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  • 1990-1994  (32)
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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2743-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348631
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  • 2
    Electronic Resource
    Electronic Resource
    Weak links and critical current density in Bi2Sr2CaCu2Ox thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3886-3889 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization measurements were performed on epitaxial and textured Bi2Sr2CaCu2Ox thin films deposited on (100) LaAlO3 and MgO substrates. An anomalous dependence of the critical current density derived from magnetization hysteresis measurement on magnetic field is observed. The measured critical current density shows a minimum at a magnetic field (Hm) far below the upper critical field Hc2. The measured Hm in epitaxial films has an exponential dependence on temperature, e−T/T0 (T0∼12.5 K). The anomalous field dependence of critical current density is attributed to the presence of weak links in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352875
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  • 3
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of Bi2Sr2CaCu2Ox superconducting thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4080-4082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting Bi2Sr2CaCu2Ox (BSCCO) thin films have been formed by solid phase epitaxy from amorphous films deposited by metallorganic chemical vapor deposition. (100) MgO and LaAlO3 single crystals were used as the substrates. After high-temperature annealing in flowing oxygen, the films consist predominantly of the BSCCO (2212) phase and are epitaxial to the LaAlO3 with the c axis perpendicular to the substrate surface. The epitaxial structure of the films is confirmed by x-ray diffraction measurements including θ/2θ and in-plane Φ scans as well as by cross-sectional high-resolution transmission electron microscopy. Four-probe resistivity measurements show that the critical temperature of the film on LaAlO3 is 78 K. The critical current density of the epitaxial layer was one order of magnitude greater than that of textured films on MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352834
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependent photoluminescent properties of InAsxP1−x/InP strained-layer quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3041-3045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching of photoluminescence from InAsxP1−x/InP strained-layer quantum wells has been investigated over the temperature range of 20–295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1–17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351514
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 405-408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical emission characteristics of highly strained InAs/InP single quantum wells prepared using atmospheric-pressure organometallic vapor-phase epitaxy have been studied. For well thicknesses of one to three monolayers (ML), the photoluminescence (PL) spectra exhibited intense emission in the energy range 1.15–1.3 eV, with typical full width at half maximum of 8–14 meV. The dependence of PL emission energy on well thickness for 1–5-ML-thick wells was compared with the results of a finite-well calculation, taking into account the effects of strain on the band structure. Good agreement between experiment and theory was obtained for a valence-band offset of 270 meV, consistent with recent reports for the InAs/InP system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350289
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  • 6
    Electronic Resource
    Electronic Resource
    Compensation in Ge-doped InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 606-609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and optical properties of Ge-doped vapor epitaxial indium phosphide were studied. From Hall-effect measurements, it was determined that the Ge-doped material was heavily compensated even for highly doped material. The defects responsible for compensating the InP were investigated by low-temperature photoluminescence measurements at 10 K. Strong acceptor-related transitions at 1.379 and 1.395 eV were observed in the doped material. Deep-level emission at 1.17 eV was also observed in the heavily doped material. The relationship between these bands and compensation is discussed. The observed doping dependence of Ge in InP suggests that self-compensation by native defects may be important in determining the electronic properties of group IV doped III-V compounds in support of recent theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346786
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  • 7
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic and photoluminescent properties of InP prepared by flow modulation epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 281-288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial InP has been prepared by flow modulation epitaxy (FME) over the temperature range of 350–600 °C. The growth and properties of the epitaxial InP were studied as a function of modulation period, reactant partial pressure, and growth temperature. The growth rate was dependent on the trimethylindium reactant partial pressure and growth temperature, with growth rates ranging from 6 A(ring)/cycle to 145 A(ring)/cycle. The desorption of trimethylindium was rate-limiting at intermediate temperatures, and the decomposition of trimethylindium was rate-limiting at low temperatures. The deposited layers were n type with room-temperature carrier concentrations ranging from 7 × 1015 cm−3 to 9.5× 1016 cm−3 for layers deposited at intermediate growth temperatures of 520 to 600 °C and Hall mobilities ranging from 3000 cm2/V s to 4100 cm2/V s. For layers grown at 350 °C the carrier concentrations ranged from 4 × 1013 cm−3 to 2 × 1017 cm−3 with Hall mobilities typically less than 750 cm2/V s. The photoluminescence spectra of the as-deposited layers were dominated by intense near-band edge (NBE) emission at 1.414 eV and an acceptor related emission at 1.377 eV. No significant deep level luminescence was observed in the FME-deposited layers. The full width at half maximum values of the NBE luminescence ranged from 5 meV for layers deposited at 580 °C to 20 meV for layers deposited at 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350701
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  • 9
    Electronic Resource
    Electronic Resource
    Symmetry of optically active Yb-related centers in InP and In1−xGaxP (x≤0.13) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1180-1183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The symmetry of Yb3+-related luminescent centers in InP and In1−xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220–1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357843
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  • 10
    Electronic Resource
    Electronic Resource
    Scanning tunneling optical spectroscopy of semiconductor quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2538-2539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling optical spectroscopy has been used to determine the optical properties of semiconductor quantum wells. With this technique, photoenhanced tunneling currents are measured with a scanning tunneling microscope on heterostructures illuminated with monochromatic light. For the InAsxP1−x/InP strained single quantum well structures, the 295 K spectra exhibit well-resolved transitions attributable to interband transitions involving the heavy-hole valence band and the n=1 conduction subband. The observed transition energies are in good agreement with values measured using photoconductivity and photoluminescence spectroscopy on the same samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104819
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