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  • 1
    Electronic Resource
    Electronic Resource
    Absolute magnetometry at nanometer transverse spatial resolution: Holography of thin cobalt films in a scanning transmission electron microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7418-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for the absolute measurement of magnetization at nanometer spatial resolution in magnetic thin films has been developed. A biprism placed in the illumination system of a scanning transmission electron microscope allows the operation of two distinct holography modes. The absolute mode displays a linear change in phase difference for regions of constant magnetization and thickness and the slope determines the magnitude of magnetization. The differential mode displays a constant value of phase difference in these regions allowing a simple and straightforward determination of domain wall profiles. Micromagnetic structure extracted from identical areas of thin Co films is compared using the new holography modes, differential phase constrast Lorentz microscopy and conventional Fresnel Lorentz microscopy in the same instrument.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356658
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  • 2
    Electronic Resource
    Electronic Resource
    Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 698-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a nanoprobe electron beam 4 A(ring) in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345774
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness dependence of ferroelectric domains in thin crystalline films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of ferroelectric domains in thin free-standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112835
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "Electron holographic study of ferroelectric domain walls'' (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2446-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109340
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical and experimental studies of electron resonance effects in reflection high-energy electron diffraction (1991)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 317-327 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The electron resonance effect for 100 keV electrons incident on the surface of GaAs (110) in RHEED is studied by theoretical simulations using multislice theory and experimental observations. The exact resonance conditions, effective resonance region, effective penetration depth of electrons at or near the resonance condition and scattering processes involved for the resonance effect are investigated. It is found that the intensity of the 440 specularly reflected beam is mainly due to direct reflection from the surface atomic layer and beam enhancement due to surface channeling effects under the resonance conditions seems to be insignificant. For the 880 specularly reflected beam most of the electron intensity penetrates the surface and is diffracted by the crystal. The resonance condition for the 880 specular beam is satisfied when the transmitted beam excites a strong surface wave which propagates in the direction parallel or nearly parallel to the surface and is localized in the surface region by the surface potential barrier; double diffraction from the surface beam to the specular beam then enhances the total intensity in the specular beam. The exact resonance condition for the 880 beam is found to be at the glancing angle of 35.7 mrad and the azimuth angle of 29.7 mrad. A strong wave field is localized in the surface region at the resonance condition with an effective electron penetration depth of ̃5 Å, which increases to ̃35 Å on going to the nonresonance conditions. The effective resonance region for the 880 spot is ̃2 mrad about the azimuth angle and 1̃ mrad about the glancing angle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S010876739001025X
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  • 6
    Electronic Resource
    Electronic Resource
    Brillouin zones and Kikuchi lines for crystals under electron channeling conditions (1991)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 74-82 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The geometry of the Kikuchi lines in high- and low-energy electron diffraction patterns is defined in terms of intersections of the Brillouin zone boundaries with a sphere of reflections. Full treatment of the cases of two-dimensional and one-dimensional real lattices reveals previously unknown boundaries in the form of parabolic surfaces (2D) and paraboloids of revolution (1D). These boundaries are applied to K lines which arise from electron channeling. Correlation is made with the previous explanations of parabolas and circles in the reflection high-energy electron diffraction (RHEED) and transmission high-energy electron diffraction (THEED) patterns and K2 and K1 lines in low-energy electron diffraction (LEED) patterns. Experimental convergent-beam RHEED patterns of a reconstructed MgO (111) surface are presented in which parabolas due to the surface periodicity are shown for the first time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767390010066
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  • 7
    Electronic Resource
    Electronic Resource
    HREM imaging of small Pt clusters dispersed in Y-zeolites (1990)
    Springer
    Catalysis letters 5 (1990), S. 1-11 
    Details
    ISSN: 1572-879X
    Keywords: HREM ; small Pt clusters ; zeolites
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract High resolution electron microscopy (HREM) has been used to study dispersed Pt clusters in NaY- and USY-zeolites. All the samples contained 0.8% Pt and were reduced at temperatures of 300 ° C, 500 ° C and 650 ° C. The size of the Pt clusters ranged from a few å up to ∼ 30 å. When the incident electron beam was sufficiently strong, it caused some of the extremely small metal clusters to sinter. This was usually accompanied by zeolite damage. This in-situ sintering must be taken into consideration when interpreting the particle size distribution results obtained solely by TEM, especially for particles that are smaller than 10 å. The minimum phase contrast imaging condition is demonstrated to be more appropriate than optimum defocus for detecting the extremely small Pt clusters inside the zeolite structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00772087
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of the annealed (0001) surface of sapphire (α-al2o3) and interaction with silver by reflection electron microscopy and scanning reflection electron microscopy (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Microscopy Research and Technique 20 (1992), S. 439-449 
    Details
    ISSN: 1059-910X
    Keywords: Single-crystal sapphire ; Oxygen-annealing ; RHEED ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: Annealed (0001) surfaces of single-crystal sapphire (α-Al2O3) rod have been studied in the electron microscope using reflection electron microscopy (REM), scanning reflection electron microscopy (SREM), and reflection high energy electron diffraction (RHEED). Annealed surfaces of (0001) sapphire are vicinal and characterized by close-packed (0001)-oriented terraces separated by faceted multiple-height steps, with edges parallel to energetically preferred low-index directions (〈101―0〉 and 〈112―0〉). These structural features are not seen on cleaved surfaces or polished surfaces treated at temperatures 〈 1,250°C. Oxygen-annealing produces clean surfaces which prove useful for investigating the interaction of deposited metals with the (0001) sapphire. Both REM and SREM (with microdiffraction spots) techniques have been used to observe fine structure of flat Ag islands on the scale of 1 - 100 nm on the (0001)-oriented terraces as well as aggregations at the steps. A preliminary result on interaction with Cu is also included.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1070200413
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  • 9
    Electronic Resource
    Electronic Resource
    Stepped surfaces of sapphire (α-Al2O3) with low miller indices (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Microscopy Research and Technique 21 (1992), S. 10-22 
    Details
    ISSN: 1059-910X
    Keywords: Relationships ; TEM and REM images ; Surface structural features ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: Oxygen-annealed surfaces of sapphire with low Miller indices ((0001), {1010}, {1120}, {1011}) have been studied in both transmission electron microscopy (TEM) and reflection electron microscopy (REM) configurations. The significance of REM diffraction conditions for the determination of the nature of the step heights is discussed. The relationship between the TEM and REM images is explained. The structural features are those that might be expected from considerations of the atom arrangement in the low Miller index planes. The structural features on the surfaces varied with respect to annealing temperature and surface condition. Thermally stable structures that might appear from consideration of the equilibrium-annealing temperature are proposed.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1070210103
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation and characterization of MgO surfaces by reflection electron microscopy (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Microscopy Research and Technique 20 (1992), S. 426-438 
    Details
    ISSN: 1059-910X
    Keywords: Reflection high energy electron diffraction ; Surface topography ; Chemical polishing ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: We have employed several different methods to prepare (100) and (111) surfaces of MgO crystals. (100) surfaces prepared by simple cleaving give good reflection high energy electron diffraction (RHEED) patterns and surfaces with a high density of coarse steps. Chemical polishing of this surface results in a roughening of the topography whilst annealing in oxygen considerably smoothens the surfaces although they appear to be contaminated. Under certain conditions we find that the MgO crystals will cleave along the (111) plane. Both cleaved and mechanically polished (111) surfaces are atomically flat and reconstructed after oxygen annealing.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1070200412
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