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  • 1
    Electronic Resource
    Electronic Resource
    Chromosome numbers, genome sizes, cell volumes and evolution of snake-head fish (family Channidae) (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 33 (1988), S. 0 
    Details
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Chromosome number, C-value and cell volume studies were carried out on three species of the genus Channa, viz., C. punctatus, C. striatus and C. gachua. The chromosome number, karyotypic structure and DNA content per cell along with cell volume are reported and described. A series of chromosomal rearrangements are established in three different karyotypes along with polyploidy. Both pericentric inversion and Robertsonian fusion played a major role in chromosome rearrangements. The nuclear DNA content of these three species is within 19-29% of the present-day placental mammals, and is thus lower than the median amount for fishes in general and teleosts in particular. Their lower DNA content suggests that the three species of the family Channidae are highly specialized, and this is supported by their known morphologic, reproductive, behavioural and ecological characteristics.The evolutionary significance of these chromosomal rearrangements, their origin and their mode of establishment are discussed. A probable phylogenetic model based on karyotype, C-value and chromosomal rearrangements of the genus is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1095-8649.1988.tb05523.x
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of Au in amorphous Zr x Ni100−x alloys studied by Rutherford Backscattering Spectrometry (1990)
    Springer
    Applied physics 50 (1990), S. 365-368 
    Details
    ISSN: 1432-0630
    Keywords: 66.30h ; 62.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion coefficients (D) of Au in three binary amorphous Zr x Ni100−x (x=61, 65, and 67) alloys were measured in the temperature range 549–623 K using the technique of the Rutherford Backscattering Spectrometry (RBS). The D values were found to lie in the range 1.0×10−21–9.0×10−20 m2s−1 for different alloys. The activation energy (Q) was calculated in each case on the basis of an observed Arrhenius temperature dependence of D. The activation energy was found to scale with the crystallization temperature (T x) of the alloy. Other published measurements for Au diffusion in amorphous Zr-Ni alloys also appear to follow the scaling relation between Q and T x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323592
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation-Induced Order-Disorder Transformations (1985)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 3 (Jan. 1985), p. 335-352 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.3.335.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    On Clustering and Ordering Instabilities in FCC Solid Solutions (1985)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 3 (Jan. 1985), p. 111-121 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.3.111.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Depletion of singlet and triplet states of 1-amino-5, 6, 7, 8-tetrahydronaphthalene due to external heavy-atom perturbation (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 8 (1986), S. 541-552 
    Details
    ISSN: 0392-6737
    Keywords: Photochemistry and radiation chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si riporta lo spegnimento di luminescenza dell' l-amino-5, 6, 7, 8-tetraidronaftalene (ATHN) in solventi non polari e polari a 300 K e 77 K mediante i cloroalcani tetracloruro di metilene (CH2Cl2). Si determinano diversi parametri fotofisici a 77 K di ATHN fluorescente perturbato e non perturbato in soluzioni ternarie. La constante (K q) del valore di smorzamento di fluorescenza dinamico bimolecolare aumenta con l'affinità elettronica (EA) degli spegnitori ed esiste una correlazione lineare tra lnK q ed EA. Lo spegnimento dipende dalla polarità dei solventi. Lo spegnimento è attribuito all'exciplex CT di contatto formato tra cloroalcani e ATHN a singoletti eccitati.
    Notes: Summary Quenching of luminescence of 1-amino-5, 6, 7, 8-tetrahydronaphthalene (ATHN) in nonpolar and polar solvents at 300 K and 77 K by the chloroalkanes carbon tetrachloride (CCl4), methyl chloroform (CH3CCl3), chloroform (CHCl3) and methylene chloride (CH2Cl2) is reported. Different photophysical parameters at 77 K of unperturbed and perturbed fluorescer ATHN in ternary solutions are determined. The bimolecular dynamic fluorescence quenching rate constant (K q) increases with the electron affinity (EA) of the quenchers and a linear correlation exists between lnK q and EA. The quenching depends on polarity of solvents. The quenching is ascribed to contact CT exciplex formed between chloroalkanes and excited singlet ATHN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450616
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  • 6
    Electronic Resource
    Electronic Resource
    Identification of a Novel Esterase in Human Breast Cyst Fluid (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 586 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb17808.x
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  • 7
    Electronic Resource
    Electronic Resource
    Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1885-1887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature silicon epitaxy is critical for future generation ultralarge scale integrated circuits and silicon-based heterostructures. Remote plasma-enhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150 °C, which is believed to be the lowest temperature reported to date. Critical to the process are an in situ remote plasma hydrogen cleaning of the substrate surface in an ultrahigh vacuum growth chamber prior to epitaxy, and substitution of thermal energy by remote plasma excitation via argon metastables and energetic electrons to dissociate silane and increase adatom mobility on the surface of the silicon substrate. Excellent crystallinity with very few defects such as dislocations and stacking faults is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102161
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth conditions and kinetics in low-temperature ArF excimer laser photochemical-vapor deposition from disilane (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial Si films were deposited using an ArF excimer laser beam parallel to the substrate to photodissociate Si2H6 at low temperatures (250–350 °C) under laser intensity and Si2H6 partial pressure conditions that result in low initial photofragment concentrations (〈 1013 cm−3). Total pressure and flow conditions were chosen such that there is little secondary photolysis of the initial photofragments. The deposition yield of solid Si from photoexcited Si2H6 is estimated to be 0.20±0.04, indicating that in order for film growth to result solely from the primary products in ArF laser (193 nm) photolysis of Si2H6, a sticking coefficient ≥0.6 must be assigned to the dominant growth precursor. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1–15 mJ/cm2 pulse and 5–40 mTorr, respectively. Increasing the distance between the laser-beam axis and the silicon substrate results in a reduction of the growth rate that can be explained by gas-phase chemical reaction of the growth precursors as they diffuse to the substrate. Epitaxy is maintained for temperatures above the threshold for thermal decomposition of surface (SiH2)n chains at ∼250 °C, and for temperatures below the onset of Si2H6 pyrolysis and rapid thermal desorption of surface H2 at ∼350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351791
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  • 9
    Electronic Resource
    Electronic Resource
    Superconductivity in rapidly quenched metallic systems with nanoscale structure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2934-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocomposites of Al-In, Al-Pb, and Zn-Pb have been prepared and characterized using rapid quenching techniques and the nature of superconducting transitions in them has been studied by resistivity measurements. The precipitated second phases (In and Pb) have particle sizes (d) of a few tens of nanometers such that ξ0≥d≥dmin, where ξ0 is the superconducting zero temperature coherence length and dmin is the minimum particle size that supports superconductivity. The onset of superconductivity generally starts in samples with d∼ξ0 and progressively other grains with d≤ξ0 become superconducting. We suggest that the proximity effect of the matrix plays a significant role. In an Al-In system, even with 40 wt.% In, the zero resistivity state is obtained at T∼1.33 times the Tc of Al. But in Al-Pb and Zn-Pb, the zero resistivity state is obtained at T∼4 and 5 times the Tc of Al and Zn with only 10–15 wt % Pb, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353024
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  • 10
    Electronic Resource
    Electronic Resource
    Discontinuity of B-diffusion profiles at the interface of polycrystalline Si and single crystal Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3800-3804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion in polycrystalline Si-on-single crystal Si systems has been studied by secondary ion mass spectrometry. The extrapolated B-diffusion profiles in polycrystalline Si and in the single crystal Si substrate reveal a discontinuity at the polycrystalline Si-single crystal Si interface. The discontinuity in the B profiles is believed to occur due to the blockage of B-defect complexes by the interfacial oxide between polycrystalline Si and the single-crystal Si substrate, as well as the immobility of these defect complexes in single crystal Si. The B in the implant peak region above the B solid solubility limit is found to be immobile in single crystal Si during annealing due to the formation of electrically inactive B-defect complexes. In polycrystalline Si, however, our results show that the B in the peak region spreads out more rapidly than in single crystal Si possibly due to the diffusion of B-defect complexes along grain boundaries. The B-defect complexes are electrically inactive as determined by spreading resistance analysis. If the B concentration is lowered below the solid solubility limit, either by decreasing the dose or by raising the anneal temperature, no discontinuity is observed in the B profile across the polycrystalline Si-single crystal Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352886
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