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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of Co-Zn ferrite films at low substrate temperature by plasma-free dc sputtering for magnetic recording media : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5975-5977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-Zn ferrite films with small grains for magnetic recording media at ultrahigh density were deposited "plasma free'' on a substrate by using the dc facing targets sputtering apparatus without subsequent annealing process. The films deposited at a substrate temperature Ts as low as 90 °C were composed of crystallites with excellent (111) orientation and exhibited a saturation magnetization 4πMs of 3.3 kG and an in-plane and perpendicular coercivity Hc(parallel) and Hc⊥ of 1.8 and 2.2 kOe, respectively. The films deposited at a Ts of 250 °C exhibited 4πMs of 4.8 kG and possessed almost the same Hc(parallel) and Hc⊥ of 1.5 kOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355530
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  • 2
    Electronic Resource
    Electronic Resource
    The control of magnetic characteristics of BaM ferrite thin films by bias sputtering (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6696-6696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin films of a magnetoplumbite type of barium (BaM) ferrite have been deposited on SiO2/Si substrates at a rate of 100 A(ring)/min in a gas mixture of 10% O2–90% Ar at a pressure of 2 mTorr by using the facing targets sputtering (FTS) apparatus. They possessed excellent chemical stability and high corrosion resistivity as well as perpendicular anisotropy as large as applicable for perpendicular magnetic recording media. They also seem to be applicable for millimeter wave isolator and circulator. In this study, the saturation magnetization Ms, the coercive force Hc, and the anisotropy field Hk of BaM ferrite films have been controlled by adjusting the rf-bias voltages to substrate Vb during sputtering, where Vb was always negative. The dependencies of Ms and Hc on Vb were shown in Fig. 1. Ms took the maximum value as large as 345 emu/cc at Vb of −30 V and decreased as Vb decreased in the range below −50 V. On the other hand, the perpendicular Hc decreased as Vb increased in the range above −100 V and took the minimum value as low as 910 Oe at Vb of −95 V. Hk and the magnetic anisotropy constant Ku also greatly depended on Vb. Such an apparent Vb dependence of these magnetic characteristics of BaM ferrite films seem to be attributed to the definite change in c-axis orientation of hexagonal crystallite and the different distribution of Fe3+ ions among several occupation sites. These results indicated that the c-axis orientation of BaM ferrite crystallites were promoted by applying proper Vb. Consequently, the bias sputtering technique with FTS method may be useful for preparing the BaM ferrite films composed of the multilayers with different magnetic characteristics, even if only one pair of targets are used without adjusting the other sputtering conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352506
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and magnetic properties of BaM films with excellent crystallinity by Xe sputtering : 38th Annual Conference on Magnetism an Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7131-7133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: M-type barium ferrite (BaFe12O19) films were deposited on a ZnO underlayer by sputtering with mixture of Ar, Xe, and O2 gases. PO2 and PAr+Xe were set at 0.01 and 0.09 Pa, respectively, where PXe was changed from 0.00 to 0.09 Pa. The dependencies of surface morphology, 〈D〉, Δθ50, Ms, and Hc⊥ and Hc(parallel) on PXe were investigated. Both BaM layers deposited at PXe and PAr of 0.09 Pa possessed smooth surface and exhibited Δθ50, Ms, Hc⊥, and Hc(parallel) of about 4°, 300 emu/cm3, 2.0 and 0.3 kOe, respectively. The BaM layer deposited at PXe of 0.04 Pa possessed a rough surface and exhibited Δθ50 and Hc(parallel) as large as about 9° and 0.6 kOe, respectively, and Ms as small as about 200 emu/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356701
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Left ventricular performance in rats with chronic cardiac overload due to arterio-venous shunt (1990)
    Springer
    Heart and vessels 5 (1990), S. 65-70 
    Details
    ISSN: 1615-2573
    Keywords: Chronic volume overload ; Arteriovenous shunt ; Hypertrophy ; Dilation ; Contractility ; Myocardial working capacity ; Myosin isoenzyme pattern ; Rat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The effects of experimental arteriovenous shunt (AV shunt) on left ventricular dynamics and myocardial mechanics were investigated in female Wistar rats, weighing approx. 240 g. The main goal of the study was to characterize ventricular and myocardial working capacity and to estimate the significance of the various processes involved in cardiac adaptation to the altered loading conditions. Twelve weeks after operation, systemic blood pressure was slightly elevated in AV shunt rats as compared with age-matched controls, although total peripheral resistance (as related to a common aortic pressure) was significantly reduced. Heart rate and cardiac output were considerably increased. Despite marked left ventricular dilatation with increased end-diastolic and systolic wall stress, no signs of resting insufficiency were present. Left ventricular weight, end-diastolic volume and pressure, stroke volume, and ejection fraction were increased. The area between the curve of isovolumic maxima and the end-diastolic P-V curve (up to a defined end-diastolic pressure) and the normalized area between the isovolumic and end-diastolic stress-length curves as well as the maximum rate of stress development were augmented, even in the specimen with the highest degree of ventricular dilatation—despite a shift of the myosin isoenzyme pattern towards VM3. The study reveals that besides the change in ventricular mass and configuration, augmented preload is involved in cardiac adaptation to the altered hemodynamic state. Furthermore, there are indications of an intensified sympathetic stimulation of the heart. Transformation of the myocardium towards a slower muscle seems to be of minor functional significance under the conditions of the present experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02058319
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