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  • 1990-1994  (6)
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  • 1990-1994  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993)
    Springer
    Applied physics 57 (1993), S. 283-289 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper studies the Hot-Carrier (HC) degradation of submicrometer Si MOSTs by the changes in the Random Telegraph Signal (RTS) parameters. It is demonstrated that the amplitude of a pre-existing RTS is markedly changed after stress. In linear operation, a reduction is generally observed for n-MOSTs, while an increase is found for p-MOSTs. For larger drain voltages, the changes are most pronounced in reverse operation, i.e. with source and drain switched, for a forward stress. Hence, the trap-amplitude asymmetry increases after stress. As is demonstrated, there exists a close correlation between the observed changes in the RTS amplitude and in the static device parameters. A simple, first-order model is derived, showing that the HC stress-induced reduction (n-channel), or increase (p-channel) is proportional to the variation of the oxide/interface charge density near the drain. Alternatively, it is demonstrated that the normalized change in the RTS amplitude is equal to the normalized conductance change of the narrow hot-carrier damaged region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332604
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A study of the kink-related excess low-frequency noise in silicon- on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1416-1422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the drain voltage dependence of the low-frequency (lf) noise of partially depleted silicon-on-insulator n-metal-oxide-semiconductor-transistors (n-MOSTs) is investigated in detail at liquid helium temperature. As will be shown, an increase in the noise spectral density is observed at the kink position, similar to bulk n-MOSTs operated at 4.2 K. This excess noise introduces a Lorentzian generation-recombination (GR) component in the lf noise spectrum. The physical mechanism underlying the GR noise is thought to be the same as for bulk transistors: ionization and capture in the depletion region of carriers, which are created at the drain. This generates a fluctuation in the depletion charge, which is translated into a fluctuation of the drain current via a change in the threshold voltage. A model will be proposed that is derived from the analysis previously established for the bulk case. Extension of the model to fully depleted, thin-film transistors and to higher temperatures (77 K, 300 K) will be briefly outlined. As will be demonstrated, a good overall agreement between theory and experiment is obtained whereby the key features of the noise overshoot, i.e., its position and amplitude, are consistently reproduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351701
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The behavior of silicon p-n junction-based devices at liquid helium temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1016-1024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the forward current-voltage (I-V) characteristics of Si p-n junction diodes, fabricated in different state-of-the-art complementary-metal-oxide-semiconductor (CMOS) technologies, are investigated at liquid helium temperatures. As will be shown, three different I-V regimes can exist: a forward breakdown/hysteresis regime at a turn-on voltage which may be larger than the built-in potential of the junction; a thermionic emission regime, corresponding to a I=A exp(qV/kT) relation and a high-injection space-charge-limited regime, giving rise to a current which is proportional to Vn. The anomalous turn-on behavior can be explained by considering the small barrier for carrier injection, which exists at the "ohmic'' contact. It will be demonstrated that the presence of this forward breakdown is strongly determined by the fabrication technology used. In extreme cases (large-area well diodes) multiple breakdown is observed, indicating an inhomogeneous, filamentary current flow. As will be shown, similar breakdown behavior is observed in more complex junction-based Si devices at 4.2 K; the consequences for deep-cryogenic CMOS circuitry will be briefly addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349683
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The charge transport in a silicon resistor at liquid-helium temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4091-4099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T〈30 K) in Si. Furthermore, account is made for the interactions between the injected free carriers and the shallow doping atoms, i.e., mainly trapping and shallow level impact ionization, yielding breakdown of the material at rather low electrical fields F. Good qualitative agreement with measured current-voltage characteristics is found. In addition, the model is able to describe the flow of avalanche-generated current through the substrate/well of a metal-oxide-semiconductor transistor, which is essential for developing a truly analytical description of the low-temperature drain current kink.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346248
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    The decrease of "random telegraph signal'' noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2028-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-frequency (LF) noise behavior of metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied when cycled between inversion and accumulation. On large-area devices the decrease of the LF noise is systematically found, and supports the observations by Bloom and Nemirovsky [Appl. Phys. Lett. 58, 1664 (1991)]. The random telegraph signal (RTS) noise observed in small (submicrometer) devices disappears when the transistor is cycled into accumulation. The drop in LF noise observed may thus be explained by the fact that most or all of the RTSs, which are caused by carrier trapping into slow oxide states, no longer contribute to the noise of the system. The method indicates a possibility to separate the contributions of different sources of 1/f noise in MOSFETs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351145
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs (1994)
    Springer
    Applied physics 58 (1994), S. 353-358 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The experimental gate- (V GS) and drain-voltage (V DS) dependence of the fractional Random Telegraph Signal (RTS) amplitude ΔI D/I D, obtained on a large series of submicron Metal-Oxide Semiconductor Transistors (MOSTs), is reported. The observed variation of the RTS amplitude in linear operation is discussed in view of recently published models. As will be shown, the large spread in weak-inversion amplitudes can only be explained by taking into account the microscopic nature of the oxide trap and its environment. The position of a trap along the channel can in principle be retrieved from studying the so-called RTS amplitude asymmetry, defined as the V DS dependence of the amplitude in both normal and reverse operation of the transistor. Widely different asymmetry behaviour is observed in this work. Here, a qualitative model will be derived which gives a more refined analysis and offers some deeper insight than existing theories. However, to fully understand the RTS amplitude in weak inversion, more microscopic detail is needed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323609
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    Paper (German National Licenses)
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