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  • 2000-2004  (4)
  • 1985-1989  (1)
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Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    Photon energy conversion and storage with a light-driven insertion reaction (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4597-4605 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Experiments are presented that demonstrate the possibility of photon energy conversion with a photoelectrochemical insertion reaction. The reaction is performed with the Cu+-conducting semiconductor copper thiophosphate (Cu3PS4; band-gap energy, Eg=2.3 eV) as the photocathode. The Cu3PS4 crystals were grown by chemical vapor transport with halogen as the transport agent. The thermodynamics of the photoinsertion reaction of copper into Cu3PS4 electrodes was investigated, determining a composition-voltage diagram in the dark and under illumination. In photoelectrochemical cells the kinetics of the photoinsertion reaction was studied. Energy-converting photoinsertion cells could be realized with suitable counterelectrodes. The principles of energy-storing photoinsertion cells are discussed together with efficiency limitations and electrode arrangements that may overcome these difficulties.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339056
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  • 2
    Digitale Medien
    Digitale Medien
    Defect formation in a two-layer Al/Ni crystal bombarded with ions having energies close to the sputtering threshold (2000)
    Springer
    Technical physics letters 26 (2000), S. 429-431 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Atomic collision cascades developed in an Al/Ni system, comprising a monolayer of Al atoms on the Ni(100) single crystal face bombarded at normal incidence by 25-or 50-eV Ar and Xe atoms, were simulated by means of molecular dynamics. It is shown that the number of Al atoms relocated within the first layer of the Al/Ni crystal markedly exceeds the number of analogous relocations in a nickel single crystal, which is explained by differences in the number of vacancies in the first layer of two systems, and in the lattice constants of Al and Ni.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262869
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  • 3
    Digitale Medien
    Digitale Medien
    Atomic relocations in a two-layer Al/Ni system bombarded with ions having energies close to the sputtering threshold (2000)
    Springer
    Technical physics letters 26 (2000), S. 372-374 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Collision cascades developed at 300 K in a Ni single crystal and in a system comprising a monolayer of Al atoms on the Ni(100) single crystal face bombarded at normal incidence by 25-and 50-eV Ar and Xe atoms were simulated by method of molecular dynamics. It was found that the number of atoms relocated through the Al-Ni interface markedly exceeds the number of analogous relocations in the nickel single crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262847
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  • 4
    Digitale Medien
    Digitale Medien
    On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions (2000)
    Springer
    Technical physics letters 26 (2000), S. 455-457 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The mechanisms of formation of vacancies and radiation-induced adsorbed and interstitial atoms in the cascades of atomic collisions induced by 25-, 40-and 50-eV Ar and Xe ions normally incident onto the Al(100) surface at 300 K are discussed within the framework of the molecular dynamics approach. The numbers of bulk and surface vacancies formed in the course of a collision cascade exhibit two maxima in the case of Xe ions and a single maximum in the case of Ar ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262875
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  • 5
    Digitale Medien
    Digitale Medien
    Modeling of Atomic Displacements in the Bombardment of Copper by Ar and Xe Ions with Near-Sputtering-Threshold Energies (2000)
    Springer
    Russian physics journal 43 (2000), S. 860-866 
    Details
    ISSN: 1573-9228
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Using the molecular dynamics method, collision-induced cascades are modeled, which are generated in the normal bombardment of a copper crystal (100) by Ar and Xe ions with energies 25, 40, and 50 eV as well as by Xe ions at 15 eV and crystal temperature 300 K. Time dependences are derived for the formation of vacancies and interstitial atoms as a function of depth of the crystal and radiation-adsorption atoms (adatoms) on its surface during the cascade development. The adatoms are shown to contribute considerably to the change in r.m.s. atomic displacement in the thermal stage of the cascade. It is proved that Ar ions produce more adatoms on the surface vacancies while Xe ions do so in the bulk of the crystal below the first atomic layer and exhibit more effective mixing in the [100] direction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009493002699
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