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  • 1985-1989  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Elimination of secondary defects in As-implanted Si by high concentration oxygen atoms (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1210-1212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic precipitate-induced dislocation loops generated at the projected range Rp of As in high-dose As-implanted, annealed (100) Si are eliminated, if oxygen-atom concentrations at the Rp region are high, i.e., above about 1×1020 atoms/cm3 . This is confirmed by the following two experiments: 80 keV, 2×1016 As+/cm2, 18-nm-thick through-oxide implantation together with subsequent annealing and a double implantation of 80 keV, 2×1016 As+ /cm2 and 22 keV, 5×1015 O+ /cm2 , followed by an annealing sequence. Experimental results suggest that the bonding of several As atoms with one oxygen atom suppresses As clustering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99160
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Three-dimensional solid-phase-epitaxial regrowth from As+-implanted Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2238-2242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase-epitaxial (SPE) regrowth from selectively As+-implanted amorphous Si is analyzed by cross-sectional transmission electron microscopy. SPE regrowth in the (100) wafers proceeds into both vertical and lateral directions simultaneously. For (111) samples, SPE regrowth in the diagonal direction, i.e., 〈100〉 direction near the mask edge, is dominant. In addition to the end of range defects and projected range defects, in the SPE process, defects of a third type are generated just beneath the implantation mask edge. Differences in mask material which control the applied stress at the mask edge have little influence on edge defect generation. Substrate orientation and mask pattern direction play important roles in the edge defect formation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342835
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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