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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Deep levels in alpha-irradiated platinum doped n-type silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2553-2555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep level transient spectroscopy technique has been used to study the interaction of 5.48 MeV α particles with deep levels in Pt-doped n-type silicon. Production rates and annealing behaviors of alpha-radiation-induced levels in the presence of platinum have been investigated. Isochronal annealing characteristics of Pt-related levels before and after irradiation have also been studied. Our results are compared to published data on electron irradiation of Si:Pt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357549
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of deep levels introduced by alpha radiation in n-type silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3698-3708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed deep-level transient spectroscopy study of the characteristics of deep-level defects introduced by 5.48 MeV alpha particles in low-doped n-Si is reported. The deep-level characteristics studied include emission rate signatures, activation energies, capture cross sections and their temperature dependence, and defect concentrations and their spatial profiles. At least five deep levels in the upper-half band gap and two levels in the lower-half gap have been observed as a result of irradiation and characterized in detail. A systematic study of their generation rates up to a dose of about 3×1010 alpha particles/cm2 has been performed providing insights into the dose dependence of their formation mechanisms. Interesting room temperature transformation phenomena have been observed in our deep-level spectra during room temperature storage of the irradiated samples. Extensive isochronal thermal annealing measurements have been carried out to obtain data on the anneal-out characteristics of the radiation-induced deep levels and to identify these with the known defects wherever possible. A number of new annealed-in levels have been observed during this investigation. A detailed comparison with the published results is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352930
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Study of alpha-radiation-induced deep levels in p-type silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4240-4247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels introduced by 5.48 MeV alpha particles in p-type silicon have been studied using deep-level transient spectroscopy. The generation rates of these defects have been obtained up to a dose of 1.2×1011 α particles/cm2. Detailed data have been obtained on the electrical characteristics of the two deep levels in the lower-half band gap at Ev+0.21 eV and Ev+0.35 eV and one level in the upper-half gap of silicon at Ec−0.25 eV introduced by irradiation. These characteristics include emission rate signatures, carrier capture cross sections, and their temperature dependence and deep-level concentrations. Detailed isochronal annealing measurements have been performed to obtain data on the annealing behavior of the deep-level defects and also to help identify these centers. Some interesting phenomena relating to temporal changes in our deep level spectra stimulated by minority carrier injection have been observed and discussed in the light of the available literature on radiation-induced defects in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352803
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of mass and nuclear charge distributions of229th(nth, f). implications for fission dynamics (1990)
    Springer
    The European physical journal 335 (1990), S. 41-48 
    Details
    ISSN: 1434-601X
    Keywords: 20.00 ; 25.85.Ec
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The mass and nuclear charge distributions of fission fragments from229Th(nth, f) have been measured at several kinetic energies with the mass spectrometer Lohengrin (ILL-Grenoble). The average proton e-o effect, which reaches 41%, induces large oscillations in the parameters of the isotopic charge distribution. A comparison of the data from different fissile nuclei shows the importance of the last stage of the process for intrinsic excitations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289346
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    β-Radiation-induced conductivity of poly(2-vinylpyridine)-cobalt complex (1994)
    Springer
    Journal of materials science 13 (1994), S. 1426-1427 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00405052
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    Paper (German National Licenses)
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