Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 755-756
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This letter presents electrical characteristics of thin (110 A(ring)) metal-oxide-semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized-nitrided CVD dielectrics exhibit lower rates of interface-state generation and electron trapping under electrical stress, as compared to as-deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized-nitrided CVD films may be promising candidates for thin dielectrics applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102443
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