Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2028-2030
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon metal-oxide-semiconductor field-effect transistors have been constructed, using a novel edge deposition technique, which have active channel lengths ranging from 7.7 to 124 nm. The electrical conductance of the devices, at temperatures below 4.2 K, shows oscillations which are attributed to quantum mechanical interference due to reflections from the device edges. Model calculations are in good agreement with the experiment.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106121
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