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  • 1
    Electronic Resource
    Electronic Resource
    Thermal process for orientation of polyaniline films (1991)
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 4157-4161 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00014a031
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and Functionalization of Unsaturated Polyethylene: Poly(ethylene-co-1,4-hexadiene) (1994)
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 7533-7537 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00104a005
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  • 3
    Electronic Resource
    Electronic Resource
    Fullerene-bound dendrimers: soluble, isolated carbon clusters (1993)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 9836-9837 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00074a075
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  • 4
    Electronic Resource
    Electronic Resource
    Implicit finite volume methods and application to a delta wing problem (1993)
    Springer
    Computational mechanics 11 (1993), S. 408-420 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A comparative study is made of three finite volume formulations to investigate the efficacy of flux limiters and damping coefficients on three-dimensional Euler and Navier-Stokes solutions. Spatial discretizations of convective and diffusive fluxes based on a central, a modified central and an upwind schemes are described. The system of ordinary equations is then solved by a factored implicit stepping technique for the computation of supersonic flow over a blunt delta wing. The modified central method, stabilized by flux limiters and a second-order damping, provides high-resolution, non-oscillatory shocks comparable to the characteristic-damped upwind method. It also yields as accurate solutions for viscous flows as the central scheme blended with second- and fourth-order damping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00350096
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  • 5
    Electronic Resource
    Electronic Resource
    Optical interference in second-harmonic generation from a metal surface with molecular adlayers (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 7058-7063 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A strong oscillation pattern was observed in optical second-harmonic generation (SHG) at a Ag(111) surface under pyridine adlayers with variable thickness. This oscillation appears only when s-, but not p-, polarized fundamental light is used. This effect is attributed to the modulation of the radiation efficiency of the fundamental light penetrating into the Ag bulk and of the second-harmonic light radiating out to the vacuum by pyridine overlayers through optical interference. A standard optical interference model has been developed to quantitatively analyze the oscillation patterns and determine the adlayer thickness. It was found that at 90 K the pyridine overlayer growth rate is 1.4 A(ring) per Langmuir exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468331
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of Si1−xGex/Si superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3474-3479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting computer-simulated double-crystal x-ray-diffraction rocking curves to the experimental data, it is determined that there exist graded variations in both the component thickness ratio t1/t2 (t1 and t2 are the thickness of the Si1−xGex and the Si layers, respectively) and the fraction x in one sample. The x-ray grazing incidence diffraction experiments reveal a lattice strain relaxation of about 27% in another sample. The lattice relaxation and the influence of variations of x and t1/t2 on the rocking curves are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351423
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth conditions and kinetics in low-temperature ArF excimer laser photochemical-vapor deposition from disilane (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial Si films were deposited using an ArF excimer laser beam parallel to the substrate to photodissociate Si2H6 at low temperatures (250–350 °C) under laser intensity and Si2H6 partial pressure conditions that result in low initial photofragment concentrations (〈 1013 cm−3). Total pressure and flow conditions were chosen such that there is little secondary photolysis of the initial photofragments. The deposition yield of solid Si from photoexcited Si2H6 is estimated to be 0.20±0.04, indicating that in order for film growth to result solely from the primary products in ArF laser (193 nm) photolysis of Si2H6, a sticking coefficient ≥0.6 must be assigned to the dominant growth precursor. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1–15 mJ/cm2 pulse and 5–40 mTorr, respectively. Increasing the distance between the laser-beam axis and the silicon substrate results in a reduction of the growth rate that can be explained by gas-phase chemical reaction of the growth precursors as they diffuse to the substrate. Epitaxy is maintained for temperatures above the threshold for thermal decomposition of surface (SiH2)n chains at ∼250 °C, and for temperatures below the onset of Si2H6 pyrolysis and rapid thermal desorption of surface H2 at ∼350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351791
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of the sub-band energy in the V-shaped potential well of δ -doped GaAs by deep level transient spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2425-2427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112695
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of surface roughness of InP (001) wafers by x-ray scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357366
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  • 10
    Electronic Resource
    Electronic Resource
    Dielectric surface preflashover processes in vacuum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3313-3320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface preflashover phenomena across alumina ceramics in vacuum are presented. The localized plasmas are identified by the spatially resolved images that appear in a pulse surface preflashover phase using an intensified charge-coupled-device camera, along with coordinated, time-resolved preflashover current and luminosity. It was observed that significant preflashover activity associated with the localized plasmas on the surface appears after a flashover event and disappears after a few pulse voltage applications. Large bursts of current pulses (several hundred milliamperes) with no counterpart in the luminosity signal were also observed during preflashover. These phenomena cannot be explained satisfactorily by electron stimulated gas desorption. The effect of adsorbed gases and surface polishing on preflashover are presented and discussed. The experimental results indicate that preflashover essentially depends on the surface state (physical and chemical) of the solid insulator. The preflashover conduction associated with the localized plasmas is attributed to the detrapping and impact-ionization processes associated with defect centers. The results reported support the surface flashover model based on trapping/detrapping and impact ionization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357453
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