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  • Artikel: DFG Deutsche Nationallizenzen  (6)
  • 1990-1994  (6)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (6)
Materialart
Erscheinungszeitraum
  • 1990-1994  (6)
Jahr
  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic properties of epitaxial FexSi1−x films on Si(111) have been determined by means of ferromagnetic resonance (FMR) and Brillouin light scattering (BLS). The investigated films are (111) oriented, with thicknesses h=150 A(ring), 250 A(ring), 710 A(ring), and Fe concentrations x=0.75, 0.79, and 0.75, respectively. All experiments have been carried out at room temperature. For BLS, the frequencies of both surface and bulk magnons have been measured as a function of the external in plane field H and the in plane direction of magnon propagation versus the main crystallographic axis. Moreover, the wave vector dependence has been used to identify the surface and bulk magnons present in the thicker films. FMR has been used in the parallel configuration (PC) and normal configuration (NC), where the external applied field lies in the sample plane and normal to the sample, respectively. Several waveguide setups were used to cover the frequency range from 18 to 92 GHz. For the numerical analysis we used the resonance conditions for a thin single crystalline film grown in the (111) plane. From our fits we obtained for the Landé g value 2.1, for the saturation induction 4πMs=8.8 kG, 10.7 kG, 13.7 kG for h=150 A(ring), 710 A(ring), and 250 A(ring), respectively. The magnetic parameters have been found to depend strongly on the Fe concentrations and FexSi1−x-Si substrate interface interdiffusion. The magnetic parameters of epitaxial FexSi1−x films are in agreement with the data obtained from single crystals by Hines et al. The Landau–Lifshitz FMR relaxation constant is very small, ranging from 5 to 8×107 rad/s.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1968-1970 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxially stabilized films with the defect CsCl structure, that were grown by molecular beam epitaxy, have been studied by surface enhanced Raman scattering using a silver overlayer. We have observed that the defect-induced phonon density of states features in the Raman signal shift from 256 cm−1 for a coherently strained film to 263 cm−1 for a relaxed one. The lower energy observed for the former can qualitatively be explained by the expansive trigonal distortion arising from the misfit of −0.5%.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7256-7264 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A(ring). We used Rutherford backscattering spectrometry channeling techniques to measure the lattice distortion as a function of film thickness. The critical thickness hc corresponding to the film thickness at which strain relieving dislocations begin to appear was determined for CoSi2 on Si(111) and Si(001) as well as for Si on CoSi2(111). For CoSi2 on Si(001), a larger critical thickness was obtained than on Si(111), where hc is ∼45 A(ring). Epitaxial Si on CoSi2(111) was found to be under a compressive strain up to thicknesses of about 350 A(ring) depending on substrate misorientation. Strain measurements were also performed on epitaxially stabilized Co and Fe monosilicides with the CsCl structure. Channeling measurements on thick epitaxial films of bcc-Fe, Fe3Si, FeSi, and Fe0.5Si were used to determine the crystalline quality. Excellent channeling minimum yields of 4.0% were found for bcc-Fe/Si(111). The results are compared with structural information obtained from x-ray diffraction and Brillouin scattering spectroscopy. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3220-3236 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin epitaxial single-crystalline B-type CoSi2 films (twin-oriented) have been grown in ultrahigh vacuum by stoichiometric codeposition of Co and Si on slightly misoriented (0.1°–0.3°) Si(111) substrates. The microstructure as well as the nature of interfacial defects has been investigated in detail by transmission electron microscopy. The defect structure is found to depend closely on the initial deposition parameters, annealing temperature, and the topography of the Si substrate. It will be shown that even during the early stages of layer growth, loss of coherence is obtained and lattice strain already starts to occur with the introduction of misfit dislocations with Burgers vector b=a/2〈110〉 inclined to the interface or with Burgers vector b=a/6〈112〉 parallel to it. It is demonstrated that ultrathin CoSi2 films with thickness of about 1 nm grown on slightly misoriented substrates with parallel surface steps, exhibit quite different defect structures at annealing temperatures between 300 °C and 550 °C. Control of the dislocation density has been obtained by applying a two-step growth procedure. CoSi2 layers grown to a thickness 〈hc (4–5 nm) exhibit line defects with Burgers vector b=a/6〈112〉 associated with interfacial misorientation-related steps. Above this thickness additional dislocations in the three equivalent directions are formed, indicating biaxial strain relaxation. In addition, calculations of the critical thickness hc of biaxial strain relaxation based on thermodynamic equilibrium theory are presented. It is shown that the observed critical thickness hc is in qualitative agreement with theoretical predictions.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1938-1940 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The atomic structure of the B-type γ-FeSi2/Si(111) interface has been determined by high-resolution transmission electron microscopy combined with dynamical calculations of the image contrast. Among four models for the interface considered here, only one is found to agree with the observations. In this model the Fe atoms at the interface are bonded to the substrate silicon atoms and 8-fold coordinated, as are the Co atoms in the case of CoSi2/Si(111), which is isostructural.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Chromatographia 32 (1991), S. 357-364 
    ISSN: 1612-1112
    Schlagwort(e): Gas chromatography ; Non-equilibrium headspace sampling ; Vegetables and food products ; Flavour compounds
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Summary Static headspace sampling combined with gas chromatography using open-tubular (capillary) columns for the characterization of the flavour of raw vegetables and some vegetable products is described. In order to avoid alteration of the composition of the volatiles, the sample was thermostated for a short time only. Although equilibrium between vapour and sample was not established the reproducibility of such conditions is demonstrated. Typical chromatograms are given; the most characteristic compounds present were identified by mass spectrometry.
    Materialart: Digitale Medien
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