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  • 1
    Digitale Medien
    Digitale Medien
    Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353935
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  • 2
    Digitale Medien
    Digitale Medien
    In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355229
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  • 3
    Digitale Medien
    Digitale Medien
    Room temperature study of low temperature grown Al0.3Ga0.7As/GaAs multiple quantum wells by modulation reflectance (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8589-8593 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We studied the subband energy levels in AlGaAs/GaAs multiple quantum wells grown at different temperatures (200–600 °C) by using the piezoreflectance and photoreflectance in room temperature. Under subsequent 30 s rapid-thermal annealing at different temperatures (600–1000 °C), we observed a large energy blueshift in samples with growth temperature below 400 °C. This blueshift energy may be attributed to the modification of quantum wells caused by gallium vacancy enhanced Al–Ga interdiffusion. The energy blueshifts were analyzed by solving Fick's second law for Al diffusion in quantum wells, obtaining an effective activation energy of 0.75 eV. We discuss our results using the nonequilibrium diffusion equation and comparing them with other experiments. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373583
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  • 4
    Digitale Medien
    Digitale Medien
    Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356283
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  • 5
    Digitale Medien
    Digitale Medien
    Anomalous mobility enhancement in heavily carbon-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355706
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  • 6
    Digitale Medien
    Digitale Medien
    Ink-jet printing of doped polymers for organic light emitting devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 519-521 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120807
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  • 7
    Digitale Medien
    Digitale Medien
    Integrated three-color organic light-emitting devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3117-3119 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a demonstration of the integration of individual polymer-based light emitting devices of three different colors on the same substrate. Orange, green, and blue color devices are sequentially fabricated on the same indium–tin oxide (ITO) coated glass substrate coated with a patterned insulator on the ITO, by the spin coating of polymer thin films, the vacuum deposition of top metal contacts, and the patterning of polymer thin film by plasma etching, using the top metal contacts as the self-aligned etching mask. The devices exhibit no degradation of device characteristics due to the integration processing compared to discrete devices on separate substrates. This demonstration shows a new path towards the fabrication of high performance low-cost full-color organic flat panel displays. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116800
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  • 8
    Digitale Medien
    Digitale Medien
    Transverse mode emission characteristics of gain-guided surface emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2624-2626 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110426
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  • 9
    Digitale Medien
    Digitale Medien
    dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ga0.51In0.49P/GaAs tunneling emitter bipolar transistors (TEBTs) grown by gas source molecular beam epitaxy with different barrier thicknesses (50 and 100 A(ring)) have been fabricated and measured at different temperatures (77 and 300 K) for the first time. A current gain of 141 and an offset voltage of 50 mV at room temperature were achieved in the thick barrier (100 A(ring)) device with heavily doped p+ (1×1019 cm−3) base. The thinner device had a lower gain (∼53) than the thick barrier device at room temperature. The functional dependence of gain on thickness was attributed to carrier tunneling through the barrier inserted between the base and the emitter. The low-temperature (77 K) results showed that the gain of the thick barrier device was almost the same as that at 300 K while that of the thin barrier device increased, which was explained by the nonequilibrium electron transport in the base.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107062
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  • 10
    Digitale Medien
    Digitale Medien
    Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 653-655 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Results are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer of the conjugated conducting polymer poly(p-phenylene vinylene) (PPV), and a layer of fluorescent molecular compound tris(8-hydroxy) quinoline aluminum (Alq). The external quantum efficiency of these heterostructure LEDs is ∼0.1%, which is over one order of magnitude higher than that of simple PPV LEDs. The electroluminescence (EL) spectra indicate that both materials in the device emit comparable amounts of light. The dependence of the EL spectra on the layer thicknesses and its independence on bias suggest that neutral excitons are formed in the Alq, far from the PPV/Alq interface, and subsequently diffuse into the PPV layer. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114119
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