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  • 1990-1994  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Bistable behavior of the dark current in copper-doped semi-insulating gallium arsenide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4354-4357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dark current characteristics of gallium arsenide doped with silicon and compensated with diffused copper were found to have a pronounced region of current controlled negative differential conductivity (ndc) similar to the characteristics of a thyristor. The resistivity of the semi-insulating semiconductor was measured to be 105 Ω cm for applied voltages up to 2.2 kV, which corresponds to an average electric field of 38 kV/cm. At higher voltages, a transition to a stable high current state was observed with a current rate of rise exceeding 1011 A/s. There is evidence of the formation of at least one current filament during this transition. A theoretical model based on drift diffusion and boundary conditions that allows double carrier injection at the contacts has been used to show that the observed negative differential resistance is due to the filling of deep copper acceptors. The model also shows that the ndc curves may be tailored by adjusting the copper concentration. Doping of GaAs with various concentrations of copper was shown to change the dark current characteristics in a way predicted by the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351365
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Modeling of electron-beam-controlled semiconductor switches (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 318-323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subject of this paper is the mathematical modeling of a recently proposed class of electron-beam-controlled high-power semiconductor switches that are able to overcome the space-charge limitation of conventional electron bombarded semiconductor devices by utilizing the secondary ionization effects of cathodoluminiscence and bremsstrahlung. Current densities of several kA/cm2 at forward voltages some 10 V can be controlled with an electron beam of 100 keV and 1 A/cm2; holdoff voltages of more than 100 kV/cm and dark currents as small as 10 μA/cm2 are possible. The concept has several possible applications: Its fast and repetitive closing and opening under load makes it suitable for inductive energy storage applications; its linear characteristics suggests a use as a high-power modulation device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347135
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Er-diffused Ti:LiNbO3 waveguide laser of 1563 and 1576 nm emission wavelengths (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first continuous wave (cw) and pulsed mode operation of an Er-diffused Ti:LiNbO3 monomode waveguide laser at 1563 nm (E⊥ c) and 1576 nm (E(parallel) c) wavelengths is reported. A tunable Tl:KCl color center laser was used as a pump source. With π-polarized (Ep(parallel) c) pump radiation of 1479 nm wavelength an oscillation threshold of 13 mW coupled pump power was achieved for the 1576 nm emission line. Above 25 mW pump power additional lasing at 1563 nm wavelength was observed. σ-polarized (Ep⊥ c) pumping led to a single line emission at 1563 nm throughout with the highest cw output power of 3 mW and a slope efficiency of 3%. Time averaged emission linewidths of about 0.6 nm were measured for both wavelengths at about two times the threshold pump power level. With pulsed excitation of about 1 W coupled peak power output pulses of up to 200 mW peak power were measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107610
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    Paper (German National Licenses)
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