Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (13)
Source
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356283
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353935
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Anomalous mobility enhancement in heavily carbon-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355706
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355229
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Alfvén shock trains (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 1407-1419 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cohen–Kulsrud–Burgers equation (CKB) is used to consider the nonlinear evolution of resistive, quasiparallel Alfvén waves subject to a long-wavelength, plane-polarized, monochromatic instability. The instability saturates by nonlinear steepening, which proceeds until the periodic waveform develops an interior scale length comparable to the dissipation length; a fast or an intermediate shock then forms. The result is a periodic train of Alfvén shocks of one or the other type. For propagation strictly parallel to the magnetic field, there will be two shocks per instability wavelength. Numerical integration of the time-dependent CKB equation shows that an initial, small-amplitude growing wave asymptotes to a stable, periodic stationary wave whose analytic solution specifies how the type of shock embedded in the shock train, and the amplitude and speed of the shock train, depend on the strength and phase of the instability. Waveforms observed upstream of the Earth's bowshock and cometary shocks resemble those calculated here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859706
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structure and evolution of small-amplitude intermediate shock waves (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 253-269 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified set of equations is derived that approximates the magnetohydrodynamic (MHD) Navier–Stokes equations for weakly nonlinear disturbances whose speeds are close to the MHD intermediate speed. Its shock structure solutions are then examined. The fast and slow shock solutions are uniquely specified by their Rankine–Hugoniot relations. However, the intermediate shock solutions, which are not unique, are characterized by the integral through the shock of the noncoplanar component of the magnetic field. For situations in which this integral is conserved, the Riemann problem is well defined and predicts the evolution of intermediate shocks. This analysis is substantiated by numerical computations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859235
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The small amplitude magnetohydrodynamic Riemann problem (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 2877-2886 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The small amplitude magnetohydrodynamic Riemann problem is studied using the Cohen–Kulsrud–Burgers equations. Unlike the coplanar Riemann problem, the evolution of noncoplanar Riemann problems is not self-similar and its flow structures could change in time. But its large-time behavior is very simple and a time-dependent 2→3 intermediate shock is always involved for the noncoplanar field rotations. The time-dependent 2→3 intermediate shock has a well-defined structure and exists for any degree of field rotation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860675
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.51In0.49P/GaAs tunneling emitter bipolar transistors (TEBTs) grown by gas source molecular beam epitaxy with different barrier thicknesses (50 and 100 A(ring)) have been fabricated and measured at different temperatures (77 and 300 K) for the first time. A current gain of 141 and an offset voltage of 50 mV at room temperature were achieved in the thick barrier (100 A(ring)) device with heavily doped p+ (1×1019 cm−3) base. The thinner device had a lower gain (∼53) than the thick barrier device at room temperature. The functional dependence of gain on thickness was attributed to carrier tunneling through the barrier inserted between the base and the emitter. The low-temperature (77 K) results showed that the gain of the thick barrier device was almost the same as that at 300 K while that of the thin barrier device increased, which was explained by the nonequilibrium electron transport in the base.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107062
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Transverse mode emission characteristics of gain-guided surface emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2624-2626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110426
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Semi-insulating iron-doped indium phosphide grown by low-pressure metal-organic chemical vapour deposition (1993)
    Springer
    Journal of materials science 4 (1993), S. 62-66 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract (C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 Ev. For a wide range (10–600) of In/Fe molar fraction, the resistivity remained at high values (about 108 Ω cm) and the highest resistivity appeared at 5 × 108 Ω cm for a 1 Μm layer with a breakdown voltage of 9 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226636
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...