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  • 1990-1994  (12)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8017-8026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge concentration using in situ ellipsometry while the material is slowly removed from a silicon substrate using reactive-ion etching (RIE). Homogeneous, strained epitaxial SiGe films on silicon substrates were used. The Ge concentration was obtained by Rutherford backscattering. If an unknown SiGe structure is etched with RIE, in situ ellipsometry yields combinations of the ellipsometric angles Ψ and Δ with time. Starting at the Si substrate, these points are, on a point-to-point basis, converted into combinations of complex refractive index and depth in a numerical procedure. For this inversion of the ellipsometry equations, the known relation between the real and the imaginary part of the refractive index of SiGe is used. Finally the refractive indices are converted into Ge concentrations. Thus the depth profile of the Ge concentration in an unknown epitaxial SiGe structure can be inferred from an in situ ellipsometric measurement during RIE of the unknown structure. The obtained resolutions in depth and Ge concentration are 0.3 nm and 0.3%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353916
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  • 2
    Electronic Resource
    Electronic Resource
    A photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6349-6352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of reactive-ion-etching (RIE) on the near-surface crystal quality of Czochralski silicon has been studied by photoluminescence spectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydrogen to the plasma as well as the time of treatment are studied and discussed in terms of defect formation and etch rate. Photoluminescence spectra of samples recorded after a magnetically enhanced reactive-ion-etching process are also presented. The introduction of defects depending on the self-bias voltage and the etch rate are investigated for different magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355158
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of plasma exposed silicon surfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5597-5603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of photoluminescence (PL) spectra obtained with silicon exposed to various plasmas as a function of plasma etch treatment conditions is reported. Phosphorus- or boron-doped covering a large range of doping concentrations, Czochralski or float-zone-grown silicon crystals were investigated. The effect of various etching gases on the luminescence spectra as well as the effects of subsequent annealings are reported. Two types of recombination process are observed: (i) The first gives rise of sharp luminescence lines, such as the W (1018 meV), X (1040 meV), T (935 meV), I (965 meV), G (967 meV), C (790 meV), and P (767 meV) lines, which are known to originate from defects produced by high-energy irradiation and then manifest damage of the crystalline material. Other sharp PL lines at 1015, 1008, and 997 meV were introduced upon annealing at 400 °C. (ii) The second recombination process induces broad lines or bands in the photoluminescence spectra. The formation and nature of the defects giving rise to both recombination processes are discussed in terms of the plasma conditions and starting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350172
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1013-1021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects introduced by reactive-ion etching and plasma etching using deuterium have been studied in boron-doped Si with the photoluminescence (PL) technique. We have observed a set of broad luminescence bands in the below-band-gap range between 1.05 and 0.8 eV. These bands change in intensity as well as in photon energy with annealing. This has been studied by isochronal annealing treatments from 75 to 800 °C in steps of 50 °C, each for 30 min. Directly after the plasma treatment we observe overlapping broad bands at liquid-He temperature, with a peak around 0.9 eV and a half-width of about 100 meV. There is a large shift of these bands to higher photon energy after the annealing step at 325 °C, peaking at about 0.925 eV with a half-width of about 60 meV. The intensities of the broad PL bands increase with increasing annealing temperature up to about 375 °C, while they decrease in intensity at higher temperatures. The changes in PL intensity of the broad bands after annealing are shown to be related to the difference in deuterium concentration near the surface, as determined by secondary-ion mass spectrometry, due to the passivation effect the deuterium has on other competing recombination channels. The samples have not completely recovered after annealing at 800 °C, where a broad PL band at 0.96 eV still remains. PL bands observed in hydrogenated samples containing "bubbles'' will also be reported. We attribute all these PL bands to electron-hole recombination in heavily damaged regions, where electrons and holes can be localized in potential wells caused by the strain from the hydrogen-induced microscopic defects. This "strain-induced intrinsic quantum well'' model is supported by the temperature and excitation intensity dependence of the broad PL bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345784
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  • 5
    Electronic Resource
    Electronic Resource
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348517
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107314
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  • 7
    Electronic Resource
    Electronic Resource
    Selective dry etching of silicon with respect to germanium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ((approximately-equal-to)3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102490
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  • 8
    Electronic Resource
    Electronic Resource
    Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2875-2877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry has been used to measure in real time the surface damage introduced during electron cyclotron resonance (ECR) plasma etching of silicon as a function of rf bias to the substrate. CF4 and SF6 plasmas were employed. For all ECR plasma operating conditions, the amount of Si surface damage increases with the rf bias voltage, without an apparent damage threshold. It is shown that the surface damage depends on the ion current to the substrate and the gas, with SF6 plasmas resulting in the least surface damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108062
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  • 9
    Electronic Resource
    Electronic Resource
    Interactive effects in the reactive ion etching of SiGe alloys (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine-, chlorine-, and bromine-based low-pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine-based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is (approximately-equal-to)2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104942
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  • 10
    Electronic Resource
    Electronic Resource
    Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1787-1789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A picosecond ultrasonics technique has been used to detect interfacial fluorocarbon (CFx) layers as thin as 0.5 nm between aluminum and silicon. The presence of the CFx material reduces acoustic damping and heat loss from the Al film into the Si substrate. This provides a means for noninvasive identification of organic/polymeric contaminants at the buried interface and potentially for characterizing interfacial mechanical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108427
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