of residual strain in the epitaxial thin films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121691
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