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  • 1990-1994  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1184-1186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trace impurities of vanadium in Lely-grown silicon carbide single crystals have been detected by their strong, polytype-specific photoluminescence in the 1.3–1.5 μm near-infrared spectral range, as well as by infrared absorption. The spectra arise from the intra-3d-shell transitions 2E(3d1)→2T2(3d1) of V4+Si(3d1). Electron spin resonance reveals that VSi in SiC acts as a deep acceptor, V4+Si(3d1)/V3+Si(3d2)−ˆA0/A−, and possibly also as a deep donor. The role of vanadium as minority-carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2176-2180 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal-field splittings recently observed in the Er-related optical absorption spectra of ErAs films grown on GaAs by molecular-beam epitaxy are further investigated with respect to their applicability in characterizing strain accommodation in ErAs/GaAs multilayer structures. Rutherford backscattering axial channeling measurements are used to directly assess strain accommodation in the epitaxial films. The crystal-field splittings observed in room-temperature absorption spectra of samples containing thick strain-relieved ErAs layers are consistent with the cubic (Oh) symmetry expected for the Er lattice site in unstrained ErAs. In sharp contrast, a multilayer structure containing two-monolayer-thick, coherently strained ErAs layers shows pronounced changes in the energies, linewidths, and relative intensities of the crystal-field-split spectral lines, as well as the appearance of additional weak absorption lines. This behavior is attributed to strain-induced distortion of the crystal field in which the rare-earth ions reside. The relative influence of hydrostatic and uniaxial strain components on the optical spectra is discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 34-36 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed infrared-spectroscopic study is presented of the intra 4f-shell transitions 4I15/2→4I13/2 of Er3+(4f11), at λ=1.54 μm, in single-crystal ErAs films deposited on GaAs substrates by molecular beam epitaxy. Using Fourier-transform infrared absorption spectroscopy crystal-field splittings of both the 4I15/2 ground state and the first electronically excited state 4I13/2 are observed. Good agreement is found between the measured transition energies and those calculated for 4f11 ions in a crystal field of cubic (Oh) symmetry, as expected for the Er lattice site in unstrained ErAs. From the infrared absorption data, the relevant cubic fourth and sixth-order crystal field parameters are determined spectroscopically for the first time.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 666-668 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a novel GaAs:Si/(AlGa)As multiquantum well photodetector structure which exhibits photoresponse maxima in both the 8–12 and 3–5 μm spectral regions. The relative intensity of these maxima strongly depends on the bias voltage, demonstrating the potential of such a structure as a tunable two-color intersubband detector.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2060-2062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1471-1473 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one side of the GaAs quantum well and thicker layers of (AlGa)As. The photoresponse of these structures has an extremely broad (3–11 μm) spectral range and there is a preferential escape direction of the photoexcited carriers towards one direction of the quantum wells giving rise to photovoltaic detector behavior. We found evidence that this transport asymmetry is not only caused by the asymmetric potential distribution, but that interface scattering processes are involved. These scattering processes act differently on the photocurrent and the dark current, which is useful for further optimization of quantum-well infrared detectors.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1665-1667 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence study of InAs/AlSb single quantum well structures with a width varying between 20 and 5 nm is presented. Using Fourier-transform spectroscopy, the spatially indirect radiative recombination is observed. Excitation of the photoluminescence at 1.32 μm instead of excitation in the visible leads to broadening and blueshifting of the spectra. This behavior is explained by a photoinduced increase of the electron concentration. The optically induced blueshift of the low energy onset of the spectra is attributed to screening of an acceptor level in the AlSb barrier near the InAs/AlSb interface, located about 80 meV above the AlSb valence band maximum. The blueshift of the high energy of the luminescence spectra is limited to a transition energy of 420 meV, providing evidence for the existence of a deep level in the AlSb barriers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 782-784 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the spatial distribution of the dopants strongly influences the transport asymmetry and the photovoltage observed in double barrier quantum well intersubband photodetectors. This influence can be quantitatively explained by the local space-charge fields arising from an asymmetry of the doping profile with respect to the well centers. The resulting transport model correctly predicts both the observed transport asymmetry of the photocurrent and the opposite asymmetry of the dark current.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of muscle research and cell motility 15 (1994), S. 29-36 
    ISSN: 1573-2657
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Phalloidin was shown to increase the ATPase activity and Ca2+ sensitivity of both bovine cardiac and rabbit psoas myofibrils when assayed in a solution containing 50 mm KCl, 100 mm MOPS (pH 7.0), 2 mm MgCl2, 1 mm ATP, 2 mm EGTA, and varying concentrations of Ca2+ (temperature 21–22°C). The phalloidin effect in cardiac myofibrils developed over a time course of several minutes in the presence of 50 μm phalloidin. Relative increase of ATPase activity was maximal at pCa 8 and decreased with decrease in pCa. In cardiac myofibrils the increase was about 70% at pCa 8 and 20% at pCa 4 following 20–30 min pre-incubation with 2 μm or 50 μm phalloidin. The effect persisted after excess phalloidin was washed out. The increase in Ca2+ sensitivity was approximately 0.15 pCa units. For skeletal myofibrils treated with 2 μm phalloidin all changes were considerably less than those seen with cardiac myofibrils and the changes were even less when the myofibrils were exposed to 50 μm phalloidin. These results show that when specifically bound to actin, phalloidin can change the kinetic parameters of the cross-bridge cycle and may also alter the Ca2+ sensitivity of the contractile system. The effects of phalloidin seem to vary with muscle type.
    Type of Medium: Electronic Resource
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