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  • Electronic Resource  (78)
  • 1990-1994  (78)
  • 1
    Electronic Resource
    Electronic Resource
    Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2048-2054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective surface recombination velocity (Seff) at plasma enhanced chemical vapor deposited (PECVD) SiO2/Si interface as a function of surface band bending under illumination was obtained by combining the photoconductive voltage decay measurements with indium tin oxide gate bias voltage, metal-oxide-semiconductor-capacitance voltage, measurements and theoretical calculations. The capture cross sections for electrons and holes are obtained for the first time for the PECVD SiO2/Si interface state. Theoretical calculations of Seff based on the interface parameters, including interface state density and cross sections for electron and hole, were performed to see the effects of the positive oxide charge density (Qox) on Seff. It is found that roughly a 10 times larger value of Qox compared to the midgap interface state density is required to reduce Seff below 10 cm/s for 5 Ω cm (100) p-type Si. These results prove the potential of PECVD SiO2 for effective passivation of Si surfaces for devices like solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356307
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of intrinsic magnetic properties of materials from surface inspection (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5922-5922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface inspection of magnetic properties with a sensor is a useful and practical technique because it gives a rapid and noninvasive measurement and requires minimum material preparation. However, this technique is handicapped by the practical problems of calculating inherent magnetic properties of the material from such a measurement. A transfer function based on the first approximation was developed previously and it worked well when the dimension of the sample was comparable with the inspection head. However, the nonuniform distribution of the magnetic field is an inherent problem and gets more serious when the vertical and lateral dimensions of the test material become comparable with the pole length of inspection head. Therefore, it invalidates the application of first approximation. A more general and practical transfer function is derived in this paper, including the geometry effects of inspection head and test material. This transfer function is based on the surface magnetic charge model and fits well in the situation when the test material has a large dimension. Test results on specimens by direct measurement and measurement from surface inspection will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355513
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  • 3
    Electronic Resource
    Electronic Resource
    Photothermal rate-window spectrometry for noncontact bulk lifetime measurements in semiconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5043-5048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new noncontact technique for the determination of excess carrier lifetimes in semiconductors is presented. The technique employs a square laser pulse (hν≥Eg) and measures the infrared photothermal radiometric response of the sample. By applying the photothermal rate-window concept, the excess photoexcited carrier bulk lifetime was measured with optimal signal-to-noise (S/N) ratio and simple, unambiguous interpretation from the maximum position of the rate-window signal. The technique has been applied to Au-, Fe-, and Cr-doped Czochralski silicon crystals. The experimental results from boxcar and lock-in rate-window methods were found to agree very well. The results are further mostly in agreement with those from the noncontact laser/microwave detection method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353775
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of magnetic circuit characteristics for comprehension of intrinsic magnetic properties of materials from surface inspection : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5620-5622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transfer function is presented for calculating magnetic field and flux density inside a test material as a result of surface measurement. By considering flux leakage, we introduce a parameter η, called the leakage coefficient, which can be experimentally determined. It is introduced into the equations to make the transfer function more practical. The distribution of field inside a test material is then discussed in accordance with a surface magnetic charge model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353616
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of finely structured metal-insulator superlattice particulates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3366-3368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical properties of new "superlattice particles'' that can be made of precisely controlled metal-insulator layers fabricated by sputtering or evaporation techniques. We found that there are two limits to the reflectivity behavior corresponding to wide and narrow particles. In the narrow-particle limit, a series of sharply defined absorption peaks at frequencies controlled by the width is observed. In the wide-particle limit, most of the light incident on the particles will be absorbed. Materials of this type possess desirable infrared absorption characteristics and can be used for new polarization sensitive infrared absorbers and detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348535
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  • 6
    Electronic Resource
    Electronic Resource
    Phototransmission study of strained-layer InxGa1−x As/GaAs single quantum well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5388-5390 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the phototransmission measurement of strained-layer InxGa1−x As/GaAs single quantum well structures at room temperature. The spectra obtained show distinct features of excitons in the single quantum wells. Fitting of the phototransmission spectrum indicates that the excitonic transition energy modulation is the main mechanism. The phototransmission can be used as a supplement to photoreflectance due to its sensitivity and convenience.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347019
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  • 7
    Electronic Resource
    Electronic Resource
    Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2856-2859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that plasma-enhanced chemical-vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime ((approximately-greater-than)5 ms) and extremely low surface recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A(ring)) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal-oxide-semiconductor analysis and model calculations showed that such a low recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface-state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low surface recombination velocity. Some degradation in the surface recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354638
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  • 8
    Electronic Resource
    Electronic Resource
    Estimation of fatigue exposure from magnetic coercivity : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6975-6977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the effects of fatigue on A533B steel under constant load amplitude is reported in this paper. It was found that the plastic strain of the sample accumulated logarithmically with the number of stress cycles after initial fatigue softening. Based on the fact that plastic strain is often linearly related to the coercivity of material, at least for small changes of Hc, a phenomenological relationship has been developed and tested to correlate the number of stress cycles to this magnetic parameter. This result represents the first successful attempt to relate the fatigue exposure directly to a magnetic parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356746
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  • 9
    Electronic Resource
    Electronic Resource
    Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with critical current density up to 106 A/cm2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354440
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  • 10
    Electronic Resource
    Electronic Resource
    Evaluation of fatigue damage in steel structural components by magnetoelastic Barkhausen signal analysis : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6165-6167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper is concerned with using a magnetic technique for the evaluation of fatigue damage in steel structural components. It is shown that Barkhausen effect measurements can be used to indicate impending failure due to fatigue under certain conditions. The Barkhausen signal amplitude is known to be highly sensitive to changes in density and distribution of dislocations in materials. The sensitivity of Barkhausen signal amplitude to fatigue damage has been studied in the low-cycle fatigue regime using smooth tensile specimens of a medium strength steel. The Barkhausen measurements were taken at depths of penetration of 0.02, 0.07, and 0.2 mm. It was found that changes in magnetic properties are sensitive to microstructural changes taking place at the surface of the material throughout the fatigue life. The changes in the Barkhausen signals have been attributed to distribution of dislocations in stage I and stage II of fatigue life and the formation of a macrocrack in the final stage of fatigue.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352737
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