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  • 1
    Electronic Resource
    Electronic Resource
    Application of "critical compositional difference'' concept to the growth of low dislocation density (〈104/cm2) InxGa1−xAs (x≤0.5) on GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1752-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer epitaxial structures consisting of InxGa1−xAs layers of various compositions were grown on GaAs substrates by the molecular beam epitaxy technique. Dislocation evolution and residual strain in these heterostructures were studied using cross-sectional transmission electron microscopy (XTEM) and high-resolution x-ray diffraction analyses, respectively. The multilayer heterostructures were designed such that the compositional difference between two adjacent InxGa1−xAs layers in the stack was less than a critical compositional difference of Δx=0.18, taking partial lattice-relaxation into account. XTEM studies of the stacked structures indicated dislocation evolution to be confined to the GaAs substrate and the InxGa1−xAs layers underlying the top InxGa1−xAs layer in the stack, the top InxGa1−xAs layer being essentially dislocation-free. This phenomenon is attributed to a monotonic increase in the yield strength of InxGa1−xAs at the appropriate growth temperatures with increasing values of x. Such behavior appears to persist up to an InxGa1−xAs composition of approximately x=0.5, whereupon a further increase in composition results in dislocation evolution in the top layer of the stack. It is postulated that the yield strength of InxGa1−xAs decreases with increasing values of x beyond x=0.5. Extremely low dislocation density InxGa1−xAs material was grown on GaAs using the stacked structure approach as evidenced by etch pit analysis. For example, dislocation densities of 1–2×103/cm2 and 5–6×103/cm2 were recorded from In0.35Ga0.65As and In0.48Ga0.52As top layers, respectively. Such InxGa1−xAs alloys would be potentially suitable for the fabrication of photonic devices operating at 1.3 μm (x=0.35) and 1.55 μm (x=0.48).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351699
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6124-6127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of zinc blende-GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source. We postulate, based on optical emission spectroscopy studies of the remote plasma, that, in our study, nitrogen atoms are the species primarily responsible for efficient nitridation. The zinc blende nature of the GaN films was confirmed by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, and ex situ low-temperature photoluminescence analyses. Our zinc blende-GaN film growth rates (∼0.3 μm/h) are higher than those reported to date that involve the use of electron cyclotron resonance type reactive nitrogen sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355176
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs substrate cleaning for epitaxy using a remotely generated atomic hydrogen beam (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4610-4613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ GaAs surface cleaning prior to molecular beam epitaxy using a combined thermal/H-atom treatment, the H-atom flux being derived from a rf (13.56 MHz) plasma discharge, hydrogen free-radical source, has been compared and contrasted to conventional thermal treatment of GaAs surfaces. Surface quality, i.e, morphology, was monitored in situ in real time using conventional reflection high-energy electron diffraction and a diffuse optical reflectivity technique employed simultaneously. GaAs surfaces were found to clean readily at temperatures below 400 °C using the combined thermal/H-atom treatment as opposed to the conventional thermal treatment, which requires temperatures in the vicinity of 600 °C. The atomically clean GaAs surfaces were also found to be specular when prepared using the combined thermal/H- atom treatment in contrast to conventional thermally treated GaAs surfaces, which are considerably rough on the atomic scale, surface roughening in the conventional case being associated with the oxide desorption process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352753
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  • 4
    Electronic Resource
    Electronic Resource
    Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2396-2398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the successful fabrication of a planar, low dark current, and high sensitivity In0.4Ga0.6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and anti-reflection coatings, the detector has a quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 μm wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2×10−4 cm2 is 5×10−9 A at −5 V, and the breakdown voltage exceeds 25 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104882
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared absorption in n-type ZnSe/GaAs heteroepitaxial films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2458-2460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the variation of the absorption coefficient αf with wave number W, for Cl-doped n-type (9.4×1016–8×1018 cm−3) ZnSe epitaxial films grown on GaAs. Below the classical mid-infrared range of W, αf has large values (1.6×103–2.11×104 cm−1) appropriate for thin-film measurements, with αf proportional to W−p. Large variations of αf and p occur as a function of the free-electron concentration. The results are compared to a recent theoretical model by Ruda [J. Appl. Phys. 61, 3035 (1987)], which is specific to ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103850
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  • 6
    Electronic Resource
    Electronic Resource
    Strain relief study concerning the InxGa1−xAs/GaAs (0.07〈x〈0.5) material system (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2000-2002 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of dislocations in the InxGa1−xAs/GaAs material system has been studied as a function of the ternary alloy comparison in the range 0.07〈x〈0.5. Cross-sectional transmission electron microscope observations indicate that for x〈0.18, threading dislocations are absent in the epilayer and dislocations propagate from the heterointerface into the GaAs material, while, for 0.18〈x〈0.28, dislocations appear to propagate into both the epilayer and the GaAs. Furthermore, for x (approximately-greater-than)0.28, all the dislocations are observed in the epilayer while the GaAs appears to be dislocation-free. We propose a model involving the balance of forces acting on misfit dislocations generated at the heterointerface which includes a surface image force term to explain our observations of dislocation evolution as a function of the ternary alloy composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105045
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  • 7
    Electronic Resource
    Electronic Resource
    p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2127-2129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm−3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103919
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  • 8
    Electronic Resource
    Electronic Resource
    Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1040-1042 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel approach to growing device quality In0.4Ga0.6As epilayers on GaAs is reported which involves the controlled propagation of dislocations via a carefully designed multistage strain-relief buffer system. Cross-sectional transmission electron microscopy analysis revealed the In0.4Ga0.6As epilayers to be threading dislocation free in contrast to the heavily dislocated material obtained by growing In0.4Ga0.6As directly on GaAs. Hall effect measurements performed on unintentionally doped buffered In0.4Ga0.6As epilayers indicated the room-temperature electron concentrations in the epilayers to be around 1×1015 cm−3 while electron mobilities were around 4700 cm2 V−1 s−1. In addition, strong band-edge photoluminescence was recorded from the buffered epilayers, the luminescence peak occurring at 1304 nm having a linewidth around 7 meV at 13 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103559
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  • 9
    Electronic Resource
    Electronic Resource
    Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2680-2682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1−xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa1−xAs/GaAs epilayers which includes the influence of epilayer composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108107
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  • 10
    Electronic Resource
    Electronic Resource
    Uniform, high-gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An Al0.25Ga0.75As/In0.08Ga0.92As/GaAs heteroemitter bipolar transistor (HEBIT) with a uniformly high common-emitter current gain (β) of 500 was demonstrated for the first time. Using a simple chemical treatment [P2S5/(NH4)2S], we have greatly reduced the surface recombination in the emitter-base junction perimeters, resulting in a tenfold increase in the maximum current gain of the device at low collector currents. InGaAs nonalloyed ohmic contacts were also employed to form both emitter and base electrodes in a one-step process. To evaluate the performance of the HEBIT, we conducted current-voltage measurements and compared the Gummel plots at 300 and 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106664
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