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Digitale Medien

Electrical characteristics of reoxidized-nitrided chemical vapor deposited oxides (1989)

Hwang, H. ; Ting, W. ; Kwong, D. L. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 755-756

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: This letter presents electrical characteristics of thin (110 A(ring)) metal-oxide-semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized-nitrided CVD dielectrics exhibit lower rates of interface-state generation and electron trapping under electrical stress, as compared to as-deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized-nitrided CVD films may be promising candidates for thin dielectrics applications.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.102443

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