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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2361-2365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP crystals were etched by reactive ion etching (RIE) with gas mixture of ethane and hydrogen (C2H6/H2), and etching damages were characterized by photoluminescence (PL) measurements of near-edge and defect-related emissions. Near-edge PL emission intensities after RIE were equal to or larger than those before RIE, except for the samples etched for 50 min. The damage introduced by RIE was restricted to the very-near-surface region which can be removed by HF treatment. The peak energy of defect-related 1.1-eV deep emission bands shifted toward the lower-energy side for the crystals with etching damages at the surface. The peak shift is attributable to the increase of defect complexes such as P-vacancy–P-interstitial or P-vacancy–In-vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349436
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  • 2
    Electronic Resource
    Electronic Resource
    Slow response and Eu2+-related trapping states in CaS:Eu thin-film electroluminescent devices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5018-5024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to clarify causes of the slow buildup of the optical output, i.e., slow optical response, in red-emitting CaS:Eu thin-film electroluminescent devices, Eu2+ concentration and temperature dependence of the response time of transferred electrons were measured. It was found that the response time increased exponentially with the increase in Eu2+ concentration and temperature. To understand these results, trapping states in CaS:Eu phosphor layer were studied by measuring temperature dependence of the following electro-optical characteristics with Eu2+ concentration as a parameter; (i) decay profile of trapped electrons, (ii) photoluminescent intensity, and (iii) photoinduced charge density. From these measurements, it was found that there existed two kinds of shallow states in the band gap of CaS. One was electron trapping states located at approximately 0.15 eV below the conduction-band minimum. These states were considered to be generated by Eu2+ clusters. The other was located at 0.06–0.08 eV below the conduction-band minimum. These states were considered to be 5d-excited states of isolated Eu2+ activators. Based on these experimental results, an energy band model for CaS:Eu thin film was proposed and causes for the slow optical response were discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349006
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of an electric field on exciton recombination in three-step asymmetric coupled quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2105-2109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiative transitions of (100)- and (311)A-oriented three-step asymmetric coupled quantum wells in an electric field are studied by photoluminescence. Four distinct transitions are observed in the spectra which exhibit remarkably complex energy shifts with the applied field. It is shown that these transitions originate from the two pairs of spatially direct and indirect heavy-hole excitons in the three-step quantum well and that their electric-field dependence is dominated by the conversion of the direct into the indirect excitons and vice versa. Furthermore, we discuss the effects of the nonconventional crystal orientation and show that substantial modifications of the basic electro-optical properties can be achieved from internal piezoelectric fields incorporated within the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356315
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  • 4
    Electronic Resource
    Electronic Resource
    Two-photon processes in defect formation by excimer lasers in synthetic silica glass (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1891-1893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100362
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  • 5
    Electronic Resource
    Electronic Resource
    Specific lattice location of Zn in CdTe determined by ion-channeling methods (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 200-202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99653
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  • 6
    Electronic Resource
    Electronic Resource
    Mesh effect in a parallel-plate analyzer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1606-1612 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The effect of field irregularity due to the use of conducting meshes to cover holes of a lower electrode in a parallel-plate electrostatic analyzer, is experimentally and numerically investigated. Displacement of a focal point and degradation of analyzer characteristics are found in the experiment. Dependence of analyzer characteristics on wire spacing is obtained. Primary results are also confirmed by numerical analysis. Criteria for error estimation are theoretically derived and found to be consistent with the experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144900
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  • 7
    Electronic Resource
    Electronic Resource
    Sm2+-doped silicate glasses prepared by a sol-gel process (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1227-1229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicate glasses, Al2O3⋅9SiO2, were successfully prepared to incorporate Sm2+ ions using a sol-gel process. The glasses synthesized through hydrolysis of Si(OC2H5)4, Al(OC4H9)3, and SmCl3⋅6H2O were heated in air, followed by heating in the presence of hydrogen, in which samarium ions were reduced from the trivalent to divalent state. Glasses incorporated with Sm2+ were colorless, transparent, and showed an intense emission with peaks at 683, 700, and 725 nm due to 5D0→7F0,1,2 transitions, respectively, of the Sm2+ ions. Irradiating the glasses with an Ar laser lowered the intensities of emission from Sm2+ ions and did not promote the formation of Sm3+ ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112078
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  • 8
    Electronic Resource
    Electronic Resource
    Shaped electrode system for high voltage parallel plate analyzer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4446-4449 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new modification on the parallel plate analyzer for 500 keV heavy ions to eliminate the effect of the intense UV and visible radiation, is successfully implemented. Its design principle and results of numerical optimization are presented. In addition, the analyzer characteristics experimentally obtained in a high temperature plasma device, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143695
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  • 9
    Electronic Resource
    Electronic Resource
    Bridging of macrodithionolactones to bicyclic systems. Synthesis and modeling of oxapolycyclic frameworks (1990)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 112 (1990), S. 3040-3054 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00164a026
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  • 10
    Electronic Resource
    Electronic Resource
    Out-diffusion of Ga and As atoms into dielectric films in SiOx /GaAs and SiNy/GaAs systems (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5809-5815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual Ga and As atoms in SiOx and SiNy dielectric films deposited on GaAs were investigated by Rutherford backscattering spectroscopy and particle-induced x-ray emission techniques. Both Ga and As atoms were detected in the films after high temperature heat treatment, and even in the films as-deposited. The magnitude of the residual atoms presumably out-diffused from GaAs substrates was of the order of 1×1019 /cm3. The concentration of Ga atoms prevails over that of As atoms in SiOx/GaAs systems as is generally known, and vice versa in SiNy/GaAs systems after heat treatment. Dynamic behavior of Ga and As atoms in the films as functions of annealing temperature and annealing time cannot be explained by a simple diffusion mechanism. A model is proposed that the damaged layer around the interface of the systems is responsible for the anomalous out-diffusion phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343651
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