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  • 2005-2009  (1)
  • 2000-2004  (31)
  • 1985-1989  (84)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 303-307 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory magnetoresistance (Shubnikov–de Haas) measurements have been used to determine free-carrier effective masses in HgTe-CdTe superlattices. Measurements on an n-type superlattice yield an electron mass that is in excellent agreement with theoretical results from a tight-binding band-structure calculation. The p-type data are more complex, showing evidence for a light-hole mass at low magnetic fields and a much heavier mass at fields above 2.0 T. This finding is also in agreement with the predictions of band-structure theory.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 843-851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel, active, mode-locking scheme for producing single, line-tunable, high-power ultrashort CO2-laser pulses is described. Using an auxiliary grating-tuned cw CO2 laser for injection locking on the 9R(16) line, the Q-switched, mode-locked, and cavity-dumped 10-atm CO2 laser produces single, detection-limited (〈500 ps) pulses of 5-mJ energy at λ=9.29 μm. Details are given on the traveling-wave GaAs Pockels cells, both of which are controlled by a single, ultraviolet (UV) triggered spark gap. The time-locked output pulse is delayed by precisely 300.7 ns with 〈±50 ps jitter against the UV triggered spark gap, so the laser pulse is synchronizable to an external event to 〈±250 ps. To drive the transverse-electric (TE) 10-atm amplifier section, instead of the conventional Marx bank or inductance-capacitance (LC) generator, a new type of circuit is used. The automatically preionized, double-sided LC inversion circuit uses only one spark gap, and a detailed description with operating characteristics is provided.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1557-1559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed description of the kinematics governing a nuclear reaction analysis is presented for exothermic reactions. In particular, the peculiar behavior demonstrated when the emitted particle energy decreases with increasing bombarding energy is emphasized. The method is applied to 16O(d,p)17O and D(d,p)T reactions from SiO2 and D2O targets, respectively. Moreover, an algorithm was written to compute reaction cross sections as a function of energy or concentration as a function of depth from the measured reaction yields.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1047-1054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive photo-Hall investigation of compensation densities in n-type Hg1−xCdxTe (0.224〈x〈0.235) is reported. The technique consists of measuring the low-temperature electron mobility as a function of optically excited carrier density. Pulses of 25-μs duration from a CO2 laser yield excess electron-hole plasma densities of between 1013 and 1016 cm−3. At low excitation levels the mobility increases due to the neutralization of ionized acceptors by photoexcited holes, while at higher excitation levels the mobility slowly decreases due to electron-hole scattering. By comparing to a detailed theory for electron transport in photoexcited narrow-gap semiconductors, the density of compensating acceptors NA can be accurately determined. The theory is generalized to account for multi-ion scattering, carrier heating, surface conduction, and inhomogeneous excitation. Experimental refinements significantly extending the range of narrow-gap n-type samples for which compensation densities may be determined are discussed. The present study demonstrates the broad applicability of the technique by determining NA for samples with compensation ratios between 0.09 and 0.96 and with both single and double acceptors.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4892-4896 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the design and operation of an optimized version of a Q-switched, mode-locked, and cavity-dumped ruby-laser oscillator. The modulator window is much narrower than that assumed in conventional active mode-lock theory, and is shown to yield much shorter pulses than the latter in cases where the number of round trips is restricted. To allow a high-power pulse (≈1 GW) to evolve in the oscillator, and to allow simple synchronization to a (∼100 ns fixed delay) CO2 laser, a limit of 23 round trips was chosen, but similar limits may be imposed by lasers having short-gain duration as in an excimer laser. Details are given on the single spark gap switching element and Pockels cells, with an analysis of their expected switching speeds, in order to establish the effectiveness of the modulator, as compared to conventional sinusoidally driven active mode lockers. Single pulses of 50–70 mJ are reliably cavity-dumped after only 100-ns delay (23 round trips) with pulse length adjustable from 50–100 ps with ±5-ps stability. Relative timing between the main (CO2) and probe (ruby) pulses allows a measurement accuracy of ±50 ps to be attained.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4638-4644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A more rigorous numerical method for determining bulk semiconductor transport properties from photo-Hall data is presented and is used to determine compensation densities in narrow-gap HgCdTe. Previous studies have treated carrier density inhomogeneities by means of a two-layer approach, assuming a photoexcitation layer of constant thickness associated with either the absorption depth or the ambipolar diffusion length. Here, we show that this approximation can lead to significant error. For arbitrary optical intensities a more detailed integration over depth is required, properly accounting for the variation in the optical and transport of the material with carrier density and optical intensity. In the present technique, the spatial profile of the carrier density, n(z), is calculated as a function of optical intensity Φ0. The electron mobility μ is expanded in known functions of the carrier density. By using this n(Φ0,z) and μ(n), integral expressions for the net conductivity and Hall coefficient are then evaluated. The unknown coefficients in the mobility expansion are varied parametrically to obtain the best fits to the measured Hall coefficient and conductivity as a function of optical flux. From this fit, the electron mobility is determined as a function of carrier density. Detailed sample calculations are performed for the case of narrow-gap, n-type Hg1−xCdxTe at low temperatures assuming 10.6 μm CO2 laser excitation. Analysis of the photo-Hall data using the improved method leads to a reliable determination of compensation densities in this material.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 1 (1989), S. 650-653 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The angular and spectral distribution of (3/2)ω0 light emitted from a CO2-laser-irradiated underdense plasma has been measured. The results are interpreted with the help of Thomson scattering measurements of two-plasmon decay plasma wave k spectra and theoretical predictions based on the process in which pump photons are scattered off two-plasmon decay plasmons. If pump, (3/2)ω0-photon, and decay plasmon satisfy their wave vector matching condition, then the spectra provide good temperature diagnostics. Spectra of light scattered off plasmons having propagated up or down the density gradient are severely broadened.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 3451-3455 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated Raman scattering (SRS) in a CO2 laser(λ0=10.6 μm) produced plasma has been studied experimentally. The enhanced electron plasma wave (epw) fluctuations observed with ruby laser Thomson scattering have been compared with the scattered infrared (IR) spectra and the high-energy (near 100 keV) electrons. No scattered IR light in the range 1.5λ0 〈λ〈2λ0 was observed although the epw fluctuations suggested there should be IR light in this range. A signal was detected at 2λ0 which is due to the two plasmon decay instability. The number and energy spectra of the fast electrons are well correlated with the Thomson scattered wave vector spectra.
    Type of Medium: Electronic Resource
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