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  • 1990-1994  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    Use of aromatase metabolite ratios to characterize electron transfer from NADPH-cytochrome P450 reductase (1993)
    s.l. : American Chemical Society
    Biochemistry 32 (1993), S. 12007-12012 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00096a010
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Langmuir-Blodgett Film and Second Harmonic Generation of a Europium Hemicyanine Complex, Me2NC6H4CH:CHC5H4NC16H33+Eu(NTA)4- (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 1910-1912 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00018a049
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Langmuir-Blodgett Film and Second Harmonic Generation of C60(C4H8N2) (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 12459-12461 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100099a001
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    High current O+ ion source : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1325-1326 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high current O+ ion source is desirable for applications to SIMOX and materials modification. To meet the requirements of this field, a new type of nonfilament high current O+ ion source has been developed successfully in our institute. Using O2 as discharge material, the typical extraction characteristics are as follows: The total oxygen ions current is 100 mA, of which the content of O+ is 80%, beam current density is larger than 200 mA/cm2 when the power consumption is 100 W; therefore the economic property is 1 mA/W. Feeding N2, the total extraction beam current is 100 mA of which 70% is N+ while the power consumption is 135 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144999
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Damage accumulation during high-dose, O+ implantation in Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 896-898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose O+ implantation of Si between 450 and 500 keV is investigated to better understand the mechanisms responsible for ion-induced growth of damage, especially in the top Si layer ahead of the region where a buried oxide forms. Two distinct states are identified in this Si layer over an extended range of fluence (≥1018 cm−2): a low-density defect state and a high-density one. These states are observed at all irradiation temperatures, including ambient temperature. The transition between the states is rather abrupt with the onset at a high fluence, which decreases with decreasing temperature. The existence of the low-density state offers a possibility of forming dislocation-free silicon-on-insulator wafers, even for ambient temperature irradiations. A processing method for achieving such wafers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109894
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Strain relief mechanism for damage growth during high-dose, O+ implantation of Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-induced damage accumulation and growth during separation by implantation of oxygen (SIMOX) processing were studied. Silicon wafers were implanted with 450 keV oxygen ions at an elevated temperature with doses of 0.8×1018 and 1.1×1018 cm−2. At the lower dose, the silicon overlayer was found to be highly strained but free of dislocations, while a distinct band of dislocations was observed in the top Si layer at the higher dose. The occurrence of this band is shown to correlate with strain relief in the overlayer. Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and x-ray diffraction were used to characterize this damage so that its role in releasing the accumulated strain during ion implantation could be better understood. Additional insight was gained into the nature of the damage formed at the different doses by studying the thermal stability at 900 °C. Markedly different thermal behaviors were observed and are correlated to changes in the strain state of each sample. These results strongly suggest that dislocation formation in the Si overlayer during the SIMOX process is in response to strain accumulation in the lattice and that dislocation-free layers can be formed by appropriate intervention prior to the yield point. This mechanism for dislocation formation is thought to be generally operative under extreme irradiation conditions and, therefore, will be important to other ion-beam synthesis processes such as buried silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110103
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  • 7
    Electronic Resource
    Electronic Resource
    A simplified synthesis of transmission lines with a tree structure (1994)
    Springer
    Analog integrated circuits and signal processing 5 (1994), S. 19-30 
    Details
    ISSN: 1573-1979
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The limiting factor for high-performance systems is being set by interconnection delay rather than transistor switching speed. The advances in circuits speed and density are placing increasing demands on the performance of interconnections, for example chip-to-chip interconnection on multichip modules. To address this extremely important and timely research area, we analyze in this paper the circuit property of a generic distributedRLC tree which models interconnections in high-speed IC chips. The presented result can be used to calculate the waveform and delay in anRLC tree. The result on theRLC tree is then extended to the case of a tree consisting of transmission lines. Based on an analytical approach a two-pole circuit approximation is presented to provide a closed form solution. The approximation reveals the relationship between circuit performance and the design parameters which is essential to IC layout designs. A simplified formula is derived to evaluate the performance of VLSI layout.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01673903
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    The icosahedral to crystalline transformation in Al51Cu12.5Li16.5Mg20 melt-spun ribbons (1993)
    Springer
    Journal of materials science 28 (1993), S. 3731-3740 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The results of experiments on the icosahedral to crystalline transformation of melt-spun Al51Cu12.5Li16.5Mg20 are reported. The microstructural characteristics of the alloy, in all stages of the transformation, have been determined using a combination of transmission electron microscopy, X-ray diffraction and differential scanning calorimetry. The as-spun alloy consists of icosahedral grains with a low volume fraction of quenched-in crystallites. The quasilattice constant is calculated to be 0.505 nm. Upon annealing at 394 °C for 20 min, the icosahedral phase completely transforms to Al5Cu(Li, Mg)3 (a b c c phase), aluminium and a hexagonal phase. The orientation relationships and chemical compositions of all phases involved are established. Electron microscopy reveals planar defects in all the crystalline phases (except aluminium). The planar defects in the b c c phase are on {1 1 0} and {1 0 0}-type planes. Defects in the hexagonal phase are found to be on {0001} and {11 ¯20}-type planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00353171
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Signature of twin planes in Mössbauer spectroscopy of cuprate superconductors (1990)
    Springer
    Hyperfine interactions 62 (1990), S. 73-88 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract One of the four quadrupole doublets (A, B, C, and D) observed in Mössbauer spectra of orthorhombic (Y or RE)1Ba2(Cu1-xFex)307-δ(δ≈0) samples is identified with Fe dopant replacing a Cu site in twin planes. The site in question, labelled as D, is characterized by a quadrupole splitting ΔD in the range 1.6±0.1 mm/s. The D-site intensity is found to approach zero when the 1-2-3, material is driven tetragonal, either upon oxygen desorption, upon oxygen loading, or upon increasing the Fe-dopant concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02407664
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    A numerical method for introducing an arbitrary yield function into rigid-viscoplastic FEM programs (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 37 (1994), S. 3467-3487 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: Many standard yield functions (Hill, von Mises, etc,…) allow the derivation of simple equations relating the effective strain rate to principal strain rates explicitly. Such yield functions are easily implemented in rigid-viscoplastic finite element method programs. Other yield functions (Hosford, e.g.) do not allow for this simple approach. A numerical method was proposed in this paper to solve this problem which meets the requirement of rigid-viscoplastic finite elements and can generate the material stiffness terms (first and second derivatives of the effective strain rate with respect to principal strain rates) at any strain state. The numerical method was found to be numerically efficient, accurate and robust. As an example of the procedure, Hosford's yield function was introduced in a rigid-viscoplastic finite element program and results for the punch stretching simulation were compared with Hill-type materials. The numerical efficiency of the method was also compared. Simulation of full dome formability test, plane strain and square punch stretching was performed by this numerical method with Hosford's yield function.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620372005
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